Power MOSFET ME20P03 P Channel Logic Enhancement Mode with High Cell Density DMOS Trench Technology
Key Attributes
Model Number:
ME20P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
27.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
42mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 P-Channel
Input Capacitance(Ciss):
804pF
Output Capacitance(Coss):
123pF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
-
Mfr. Part #:
ME20P03
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The ME20P03 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits where low power loss in a small surface-mount package is required. Key features include exceptionally low RDS(ON) and high DC current capability.
Product Attributes
- Brand: Not explicitly stated, but implied by model number ME20P03/ME20P03-G.
- Origin: Not explicitly stated.
- Material: Not explicitly stated.
- Color: Not explicitly stated.
- Certifications: Pb-free (ME20P03), Green product-Halogen free (ME20P03-G).
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
| Maximum Ratings | VDS | -30 | V | Drain-Source Voltage |
| VGS | ±20 | V | Gate-Source Voltage | |
| ID (TC=25) | -27.6 | A | Continuous Drain Current | |
| ID (TC=70) | -25.5 | A | Continuous Drain Current | |
| IDM | -110 | A | Pulsed Drain Current | |
| PD (TC=25) | 39 | W | Maximum Power Dissipation | |
| Thermal Characteristics | TJ | -55 to 150 | Operating Junction Temperature | |
| RJC | 3.2 | /W | Thermal Resistance-Junction to Case* | |
| Electrical Characteristics (TC=25 Unless Otherwise Specified) | V(BR)DSS | -30 | V | Drain-Source Breakdown Voltage (VGS=0V, ID=-250A) |
| VGS(th) | -1 to -3 | V | Gate Threshold Voltage (VDS=VGS, ID=-250A) | |
| IGSS | ±100 | nA | Gate Leakage Current (VDS=0V, VGS=±20V) | |
| IDSS | -1 | μA | Zero Gate Voltage Drain Current (VDS=-24V, VGS=0V) | |
| RDS(ON) | 27 / 32 | mΩ | Drain-Source On-State Resistance (VGS=-10V, ID=-18A) | |
| RDS(ON) | 35 / 42 | mΩ | Drain-Source On-State Resistance (VGS=-4.5V, ID=-10A) | |
| VSD | -0.7 / -1.2 | V | Diode Forward Voltage (IS=-1A, VGS=0V) | |
| Dynamic Characteristics | Qg | 21 | nC | Total Gate Charge (VDS=-15V, VGS=-4.5V, ID=-18A) |
| Ciss | 804 | pF | Input capacitance (VDS=-15V, VGS=0V, F=1MHz) | |
| Coss | 123 | pF | Output Capacitance (VDS=-15V, VGS=0V, F=1MHz) | |
| Crss | 40 | pF | Reverse Transfer Capacitance (VDS=-15V, VGS=0V, F=1MHz) | |
| td(on) | 37 | ns | Turn-On Delay Time (VDS=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=3Ω) | |
| Switching Characteristics | tr | 19 | ns | Turn-On Rise Time |
| td(off) | 54 | ns | Turn-Off Delay Time | |
| tf | 7 | ns | Turn-Off Fall Time |
2410121656_MATSUKI-ME20P03_C165226.pdf
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