Energy MOSFET LRC LP137N3T5G with super high density cell design and gate to source ESD protection
Key Attributes
Model Number:
LP137N3T5G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.6A
RDS(on):
890mΩ@1.8V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
54pF@16V
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
1.4nC@4.5V
Mfr. Part #:
LP137N3T5G
Package:
SOT-883-3
Product Description
Product Overview
The LP137N3T5G is a 20V P-Channel Enhancement MOSFET featuring a super high density cell design for extremely low RDS(ON) and fast switching capabilities. This device is ESD protected at the Gate to Source and complies with RoHS requirements and is Halogen Free. It is ideal for power management in notebooks, portable equipment, and battery-powered systems.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Gate Protection: Gate to Source ESD Protected
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C) | ||||
| Drain-to-Source Voltage | VDSS | -20 | V | |
| Gate-to-Source Voltage | VGS | ±8 | V | |
| Maximum Power Dissipation | PD | 0.4 | W | Continuous TA = 25°C |
| Drain Current | ID | -0.9 | A | Continuous TA = 25°C |
| Drain Current (Pulsed) | IDM | -3.6 | A | Note 2 |
| Operating Junction and Storage Temperature Range | TJ/Tstg | -55~+150 | °C | |
| THERMAL CHARACTERISTICS | ||||
| Junction-to-Ambient (Steady State) | RθJA | 305 | °C/W | Note 1 |
| ELECTRICAL CHARACTERISTICS (Ta= 25ºC) | ||||
| Static Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS = 0V, ID =-250µA |
| Gate Threshold Voltage | VGS(th) | -0.4 to -1 | V | VDS =VGS , ID =-250µA |
| Gate Body Leakage Current | IGSS | ±10 | µA | VDS =0V, VGS =±8V |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS =-20V, VGS =0V |
| Drain-Source On-State Resistance | RDS(ON) | 890 | mΩ | VGS=-4.5V, ID=-0.2A |
| 420 | mΩ | VGS=-2.5V, ID=-0.2A | ||
| 310 | mΩ | VGS=-1.8V, ID=-0.2A | ||
| Diode Forward Voltage | VSD | -1.5 | V | IS = -1.0A, VGS = 0V |
| Dynamic Characteristic (VDS =-16V, VGS =-4.5V, ID =-200mA) | ||||
| Total Gate Charge | Qg | 280 | nC | |
| Gate-Source Charge | Qgs | 66 | nC | |
| Gate-Drain Charge | Qgd | 26 | nC | |
| Turn-On Delay Time | td(on) | 82 | ns | |
| Rise Time | tr | - | ns | |
| Turn-Off Delay Time | td(off) | - | ns | |
| Fall Time | tf | - | ns | |
| Input Capacitance | Ciss | 540 | pF | (VDD =-10V, RL =50Ω,VGEN =-5V,RG =10Ω,ID =-200mA) |
| Output Capacitance | Coss | 9.7 | pF | f = 1 MHz |
| Reverse Transfer Capacitance | Crss | 5.5 | pF | |
| Gate-Resistance | Rg | 1402 | Ω | (VDS = 0 V, VGS = 0 V,f =1MHz) |
| Reverse Recovery Charge | Qrr | 75 | nC | (IS=-0.8A,dIf/dt=15A/us) |
| Reverse Recovery Time | trr | 280 | ns | (IS=-0.8A,dIf/dt=15A/us) |
| Device Marking and Ordering Information | ||||
| Model | LP137N3T5G | 20V P-Channel Enhancement MOSFET | ||
| Marking | LP137N3T5G | |||
| Shipping | 10000/Tape&Reel | |||
2410010101_LRC-LP137N3T5G_C2936675.pdf
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