Pb Free SOT 723 Package N Channel MOSFET LRC L2N7002M3T5G for Automotive and Industrial Applications

Name: Pb Free SOT 723 Package N Channel MOSFET LRC L2N7002M3T5G for Automotive and Industrial Applications
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: L2N7002M3T5G
Availability: InStock

Key Attributes

Model Number: L2N7002M3T5G

Product Custom Attributes

Drain To Source Voltage:

60V

Current - Continuous Drain(Id):

115mA

Operating Temperature -:

-55℃~+150℃

RDS(on):

4Ω@10V,500mA

Gate Threshold Voltage (Vgs(th)):

2.2V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

5pF

Number:

1 N-channel

Output Capacitance(Coss):

25pF

Input Capacitance(Ciss):

50pF

Pd - Power Dissipation:

150mW

Gate Charge(Qg):

Mfr. Part #:

L2N7002M3T5G

Package:

SOT-723

Product Description

Product Overview

The L2N7002M3T5G and S-L2N7002M3T5G are N-Channel Small Signal MOSFETs from LESHAN RADIO COMPANY, LTD., designed for various applications. These devices are available in a Pb-Free SOT-723 package, with the S- prefix indicating suitability for automotive and other applications requiring unique site and control change requirements, including AEC-Q101 qualification and PPAP capability. They offer reliable performance with specific voltage and current ratings, making them suitable for general-purpose switching and amplification.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Package Type: SOT-723
Channel Type: N-Channel
Lead Free: Yes
Certifications: AEC-Q101 Qualified (S- prefix models)
Compliance: PPAP Capable (S- prefix models)

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit
DrainSource Voltage	VDSS			60	Vdc
DrainGate Voltage (RGS = 1.0 M)	VDGR			60	Vdc
GateSource Voltage Continuous	VGS			20	Vdc
Drain Current Continuous (TC = 25C)	ID			115	mAmps
Drain Current Pulse	IDM			800	mAmps
Total Device Dissipation (FR5 Board, TA = 25C)	PD			150	mW
Derate above 25C				1.2	mW/C
Thermal Resistance, Junction to Ambient	RJA			833	C/W
Junction and Storage Temperature	TJ, Tstg	-55		+150	C
DrainSource Breakdown Voltage (VGS = 0, ID = 10 Adc)	V(BR)DSS	60			Vdc
Zero Gate Voltage Drain Current (TJ = 25C, VGS = 0, VDS = 60 Vdc)	IDSS			1.0	Adc
Zero Gate Voltage Drain Current (TJ = 125C, VGS = 0, VDS = 60 Vdc)	IDSS			500	Adc
GateBody Leakage Current, Forward (VGS = 20 Vdc)	IGSSF			100	nAdc
GateBody Leakage Current, Reverse (VGS = 20 Vdc)	IGSSR			-100	nAdc
Gate Threshold Voltage (VDS = VGS, ID = 250 Adc)	VGS(th)	1.0	1.8	2.2	Vdc
OnState Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc)	ID(on)	500			mA
Static DrainSource OnState Voltage (VGS = 10 Vdc, ID = 500 mAdc)	VDS(on)			0.375	Vdc
Static DrainSource OnState Voltage (VGS = 5.0 Vdc, ID = 50 mAdc)	VDS(on)			3.75	Vdc
Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mAdc)	rDS(on)			4	Ohms
Static DrainSource OnState Resistance (VGS = 5.0 Vdc, ID = 50 mAdc)	rDS(on)			4	Ohms
Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mAdc)	gFS	80			mmhos
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)	Ciss		17	50	pF
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)	Coss		10	25	pF
Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)	Crss		2.5	5.0	pF
TurnOn Delay Time (V DD = 25 Vdc , ID = 500 mAdc)	td(on)		7	20	ns
TurnOff Delay Time (V RG = 25 , RL = 50 , Vgen = 10 V)	td(off)		11	40	ns
Diode Forward OnVoltage (IS = 115 mAdc, V GS = 0 V)	VSD			-1.5	Vdc
Source Current Continuous (Body Diode)	IS			-115	mAdc
Source Current Pulsed (Body Diode)	ISM			-800	mAdc

Note 1: The Power Dissipation of the package may result in a lower continuous drain current.

Note 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

Note 3: FR5 Board = 1.0 x 0.75 x 0.062 in.

Note 4: Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

SOT-723 Package Dimensions

Dimension	MILLIMETERS			INCHES
Dimension	MIN	NOM	MAX	MIN	NOM	MAX
A	0.45	0.50	0.55	0.018	0.020	0.022
b	0.15	0.20	0.27	0.0059	0.0079	0.0106
b1	0.25	0.3	0.35	0.010	0.012	0.014
C	0.07	0.12	0.17	0.0028	0.0047	0.0067
D	1.15	1.20	1.25	0.045	0.047	0.049
E	0.75	0.80	0.85	0.030	0.032	0.034
e	0.40 BSC			0.016 BSC
H	1.15	1.20	1.25	0.045	0.047	0.049
L	0.15	0.20	0.25	0.0059	0.0079	0.0098

NOTES:

1. Dimensioning and Tolerancing per ANSI Y14.5M, 1982.
2. Controlling Dimension: Millimeters.
3. Maximum lead thickness includes lead finish. Minimum lead thickness is the minimum thickness of base material.
4. Dimensions D and E do not include mold flash, protrusions or gate burrs.

1806142033_LRC-L2N7002M3T5G_C172394.pdf

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