Power MOSFET MATSUKI ME95N03-G Featuring Low RDS ON and High Continuous Drain Current for Electronics
Key Attributes
Model Number:
ME95N03-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
2.6mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
304pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
6.217nF@15V
Pd - Power Dissipation:
54.4W
Gate Charge(Qg):
68nC@4.5V
Mfr. Part #:
ME95N03-G
Package:
TO-252-2
Product Description
Product Overview
The ME95N03 is an N-Channel logic enhancement mode power field effect transistor utilizing high cell density DMOS trench technology. This advanced technology minimizes on-state resistance, making the device ideal for low-voltage applications such as LCD inverters, computer power management, and DC to DC converter circuits requiring low in-line power loss. Key features include exceptionally low RDS(ON) and high DC current capability.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Product Series: ME95N03/ME95N03-G
- Certifications: Pb-free (ME95N03), Green product-Halogen free (ME95N03-G)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | Drain-Source Voltage | 30 | V | |||
| Gate-Source Voltage | ±20 | V | ||||
| Continuous Drain Current* TC=25 | ID | 100 | A | |||
| Continuous Drain Current* TC=70 | ID | 80 | A | |||
| Pulsed Drain Current | IDM | 400 | A | |||
| Maximum Power Dissipation TC=25 | PD | 54.4 | W | |||
| Maximum Power Dissipation TC=70 | PD | 34.8 | W | |||
| Electrical Characteristics | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | V | ||
| Gate Threshold Voltage | VDS=VGS, ID=250A | 1 | 3 | V | ||
| Gate Leakage Current | VDS=0V, VGS=20V | ±100 | nA | |||
| Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | 1 | A | |||
| Drain-Source On-State Resistance | VGS=10V, ID=20A | 2.6 | 3.2 | m | ||
| Drain-Source On-State Resistance | VGS=4.5V, ID=20A | 3.3 | 4.2 | m | ||
| Diode Forward Voltage | IS=1.0A, VGS=0V | 0.6 | 1.2 | V | ||
| Total Gate Charge | VDD=15V, VGS=10V, ID=20A | 134 | nC |
2411220052_MATSUKI-ME95N03-G_C709752.pdf
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