power management solution featuring LRC S-LP2309LT1G P Channel 60V MOSFET with low RDS ON resistance
Key Attributes
Model Number:
S-LP2309LT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
260mΩ@4.5V,1.4A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
17.4pF@30V
Number:
1 P-Channel
Pd - Power Dissipation:
900mW
Input Capacitance(Ciss):
373pF@30V
Gate Charge(Qg):
4.06nC@4.5V
Mfr. Part #:
S-LP2309LT1G
Package:
SOT-23
Product Description
Product Overview
The S-LP2309LT1G is a P-Channel 60V (D-S) MOSFET designed for efficient power management in various electronic applications. It features an extremely low RDS(ON) due to its super high-density cell design, offering exceptional on-resistance and maximum DC current capability. This device is suitable for power management in notebooks, portable equipment, battery-powered systems, DC/DC converters, load switches, DSCs, and LCD display inverters. The material of the product complies with RoHS requirements and is Halogen Free. The 'S-' prefix denotes suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Qualification: AEC-Q101 (for 'S-' prefix variants)
- PPAP Capable: Yes (for 'S-' prefix variants)
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| DrainSource Breakdown Voltage | VBRDSS | VGS = 0, ID = -250A | -60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250A | -1.2 | -1.5 | -1.9 | V |
| Gate Leakage Current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VGS = 0V, VDS = -60 V | -10 | A | ||
| Static DrainSource OnState Resistance | RDS(on) | VGS = -10 V, ID = -1.8 A | 170 | 215 | m | |
| VGS = -4.5 V, ID = -1.4 A | 200 | 260 | m | |||
| Diode Forward Voltage | VSD | VGS = 0 V, IS = -1.2 A | -1.2 | V | ||
| Total Gate Charge | Qg | VGS = -4.5 V, ID =-1A,VDS= -48 V | 4.06 | nC | ||
| Gate-Source Charge | Qgs | VGS = -4.5 V, ID =-1A,VDS= -48 V | 1.04 | nC | ||
| Gate-Drain Charge | Qgd | VGS = -4.5 V, ID =-1A,VDS= -48 V | 2.1 | nC | ||
| Input Capacitance | Ciss | VGS = 0 V, f = 1.0MHz,VDS= -30 V | 373 | pF | ||
| Output Capacitance | Coss | VGS = 0 V, f = 1.0MHz,VDS= -30 V | 24.2 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0 V, f = 1.0MHz,VDS= -30 V | 17.4 | pF | ||
| Gate-Resistance | Rg | VGS = 0 V, VDS=0V,f=1MHz | 6.5 | |||
| DrainSource Voltage | VDSS | 60 | V | |||
| GatetoSource Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | Ta=25 | -1.8 | A | ||
| Continuous Drain Current | ID | Ta=70 | -1.4 | A | ||
| Maximum Power Dissipation | PD | Ta=25 | 1.4 | W | ||
| Pulsed Drain Current | IDM | Steady State t10s | -7.6 | A | ||
| Junction Temperature | Tj | -55 | +150 | |||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Thermal Resistance-Junction to Case | RJC | Note 1 | 90 | /W | ||
| Thermal Resistance-Junction to Ambient | RJA | Ta=25, Note 1 | 150 | /W | ||
| Thermal Resistance-Junction to Ambient | RJA | Ta=70, Note 1 | 225 | /W |
| Device | Marking | Shipping | Package |
|---|---|---|---|
| S-LP2309LT1G | P09 | 3000/Tape&Reel | SOT23(TO-236) |
| S-LP2309LT3G | P09 | 10000/Tape&Reel | SOT23(TO-236) |
2212131830_LRC-S-LP2309LT1G_C5273673.pdf
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