Low voltage power management MOSFET MATSUKI ME8107-G P channel 35V ESD protected surface mount device
Key Attributes
Model Number:
ME8107-G
Product Custom Attributes
Drain To Source Voltage:
35V
Current - Continuous Drain(Id):
14A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
5.5mΩ@10V,7A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
242pF
Number:
1 P-Channel
Input Capacitance(Ciss):
5.33nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
58nC@4.5V
Mfr. Part #:
ME8107-G
Package:
SOP-8
Product Description
Product Overview
The ME8107/ME8107-G is a P-Channel 35V (D-S) ESD Protected MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications like power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface mount package.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Variants: ME8107 (Pb-free), ME8107-G (Green product-Halogen free)
- Certifications: Pb-free, Halogen free (for ME8107-G)
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit |
|---|---|---|---|---|
| Maximum Ratings | VDS | Drain-Source Voltage | -35 | V |
| VGS | Gate-Source Voltage | ±20 | V | |
| ID | Continuous Drain Current (TA=25) | -14 | A | |
| ID | Continuous Drain Current (TA=70) | -11 | A | |
| IDM | Pulsed Drain Current | -59 | A | |
| PD | Maximum Power Dissipation (TA=25) | 2.5 | W | |
| Static Electrical Characteristics | VBR(DSS) | Drain-source breakdown voltage (ID=-10mA, VGS=0V) | -35 | V |
| VGS(th) | Gate Threshold Voltage (VGS= VDS, ID=-250A) | -1 to -3.0 | V | |
| IGSS | Gate Leakage Current (VDS=0V, VGS=±16V) | ±10 | μA | |
| IDSS | Zero Gate Voltage Drain Current (VDS=-30V, VGS=0V) | -1 | μA | |
| RDS(ON) | Drain-Source On-State Resistance (VGS=-10V, ID= -7A) | 5.5 to 7.2 | mΩ | |
| RDS(ON) | Drain-Source On-State Resistance (VGS=-4.5V, ID= -6.5A) | 8 to 12 | mΩ | |
| VSD | Diode Forward Voltage (IDR=-7A, VGS=0V) | 0.78 to 1.2 | V | |
| Dynamic Electrical Characteristics | Qg | Total Gate Charge (VDD=-24V, VGS=-4.5V, ID=-13A) | 58 | nC |
| Qg | Total Gate Charge (VDD=-24V, VGS=-10V, ID=-13A) | 120 | nC | |
| Qgs | Gate-Source Charge | 26 | nC | |
| Qgd | Gate-Drain Charge | 33 | nC | |
| td(on) | Turn-On Delay Time (VDD=-15V, RL =15Ω, VGS=-10V,RG=6Ω) | 77 | ns | |
| tr | Turn-On Rise Time | 32 | ns | |
| td(off) | Turn-Off Delay Time | 213 | ns | |
| tf | Turn-Off Fall Time | 64 | ns | |
| Capacitance | Ciss | Input Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 5330 | pF |
| Coss | Output Capacitance | 710 | pF | |
| Crss | Reverse Transfer Capacitance | 242 | pF | |
| Thermal Characteristics | TJ, Tstg | Junction and Storage Temperature Range | -55 to 150 | °C |
| RθJA | Thermal Resistance-Junction to Ambient (mounted on 1in2 FR4 board with 2 oz copper) | 50 | °C/W |
2411220122_MATSUKI-ME8107-G_C709741.pdf
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