MATSUKI ME45N03T G Power MOSFET Featuring High Continuous Drain Current and Low RDS ON for Power Circuits
Key Attributes
Model Number:
ME45N03T-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
58A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
11.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
41pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
832pF@25V
Pd - Power Dissipation:
75W
Gate Charge(Qg):
11.4nC@5V
Mfr. Part #:
ME45N03T-G
Package:
TO-220
Product Description
Product Overview
The ME45N03T is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, offering extremely low RDS(ON) and exceptional DC current capability. It is designed for power management applications in notebooks, DC/DC converters, load switches, and LCD display inverters.
Product Attributes
- Brand: ME
- Certifications: Pb-free (ME45N03T), Green product-Halogen free (ME45N03T-G)
- Material: DMOS trench technology
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Rating | Unit | Notes |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | |
| Gate-Source Voltage | VGSS | 20 | V | |
| Continuous Drain Current (Tj=150) | ID | 58 | A | TC=25 |
| Continuous Drain Current | ID | 48 | A | TC=70 |
| Pulsed Drain Current | IDM | 232 | A | |
| Maximum Power Dissipation | PD | 75 | W | TC=25 |
| Maximum Power Dissipation | PD | 53 | W | TC=70 |
| Operating Junction Temperature | TJ | -55 to 175 | ||
| Thermal Resistance-Junction to Case | RJC | 2 | /W | * The device mounted on 1in2 FR4 board with 2 oz copper |
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250A |
| Gate Threshold Voltage | VGS(th) | 1 - 3 | V | VDS=VGS, ID=250A |
| Gate-Body Leakage | IGSS | 100 | nA | VDS=0V, VGS=20V |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS=30, VGS=0V |
| Drain-Source On-Resistance | RDS(ON) | 11.5 - 14 | m | VGS=10V, ID=20A* |
| Drain-Source On-Resistance | RDS(ON) | 15 - 21 | m | VGS=4.5V, ID=20A* |
| Diode Forward Voltage | VSD | 0.9 - 1.2 | V | ISD=20A, VGS=0V* |
| Total Gate Charge | Qg | 20 | nC | VDD=24V, VGS=10V, ID=20A |
| Total Gate Charge | Qg | 11.4 | nC | VDD=24V, VGS=5V, ID=20A |
| Gate-Source Charge | Qgs | 4.5 | nC | |
| Gate-Drain Charge | Qgd | 5.3 | nC | |
| Gate Resistance | Rg | 1.7 | VDS=0V, VGS=0V, f=1MHz | |
| Input Capacitance | Ciss | 832 | pF | VDS=25V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 133 | pF | |
| Reverse Transfer Capacitance | Crss | 41 | pF | |
| Turn-On Delay Time | td(on) | 22 | ns | VDD=15V, ID=10A, VGS =5V, RG=4.7 |
| Turn-On Rise Time | tr | 31 | ns | |
| Turn-Off Delay Time | td(off) | 29 | ns | |
| Turn-Off Fall Time | tf | 7 | ns |
2411220106_MATSUKI-ME45N03T-G_C704956.pdf
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