Power Field Effect Transistor Featuring Low RDS ON MATSUKI ME4825 Ideal for Battery Powered Circuits
Key Attributes
Model Number:
ME4825
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.9A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
16mΩ@10V,11.5A
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
130pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
2.5nF@15V
Pd - Power Dissipation:
1.6W
Gate Charge(Qg):
54nC@10V
Mfr. Part #:
ME4825
Package:
SOP-8
Product Description
P-Channel 30-V (D-S) MOSFET ME4825/ME4825-G
The ME4825 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This technology minimizes on-state resistance, making the device suitable for low-voltage applications such as power management in cellular phones, notebook computers, and other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface-mount package. Key features include extremely low RDS(ON) and exceptional DC current capability.
Product Attributes
- Brand: Matsuki Electric/ Force Mos
- Certifications: Pb-free (ME4825), Green product-Halogen free (ME4825-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | ±25 | V | |
| Continuous Drain Current (TA=25) | ID | -8.6 | A | |
| Continuous Drain Current (TA=70) | ID | -6.9 | A | |
| Pulsed Drain Current | IDM | -35 | A | a. Pulse test; pulse width ≤ 300us, duty cycle≤ 2% |
| Maximum Power Dissipation (TA=25) | PD | 2.5 | W | |
| Maximum Power Dissipation (TA=70) | PD | 1.6 | W | |
| Operating Junction Temperature | TJ | -55 to 150 | °C | |
| Thermal Resistance-Junction to Ambient* | RθJA | 50 | °C/W | *The device mounted on 1in² FR4 board with 2 oz copper |
| Electrical Characteristics (TA =25 Unless Otherwise Specified) | ||||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250µA |
| Gate Threshold Voltage | VGS(th) | -1 to -3 | V | VDS=VGS, ID=-250µA |
| Gate Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±25V |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-30V, VGS=0V |
| Drain-Source On-State Resistance | RDS(ON) | 16 to 21 | mΩ | VGS=-10V, ID=-11.5A |
| Drain-Source On-State Resistance | RDS(ON) | 22 to 29 | mΩ | VGS=-4.5V, ID=-9.2A |
| Diode Forward Voltage | VSD | -0.8 to -1.2 | V | IS=-2.5A, VGS=0V |
| Dynamic Characteristics | ||||
| Gate resistance | Rg | 4 | Ω | VGS=0V, VDS=0V, f=1MHz |
| Input Capacitance | Ciss | 2300 to 2500 | pF | VDS=-15V, VGS=0V,f=1MHz |
| Output Capacitance | Coss | 390 | pF | |
| Reverse Transfer Capacitance | Crss | 130 | pF | |
| Total Gate Charge | Qg | 54 to 71 | nC | VDS=-15V, VGS=-10V, ID=-11.5A |
| Gate-Source Charge | Qgs | 14 | nC | |
| Gate-Drain Charge | Qgd | 10 | nC | |
| Turn-On Delay Time | td(on) | 48 to 58 | ns | VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω |
| Turn-On Rise Time | tr | 20 to 24 | ns | |
| Turn-Off Delay Time | td(off) | 90 to 108 | ns | |
| Turn-On Fall Time | tf | 4 to 5 | ns | |
2411220145_MATSUKI-ME4825_C704952.pdf
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