General purpose dual NPN PNP transistor LRC LBC817-25DPMT1G for switching and amplification circuits
Key Attributes
Model Number:
LBC817-25DPMT1G
Product Custom Attributes
Current - Collector Cutoff:
5uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
LBC817-25DPMT1G
Package:
SOT-23-6
Product Description
Product Overview
The LBC817 series are dual general-purpose NPN/PNP transistors designed for various electronic applications. They are available in different gain options and are suitable for use in general-purpose switching and amplification circuits.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material Compliance: RoHS
- Prefix 'S-': Indicates Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Technical Specifications
| Model | Type | VCEO (V) | VCBO (V) | VEBO (V) | IC Continuous (mAdc) | PD (mW) (FR-5) | RJA (C/W) (FR-5) | PD (mW) (Alumina) | RJA (C/W) (Alumina) | TJ, Tstg (C) |
| LBC817-16DPMT1G, LBC817-25DPMT1G, LBC817-40DPMT1G | NPN | 45 | 50 | 5.0 | 500 | 225 | 556 | 300 | 417 | -55 to +150 |
| LBC817-16DPMT1G, LBC817-25DPMT1G, LBC817-40DPMT1G | PNP | -45 | -50 | -5.0 | -500 | 225 | 556 | 300 | 417 | -55 to +150 |
| S-LBC817-16DPMT1G, S-LBC817-25DPMT1G, S-LBC817-40DPMT1G | NPN | 45 | 50 | 5.0 | 500 | 225 | 556 | 300 | 417 | -55 to +150 |
| S-LBC817-16DPMT1G, S-LBC817-25DPMT1G, S-LBC817-40DPMT1G | PNP | -45 | -50 | -5.0 | -500 | 225 | 556 | 300 | 417 | -55 to +150 |
| Model | Characteristic | Symbol | Min | Typ | Max | Unit | Condition |
| NPN | CollectorEmitter Breakdown Voltage | V(BR)CEO | 45 | V | IC = 10 mA | ||
| CollectorEmitter Breakdown Voltage | V(BR)CES | 50 | V | VEB = 0, IC = 10 A | |||
| EmitterBase Breakdown Voltage | V(BR)EBO | 5.0 | V | IE = 1.0 A | |||
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 20 V | |||
| Collector Cutoff Current | ICBO | 5.0 | A | VCB = 20 V, TA = 150C | |||
| DC Current Gain | hFE | 100 | 160 | 250 | IC = 100 mA, VCE = 1.0 V (BC817-16) | ||
| NPN | DC Current Gain | hFE | 250 | 400 | 600 | IC = 500 mA, VCE = 1.0 V | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.7 | V | IC = 500 mA, IB = 50 mA | |||
| BaseEmitter On Voltage | VBE(on) | 1.2 | V | IC = 500 mA, VCE = 1.0 V | |||
| CurrentGain Bandwidth Product | fT | 100 | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | |||
| Output Capacitance | Cobo | 10 | pF | VCB = 10 V, f = 1.0 MHz | |||
| PNP | CollectorEmitter Breakdown Voltage | V(BR)CEO | 45 | V | IC = 10 mA | ||
| CollectorEmitter Breakdown Voltage | V(BR)CES | 50 | V | VEB = 0, IC = 10 A | |||
| EmitterBase Breakdown Voltage | V(BR)EBO | 5.0 | V | IE = 1.0 A | |||
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 20 V | |||
| Collector Cutoff Current | ICBO | 5.0 | A | VCB = 20 V, TJ = 150C | |||
| DC Current Gain | hFE | 100 | 160 | 250 | IC = 100 mA, VCE = 1.0 V (BC807-16) | ||
| PNP | DC Current Gain | hFE | 250 | 400 | 600 | IC = 500 mA, VCE = 1.0 V | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.7 | V | IC = 500 mA, IB = 50 mA | |||
| BaseEmitter On Voltage | VBE(on) | 1.2 | V | IC = 500 mA, IB = 1.0 V | |||
| CurrentGain Bandwidth Product | fT | 100 | MHz | IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz | |||
| Output Capacitance | Cobo | 10 | pF | VCB = 10 V, f = 1.0 MHz |
2108150130_LRC-LBC817-25DPMT1G_C2857372.pdf
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