PNP Transistor MCC BC856S TP Plastic Encapsulated Device with Multi Chip Design and Lead Free Finish

Key Attributes
Model Number: BC856S-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC856S-TP
Package:
SOT-363
Product Description

Product Overview

The BC856S is a PNP plastic-encapsulated transistor designed for various electronic applications. It features a multi-chip design, halogen-free and "Green" compliance, and meets UL 94 V-0 flammability rating. This device is lead-free and RoHS compliant, indicating a commitment to environmental standards.

Product Attributes

  • Brand: MCC (Micro Commercial Components)
  • Material: Plastic-Encapsulate
  • Certifications: Halogen Free, "Green" Device, Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant
  • Origin: Not specified
  • Color: Not specified

Technical Specifications

ParameterSymbolRatingConditionsUnit
Operating Junction Temperature Range-55 to +150
Storage Temperature Range-55 to +150
Collector CurrentIC-100mA
Collector Power DissipationPC200mW
Collector-Emitter VoltageVCEO-65V
Emitter-Base VoltageVEBO-5V
Collector-Base VoltageVCBO-80V
Collector-Base Cutoff CurrentICBO-15VCB=-30V, IE=0nA
Emitter-Base Cutoff CurrentIEBO-100VEB=-5V, IC=0nA
DC Current GainhFE110VCE=-5V, IC=-2mA
DC Current GainhFEIC=-100mA, IB=-5mA
DC Current GainhFEIC=-10mA, IB=-0.5mA
Collector-Emitter Saturation VoltageVCE(sat)-0.75VCE=-5V, IC=-2mAV
Collector-Emitter Saturation VoltageVCE(sat)-0.85VCE=-5V, IC=-10mAV
Base-Emitter Saturation VoltageVBE(sat)-0.75IC=-10mA, IB=-0.5mAV
Base-Emitter Saturation VoltageVBE(sat)-0.65IC=-100mA, IB=-5mAV
Collector Output CapacitanceCob2.5VCB=-10V, IE=0, f=1MHzpF
Transition FrequencyfT100VCE=-5V, IC=-10mA, f=100MHzMHz
Emitter-Base Breakdown VoltageV(BR)EBO-5IE=-10A, IC=0V
Collector-Emitter Breakdown VoltageV(BR)CEO-65IC=-10mA, IB=0V
Collector-Base Breakdown VoltageV(BR)CBO-80IC=-10A, IE=0V
Thermal Resistance625Junction to Ambient/W

Dimensions (SOT-363)

DIMINCHESMMNOTE
MINMAXMINMAXTYP.
A0.0060.0140.150.35
B0.0450.0531.151.35
C0.0790.0962.002.45
D
G0.0470.0551.201.40
H0.0710.0871.802.20
J-----0.004-----0.10
K0.0310.0430.801.10
L0.0100.0180.260.46
M0.0030.0060.080.15
0.0260.65

Suggested Solder Pad Layout (mm)

0.65 0.40 1.94 0.80

Ordering Information

Device: BC856S, Packing: Tape&Reel, 3Kpcs/Reel


2410010231_MCC-BC856S-TP_C779243.pdf

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