NPN Silicon Transistor LRC LBC847BTT1G SC89 Package Designed General Purpose Amplifier Surface Mount
Key Attributes
Model Number:
LBC847BTT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC847BTT1G
Package:
SC-89
Product Description
Product Overview
These NPN silicon transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package, which is suitable for low power surface mount applications. Pb-Free packages are available.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Series: LBC847ATT1G Series
- Package: SC-89
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix variants)
Technical Specifications
| Characteristic | Symbol | LBC847A (Min/Typ/Max) | LBC847B (Min/Typ/Max) | LBC847C (Min/Typ/Max) | Unit |
| MAXIMUM RATINGS | |||||
| CollectorEmitter Voltage | VCEO | 45 | V | ||
| CollectorBase Voltage | VCBO | 50 | V | ||
| EmitterBase Voltage | VEBO | 6.0 | V | ||
| Collector Current Continuous | IC | 100 | mAdc | ||
| THERMAL CHARACTERISTICS (Note 1: FR-4 @ min pad) | |||||
| Total Device Dissipation | PD | 200 | mW | ||
| Derated above 25C | 1.6 | mW/C | |||
| Thermal Resistance, JunctiontoAmbient | R JA | 600 | C/W | ||
| THERMAL CHARACTERISTICS (Note 2: FR-4 @ 1.0 x 1.0 in pad) | |||||
| Total Device Dissipation | PD | 300 | mW | ||
| Derated above 25C | 2.4 | mW/C | |||
| Thermal Resistance, JunctiontoAmbient | R JA | 400 | C/W | ||
| Junction and Storage Temperature Range | TJ, Tstg | 55 to +150 | C | ||
| ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) | |||||
| CollectorEmitter Breakdown Voltage (IC = 10 mA) | V(BR)CEO | 45 | V | ||
| CollectorEmitter Breakdown Voltage (IC = 10 A, VEB = 0) | V(BR)CES | 50 | V | ||
| CollectorBase Breakdown Voltage (IC = 10 A) | V(BR)CBO | 50 | V | ||
| EmitterBase Breakdown Voltage (IE = 1.0 mA) | V(BR)EBO | 6.0 | V | ||
| Collector Cutoff Current (VCB = 30 V) | ICBO | nA | |||
| Collector Cutoff Current (VCB = 30 V, TA = 150C) | ICBO | 5.0 | A | ||
| DC Current Gain (IC = 10 A, VCE = 5.0 V) | hFE | 110 | 200 | 420 | |
| DC Current Gain (IC = 2.0 mA, VCE = 5.0 V) | hFE | 90220 | 150450 | 270800 | |
| CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | 0.25 | V | ||
| CollectorEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | VCE(sat) | 0.6 | V | ||
| BaseEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | 0.7 | V | ||
| BaseEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | VBE(sat) | 0.9 | V | ||
| BaseEmitter Voltage (IC = 2.0 mA, VCE = 5.0 V) | VBE(on) | 580770 | 660770 | 700770 | mV |
| BaseEmitter Voltage (IC = 10 mA, VCE = 5.0 V) | VBE(on) | 700 | mV | ||
| CurrentGain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 | MHz | ||
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | 4.5 | pF | ||
| Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) | NF | 10 | dB | ||
1912111437_LRC-LBC847BTT1G_C383192.pdf
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