High Gain PNP Silicon Transistor LRC L2SA1576ART1G with 0.15 Watt Power Rating and SC70 Package Type
Key Attributes
Model Number:
L2SA1576ART1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
140MHz
Type:
PNP
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L2SA1576ART1G
Package:
SC-70
Product Description
Product Overview
The L2SA1576AQT1G Series from LESHAN RADIO COMPANY, LTD. are PNP silicon general-purpose transistors designed for a wide range of applications. These transistors offer reliable performance with key electrical characteristics such as collector-emitter breakdown voltage, DC current transfer ratio, and transition frequency.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix series), RoHS compliant
Technical Specifications
| Device Marking | V CEO (Max) | V CBO (Max) | I C (Continuous) | P C (Max) | h FE (Min) | h FE (Max) | f T (Typ) | Package | Ordering Information |
| L2SA1576AQT1G = FQ | -50 V | -60 V | -150 mAdc | 0.15 W | 120 | 560 | 140 MHz | SC-70/SOT-323 | L2SA1576AQLT1G (3000/Tape & Reel) |
| L2SA1576ART1G = FR | -50 V | -60 V | -150 mAdc | 0.15 W | 180 | 390 | 140 MHz | SC-70/SOT-323 | L2SA1576AQLT3G (10000/Tape & Reel) |
| L2SA1576AST1G = FS | -50 V | -60 V | -150 mAdc | 0.15 W | 270 | 560 | 140 MHz | SC-70/SOT-323 | N/A |
| S-L2SA1576AQT1G Series | -50 V | -60 V | -150 mAdc | 0.15 W | 120 | 560 | 140 MHz | SC-70 | S-L2SA1576AQLT1G |
| S-L2SA1576AQLT1G Series | -50 V | -60 V | -150 mAdc | 0.15 W | 120 | 560 | 140 MHz | SC-70 | N/A |
| S-L2SA1576AQLT3G Series | -50 V | -60 V | -150 mAdc | 0.15 W | 120 | 560 | 140 MHz | SC-70 | N/A |
2410010130_LRC-L2SA1576ART1G_C383166.pdf
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