20V P Channel MOSFET LRC LP3443LT1G Featuring Low RDS ON and High Density Cell Design for Automotive
Key Attributes
Model Number:
LP3443LT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
74.8pF
Number:
1 P-Channel
Output Capacitance(Coss):
88.5pF
Input Capacitance(Ciss):
797.3pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
16.6nC@10V
Mfr. Part #:
LP3443LT1G
Package:
SOT-23E
Product Description
Product Overview
The LP3443LT1G and S-LP3443LT1G are 20V P-Channel Enhancement-Mode MOSFETs designed with advanced trench process technology and high-density cell design for ultra-low on-resistance. These devices are suitable for automotive and other applications requiring unique site and control change requirements, with the 'S-' prefix variants being AEC-Q101 qualified and PPAP capable. They offer excellent performance with low RDS(ON) at various gate-source voltages and drain currents, and are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- ESD Rating: Class 0 (<100V) per Human Body Model
- S- prefix variants: AEC-Q101 qualified and PPAP capable
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Model |
|---|---|---|---|---|---|---|
| DrainSource Voltage | VDSS | -20 | V | LP3443LT1G, S-LP3443LT1G | ||
| GatetoSource Voltage Continuous | VGS | 12 | V | LP3443LT1G, S-LP3443LT1G | ||
| Drain Current (Continuous) | ID | -4.7 | A | LP3443LT1G, S-LP3443LT1G | ||
| Power Dissipation (TA = 25C) | PD | 1.1 | W | LP3443LT1G, S-LP3443LT1G | ||
| Power Dissipation (TA = 75C) | PD | 0.7 | W | LP3443LT1G, S-LP3443LT1G | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 110 | C/W | LP3443LT1G, S-LP3443LT1G | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | +150 | C | LP3443LT1G, S-LP3443LT1G | |
| DrainSource Breakdown Voltage | VBRDSS | -20 | V | LP3443LT1G, S-LP3443LT1G | ||
| Gate Threshold Voltage | VGS(th) | -1.4 | -0.85 | -0.6 | V | LP3443LT1G, S-LP3443LT1G |
| Zero Gate Voltage Drain Current | IDSS | -100 | A | LP3443LT1G, S-LP3443LT1G | ||
| GatetoSource Leakage Current | IGSS | 100 | nA | LP3443LT1G, S-LP3443LT1G | ||
| Static DrainSource OnState Resistance (@VGS=-4.5V, ID=-4.7A) | RDS(on) | 58 | 70 | m | LP3443LT1G, S-LP3443LT1G | |
| Static DrainSource OnState Resistance (@VGS=-2.5V, ID=-1.0A) | RDS(on) | 110 | m | LP3443LT1G, S-LP3443LT1G | ||
| Diode Forward Voltage | VSD | -1.2 | V | LP3443LT1G, S-LP3443LT1G | ||
| Total Gate Charge | Qg | 16.6 | nC | LP3443LT1G, S-LP3443LT1G | ||
| Gate-to-Source Gate Charge | Qgs | 0.9 | nC | LP3443LT1G, S-LP3443LT1G | ||
| Gate-to-Drain Charge | Qgd | 2.7 | nC | LP3443LT1G, S-LP3443LT1G | ||
| Turn-On Delay Time | td(on) | 15.7 | ns | LP3443LT1G, S-LP3443LT1G | ||
| Rise Time | tr | 13 | ns | LP3443LT1G, S-LP3443LT1G | ||
| Turn-Off Delay Time | td(off) | 70 | ns | LP3443LT1G, S-LP3443LT1G | ||
| Fall Time | tf | 17.5 | ns | LP3443LT1G, S-LP3443LT1G | ||
| Input Capacitance | Ciss | 797.3 | pF | LP3443LT1G, S-LP3443LT1G | ||
| Output Capacitance | Coss | 88.5 | pF | LP3443LT1G, S-LP3443LT1G | ||
| Reverse Transfer Capacitance | Crss | 74.8 | pF | LP3443LT1G, S-LP3443LT1G | ||
| Forward Transconductance | gfs | 8.6 | S | LP3443LT1G, S-LP3443LT1G | ||
| Body Diode Reverse Recovery Time | trr | 22.15 | ns | LP3443LT1G, S-LP3443LT1G | ||
| Body Diode Reverse Recovery Charge | Qrr | 6.61 | nC | LP3443LT1G, S-LP3443LT1G | ||
| Gate Resistance | Rg | LP3443LT1G, S-LP3443LT1G | ||||
| Device Marking | P34 | LP3443LT1G | ||||
| Shipping | 3000/Tape&Reel | LP3443LT1G | ||||
| Device Marking | P34 | S-LP3443LT1G | ||||
| Shipping | 10000/Tape&Reel | S-LP3443LT1G | ||||
| Package Type | SOT23(TO-236) | LP3443LT1G, S-LP3443LT1G |
2410010103_LRC-LP3443LT1G_C354989.pdf
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