60V P Channel Power MOSFET LRC S-LPB8660DT0AG Featuring RoHS Compliance and Low Thermal Resistance for Electronics
Key Attributes
Model Number:
S-LPB8660DT0AG
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ
Gate Threshold Voltage (Vgs(th)):
-
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
46pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.17nF
Output Capacitance(Coss):
61pF
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
S-LPB8660DT0AG
Package:
DFN3333-8A
Product Description
Product Overview
The S-LPB8660DT0AG is a 60V P-Channel Power MOSFET designed for applications such as Load Switches, DC/DC Conversion, and Motor Drives. It offers low thermal impedance and fast switching speeds, with material compliance to RoHS requirements and Halogen Free standards. This device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Qualification: AEC-Q101
- PPAP Capable: Yes
- Device Marking: P6C
- Package Type: DFN3333-8A
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Thermal Resistance,Junction-to-Ambient | RJA | 71 | /W | Surface mounted on "1.5 x 1.5" FR4 board using 1 sq in pad, 2 oz Cu. | ||
| Thermal Resistance,Junction-to-Case | RJC | 1.7 | /W | |||
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | (VDS = VGS , ID = -250 A) | |
| Gate Leakage Current | IGSS | 100 | nA | (VDS = 0 V, VGS = 20 V) | ||
| Zero Gate Voltage Drain Current | IDSS | -60 | A | (VDS = -48 V, VGS = 0 V) | ||
| Drain-Source On-Resistance | RDS(ON) | 2.9 | 3.5 | m | (VGS = -10 V, ID = -3.6 A) | |
| Drain-Source On-Resistance | RDS(ON) | 6.6 | 8 | m | (VGS = -4.5 V, ID = -2.5 A) | |
| Diode Forward Voltage | VSD | -1.2 | V | (IS = -1 A, VGS = 0 V) | ||
| DrainSource Breakdown Voltage | VBRDSS | -60 | V | (VGS = 0 V, ID = -250 A) | ||
| Continuous Drain Current | ID | -3.8 | -3.1 | A | (TC = 25) | |
| Continuous Drain Current | ID | -1.7 | A | (TA = 25) | ||
| Continuous Drain Current | ID | -1.7 | A | (TA = 70) | ||
| Pulsed Drain Current | IDM | -15 | A | (TC = 25) | ||
| Power Dissipation | PD | 15 | W | (Note1) | ||
| Avalanche Current | IAS | -11.25 | A | (L=0.1mH) | ||
| Avalanche energy | EAS | 15 | mJ | (L=0.1mH) | ||
| Total Gate Charge | Qg | 1170 | nC | (VDS= -30 V, VGS = -4.5 V, ID= -3.6 A) | ||
| Gate-Source Charge | Qgs | 61 | nC | |||
| Gate-Drain Charge | Qgd | 46 | nC | |||
| Input Capacitance | Ciss | 1170 | pF | (VDS = -30 V, VGS = 0 V, f = 1 MHz) | ||
| Output Capacitance | Coss | 61 | pF | (VDS = -30 V, VGS = 0 V, f = 1 MHz) | ||
| Reverse Transfer Capacitance | Crss | 46 | pF | (VDS = -30 V, VGS = 0 V, f = 1 MHz) | ||
| Turn-On Delay Time | td(on) | 8 | ns | (VGS = -4.5 V, ID = -3.6 A) | ||
| Rise Time | tr | 21 | ns | (VGS = -4.5 V, ID = -3.6 A) | ||
| Turn-Off Delay Time | td(off) | 55 | ns | (VGS = -4.5 V, ID = -3.6 A) | ||
| Fall Time | tf | 11.25 | ns | (VGS = -4.5 V, ID = -3.6 A) |
| Model | Device Marking | Voltage | Package | Shipping | Manufacturer |
|---|---|---|---|---|---|
| S-LPB8660DT0AG | P6C | 60V | DFN3333-8A | 2000/Tape&Reel | Leshan Radio Company, LTD. |
Dimensions (DFN3333-8A)
| Dimension | MIN | NOM | MAX |
|---|---|---|---|
| A | 0.60 | 0.65 | 0.70 |
| A1 | 0.00 | 0.03 | 0.05 |
| b | 0.27 | 0.32 | 0.37 |
| D | 3.25 | 3.30 | 3.35 |
| E | 3.25 | 3.30 | 3.35 |
| D1 | 2.22 | 2.27 | 2.32 |
| E1 | 1.60 | 1.65 | 1.70 |
| e | 0.65BSC | ||
| L | 0.40 | 0.45 | 0.50 |
| L1 | 0.30 | 0.35 | 0.40 |
| A3 | 0.152REF. | ||
All Dimensions in mm
2212131830_LRC-S-LPB8660DT0AG_C5273530.pdf
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