Automotive high voltage transistor LRC LMBT5551LT1G HW featuring RoHS and Halogen Free certification
Key Attributes
Model Number:
LMBT5551LT1G-HW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
LMBT5551LT1G-HW
Package:
SOT-23
Product Description
Product Overview
The LMBT5551LT1G and S-LMBT5551LT1G are high voltage transistors designed for automotive and other applications requiring unique site and control change requirements. The S- prefix variant is AEC-Q101 qualified and PPAP capable. These transistors are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Certifications: RoHS, Halogen Free, AEC-Q101 (S- prefix)
- Origin: China (implied by manufacturer)
Technical Specifications
| Parameter | Symbol | LMBT5551LT1G | S-LMBT5551LT1G | Unit | Notes |
| Collector-Emitter Voltage | VCEO | 160 | 160 | V | |
| Collector-Base Voltage | VCBO | 180 | 180 | V | |
| Emitter-Base Voltage | VEBO | 6 | 6 | V | |
| Collector current--Continuous | IC | 225 | 225 | mA | |
| Total Device Dissipation, FR-5 Board | PD | 225 | 225 | mW | @ TA = 25C, FR-5 = 1.0x0.75x0.062 in. |
| Derate above 25C | 1.8 | 1.8 | mW/C | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 417 | 417 | /W | |
| Total Device Dissipation, Alumina Substrate | PD | 556 | 556 | mW | @ TA = 25C, Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. |
| Derate above 25C | 2.4 | 2.4 | mW/C | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 1.8 | 1.8 | /W | |
| Junction and Storage temperature | TJ,Tstg | -55~+150 | -55~+150 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 160 | 160 | V | (IC = 1.0 mA, IB = 0) |
| Collector-Base Breakdown voltage | V(BR)CBO | 180 | 180 | V | (IC = 100A, IE = 0) |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | 6 | V | (IE = 10 A, IC = 0) |
| Collector Cutoff Current | ICBO | 50 | 50 | nA | (VCB = 120 V, IE = 0) |
| Collector Cutoff Current | ICBO | 100 | 100 | nA | (VCB = 120 V, IE = 0, TA = 100C) |
| Emitter Cutoff Current | IEBO | 50 | 50 | nA | (VEB = 4.0 V, IC = 0) |
| DC Current Gain | HFE | 80-250 | 80-250 | (IC = 1.0 mA, VCE = 5.0 V) | |
| DC Current Gain | HFE | - | - | (IC = 10 mA, VCE = 5.0 V) | |
| DC Current Gain | HFE | - | - | (IC = 50 mA, VCE = 5.0 V) | |
| Collector-Emitter Saturation Voltage | VCE(S) | 0.2 | 0.2 | V | (IC = 10 mA, IB = 1.0 mA) |
| Collector-Emitter Saturation Voltage | VCE(S) | 0.15 | 0.15 | V | (IC = 50 mA, IB = 5.0 mA) |
| Base-Emitter Saturation Voltage | VBE(S) | 1 | 1 | V | (IC = 10 mA, IB = 1.0 mA) |
| Base-Emitter Saturation Voltage | VBE(S) | 1 | 1 | V | (IC = 50 mA, IB = 5.0 mA) |
| Collector Emitter Cut-off Current | ICES | 50 | 50 | nA | (VCE = 10 V) |
| Collector Emitter Cut-off Current | ICES | 100 | 100 | nA | (VCE = 75 V) |
| Collector-Emitter cutoff Current | ICEO | 10 | 10 | A | (VCE110V, IB=0) |
2211091800_LRC-LMBT5551LT1G-HW_C2941697.pdf
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