General Purpose Silicon Transistor LRC LBC848BLT1G with AEC Q101 Qualification and RoHS Compliance
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC846ALT1G Series
The LBC846ALT1G series NPN silicon transistors are general-purpose devices designed for various electronic applications. They offer high reliability with an ESD rating of >4000 V (Human Body Model) and >400 V (Machine Model). The "S-" prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: AEC-Q101 Qualified (S-prefix devices)
- RoHS Compliance: Declared
Technical Specifications
| Device Marking | Package | Shipping | Collector-Emitter Voltage (VCEO) | Collector-Base Voltage (VCBO) | Emitter-Base Voltage (VEBO) | Collector Current (IC) Continuous | Total Device Dissipation (PD) FR-5 Board | Thermal Resistance (R JA) FR-5 Board | Total Device Dissipation (PD) Alumina Substrate | Thermal Resistance (R JA) Alumina Substrate | Junction and Storage Temperature (TJ, Tstg) |
| LBC846ALT1G | SOT-23 | 3000/Tape&Reel | 65 V (LBC846) | 80 V (LBC846) | 6.0 V (LBC846) | 100 mAdc | 225 mW @ 25C, Derate 1.8 mW/C | 556 C/W | 300 mW @ 25C, Derate 2.4 mW/C | 417 C/W | 55 to +150 C |
| LBC847ALT1G | SOT-23 | 3000/Tape&Reel | 45 V (LBC847, LBC850) | 50 V (LBC847, LBC850) | 6.0 V (LBC847, LBC850) | 100 mAdc | 225 mW @ 25C, Derate 1.8 mW/C | 556 C/W | 300 mW @ 25C, Derate 2.4 mW/C | 417 C/W | 55 to +150 C |
| LBC848ALT1G | SOT-23 | 3000/Tape&Reel | 30 V (LBC848, LBC849) | 30 V (LBC848, LBC849) | 5.0 V (LBC848, LBC849) | 100 mAdc | 225 mW @ 25C, Derate 1.8 mW/C | 556 C/W | 300 mW @ 25C, Derate 2.4 mW/C | 417 C/W | 55 to +150 C |
| LBC849BLT1G | SOT-23 | 3000/Tape&Reel | 30 V (LBC848, LBC849) | 30 V (LBC848, LBC849) | 5.0 V (LBC848, LBC849) | 100 mAdc | 225 mW @ 25C, Derate 1.8 mW/C | 556 C/W | 300 mW @ 25C, Derate 2.4 mW/C | 417 C/W | 55 to +150 C |
| LBC850BLT1G | SOT-23 | 3000/Tape&Reel | 45 V (LBC847, LBC850) | 50 V (LBC847, LBC850) | 6.0 V (LBC847, LBC850) | 100 mAdc | 225 mW @ 25C, Derate 1.8 mW/C | 556 C/W | 300 mW @ 25C, Derate 2.4 mW/C | 417 C/W | 55 to +150 C |
| S-LBC846ALT1G | SOT-23 | 3000/Tape&Reel | 65 V (LBC846) | 80 V (LBC846) | 6.0 V (LBC846) | 100 mAdc | 225 mW @ 25C, Derate 1.8 mW/C | 556 C/W | 300 mW @ 25C, Derate 2.4 mW/C | 417 C/W | 55 to +150 C |
Electrical Characteristics (TA = 25C unless otherwise noted)
| Characteristic | Symbol | LBC846A,B | LBC847A,B,C, LBC850B,C | LBC848A,B,C, LBC849B,C | Unit | Min | Typ | Max |
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 65 | 45 | 30 | Vdc | |||
| CollectorEmitter Breakdown Voltage | V(BR)CES | 80 | 50 | 30 | Vdc | |||
| CollectorBase Breakdown Voltage | V(BR)CBO | 80 | 50 | 30 | Vdc | |||
| EmitterBase Breakdown Voltage | V(BR)EBO | 6.0 | 6.0 | 5.0 | Vdc | |||
| Collector Cutoff Current | ICBO | nA / A | 15 nA (VCB=30V) / 5.0 A (VCB=30V, TA=150C) | |||||
| DC Current Gain | hFE | 110200 | 180290 | 220450 | ||||
| DC Current Gain | hFE | 200420 | 290520 | |||||
| DC Current Gain | hFE | 420800 | ||||||
| CollectorEmitter Saturation Voltage | VCE(sat) | Vdc | 0.25 (IC=10mA, IB=0.5mA) | 0.6 (IC=100mA, IB=5.0mA) | ||||
| BaseEmitter Saturation Voltage | VBE(sat) | Vdc | 0.7 (IC=10mA, IB=0.5mA) | 0.9 (IC=100mA, IB=5.0mA) | ||||
| BaseEmitter Voltage | VBE(on) | 580660 | 700770 | mV | ||||
| CurrentGain Bandwidth Product | fT | 100 | MHz | |||||
| Output Capacitance | Cobo | 4.5 | pF | |||||
| Noise Figure | NF | dB | 4.0 (IC=0.2mA, VCE=5.0Vdc, RS=2.0k, f=1.0kHz) | 10 (IC=0.2mA, VCE=5.0Vdc, RS=2.0k, f=1.0kHz) |
2304140030_LRC-LBC848BLT1G_C131852.pdf
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