General Purpose Silicon Transistor LRC LBC848BLT1G with AEC Q101 Qualification and RoHS Compliance

Key Attributes
Model Number: LBC848BLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC848BLT1G
Package:
SOT-23
Product Description

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC846ALT1G Series

The LBC846ALT1G series NPN silicon transistors are general-purpose devices designed for various electronic applications. They offer high reliability with an ESD rating of >4000 V (Human Body Model) and >400 V (Machine Model). The "S-" prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material: Silicon
  • Certifications: AEC-Q101 Qualified (S-prefix devices)
  • RoHS Compliance: Declared

Technical Specifications

Device MarkingPackageShippingCollector-Emitter Voltage (VCEO)Collector-Base Voltage (VCBO)Emitter-Base Voltage (VEBO)Collector Current (IC) ContinuousTotal Device Dissipation (PD) FR-5 BoardThermal Resistance (R JA) FR-5 BoardTotal Device Dissipation (PD) Alumina SubstrateThermal Resistance (R JA) Alumina SubstrateJunction and Storage Temperature (TJ, Tstg)
LBC846ALT1GSOT-233000/Tape&Reel65 V (LBC846)80 V (LBC846)6.0 V (LBC846)100 mAdc225 mW @ 25C, Derate 1.8 mW/C556 C/W300 mW @ 25C, Derate 2.4 mW/C417 C/W55 to +150 C
LBC847ALT1GSOT-233000/Tape&Reel45 V (LBC847, LBC850)50 V (LBC847, LBC850)6.0 V (LBC847, LBC850)100 mAdc225 mW @ 25C, Derate 1.8 mW/C556 C/W300 mW @ 25C, Derate 2.4 mW/C417 C/W55 to +150 C
LBC848ALT1GSOT-233000/Tape&Reel30 V (LBC848, LBC849)30 V (LBC848, LBC849)5.0 V (LBC848, LBC849)100 mAdc225 mW @ 25C, Derate 1.8 mW/C556 C/W300 mW @ 25C, Derate 2.4 mW/C417 C/W55 to +150 C
LBC849BLT1GSOT-233000/Tape&Reel30 V (LBC848, LBC849)30 V (LBC848, LBC849)5.0 V (LBC848, LBC849)100 mAdc225 mW @ 25C, Derate 1.8 mW/C556 C/W300 mW @ 25C, Derate 2.4 mW/C417 C/W55 to +150 C
LBC850BLT1GSOT-233000/Tape&Reel45 V (LBC847, LBC850)50 V (LBC847, LBC850)6.0 V (LBC847, LBC850)100 mAdc225 mW @ 25C, Derate 1.8 mW/C556 C/W300 mW @ 25C, Derate 2.4 mW/C417 C/W55 to +150 C
S-LBC846ALT1GSOT-233000/Tape&Reel65 V (LBC846)80 V (LBC846)6.0 V (LBC846)100 mAdc225 mW @ 25C, Derate 1.8 mW/C556 C/W300 mW @ 25C, Derate 2.4 mW/C417 C/W55 to +150 C

Electrical Characteristics (TA = 25C unless otherwise noted)

CharacteristicSymbolLBC846A,BLBC847A,B,C, LBC850B,CLBC848A,B,C, LBC849B,CUnitMinTypMax
CollectorEmitter Breakdown VoltageV(BR)CEO654530Vdc
CollectorEmitter Breakdown VoltageV(BR)CES805030Vdc
CollectorBase Breakdown VoltageV(BR)CBO805030Vdc
EmitterBase Breakdown VoltageV(BR)EBO6.06.05.0Vdc
Collector Cutoff CurrentICBOnA / A15 nA (VCB=30V) / 5.0 A (VCB=30V, TA=150C)
DC Current GainhFE110200180290220450
DC Current GainhFE200420290520
DC Current GainhFE420800
CollectorEmitter Saturation VoltageVCE(sat)Vdc0.25 (IC=10mA, IB=0.5mA)0.6 (IC=100mA, IB=5.0mA)
BaseEmitter Saturation VoltageVBE(sat)Vdc0.7 (IC=10mA, IB=0.5mA)0.9 (IC=100mA, IB=5.0mA)
BaseEmitter VoltageVBE(on)580660700770mV
CurrentGain Bandwidth ProductfT100MHz
Output CapacitanceCobo4.5pF
Noise FigureNFdB4.0 (IC=0.2mA, VCE=5.0Vdc, RS=2.0k, f=1.0kHz)10 (IC=0.2mA, VCE=5.0Vdc, RS=2.0k, f=1.0kHz)

2304140030_LRC-LBC848BLT1G_C131852.pdf

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