Low voltage low current NPN transistor luJing BC847C in SOT-23 package for various gain classifications
Key Attributes
Model Number:
BC847C
Product Custom Attributes
Mfr. Part #:
BC847C
Package:
SOT-23
Product Description
Product Overview
General purpose NPN bipolar transistors designed for low current (max. 100 mA) and low voltage (max. 65 V) applications. Available in SOT-23 plastic encapsulation, these transistors offer versatile usage with various gain classifications.
Product Attributes
- Case Style: SOT-23 molded plastic
- Mounting Position: Any
- Package: SOT-23
- Shipping: Tape & Reel
Technical Specifications
| Parameter | Symbol | BC846 | BC847 | BC848 | Unit | Test Conditions | Min | Typ | Max |
| Collector-base voltage | VCBO | 80 | 50 | 30 | V | ||||
| Collector-emitter voltage | VCEO | 65 | 45 | 30 | V | ||||
| Emitter-base voltage | VEBO | 6 | 6 | 5 | V | ||||
| Collector current | IC | mA | 100 | ||||||
| Peak collector current | ICM | mA | 100 | ||||||
| Peak base current | IBM | mA | 200 | ||||||
| Total power dissipation | Ptot | mW | Transistor mounted on an FR4 printed-circuit board, standard footprint. | 500 | |||||
| Junction temperature | Tj | ℃ | 150 | ||||||
| Storage temperature | Tstg | ℃ | -65 | to | +150 | ||||
| Operating ambient temperature | Tamb | ℃ | -65 | to | +150 | ||||
| Thermal resistance from junction to ambient | Rth j-a | K/W | Transistor mounted on an FR4 printed-circuit board, standard footprint. | 200 | |||||
| Collector cutoff current | ICBO | nA | VCB = 30 V, IE = 0 | 15 | |||||
| Collector cutoff current | ICBO | uA | VCB = 30 V, IE = 0 , Tj = 150 | 5 | |||||
| Emitter cutoff current | IEBO | nA | VEB = 5 V, IC = 0 | 100 | |||||
| DC current gain | hFE | 110-450 | 110-800 | IC = 10 mA; IB = 0.5 mA | |||||
| DC current gain | hFE | 110-180 | 110-220 | BC846A,BC847A | |||||
| DC current gain | hFE | 200-290 | 200-450 | BC846B,BC847B,BC848B | |||||
| DC current gain | hFE | 420-520 | 420-800 | BC847C | |||||
| Collector-emitter saturation voltage | VCE(sat) | mV | IC = 10 mA; IB = 0.5 mA | 250 | |||||
| Collector-emitter saturation voltage | VCE(sat) | mV | IC = 100 mA; IB = 5 mA; * | 600 | |||||
| Collector-emitter saturation voltage | VCE(sat) | mV | IC = 10 mA; IB = 0.5 mA | 700 | |||||
| Collector-emitter saturation voltage | VCE(sat) | mV | IC = 100 mA; IB = 5 mA; * | 900 | |||||
| Base-emitter saturation voltage | VBE(sat) | mV | IC = 2 mA; VCE = 5 V | 580 | 660 | 700 | |||
| Base-emitter saturation voltage | VBE(sat) | mV | IC = 10 mA; VCE = 5 V | 770 | |||||
| Base-emitter voltage | VBE | V | IC = 10 mA; VCE = 5 V | 0.95 | |||||
| Transition frequency | fT | MHz | VCE = 5 V; IC = 10 mA;f = 100 MHz | 100 | |||||
| Collector capacitance | CC | pF | VCB = 10 V; IE = Ie = 0;f = 1 MHz | 2.5 | |||||
| Noise figure | NF | dB | IC = 200A; VCE = 5 V;RS = 2 k; = 1 kHz;B = 200 Hz | 2 | 10 |
2512021845_luJing-BC847C_C53058842.pdf
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