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quality NPN Surface Mount Transistor LRC S-LDTD113ZLT1G Featuring Monolithic Bias Resistors for Automotive Electronics factory
quality NPN Surface Mount Transistor LRC S-LDTD113ZLT1G Featuring Monolithic Bias Resistors for Automotive Electronics factory

NPN Surface Mount Transistor LRC S-LDTD113ZLT1G Featuring Monolithic Bias Resistors for Automotive Electronics

Key Attributes
Model Number: S-LDTD113ZLT1G
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
1kΩ
Resistor Ratio:
10
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
S-LDTD113ZLT1G
Package:
TO-236
Product Description

Product Overview

The LDTD113ZLT1G and S-LDTD113ZLT1G are NPN Silicon Surface Mount Transistors featuring a monolithic bias resistor network. These devices simplify circuit design by integrating built-in bias resistors, eliminating the need for external components. The thin-film resistors offer complete isolation for positive input biasing and minimize parasitic effects. Designed for ease of use, operation only requires setting on/off conditions. The S-prefix variants are AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with stringent control requirements. Key applications include inverters, interfaces, and drivers.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free.
  • Qualification (S-prefix): AEC-Q101 qualified and PPAP capable.

Technical Specifications

Model R1 (K) R2 (K) Shipping Device Marking
LDTD113ZLT1G 1 10 3000/Tape&Reel E8
S-LDTD113ZLT1G 1 10 3000/Tape&Reel E8
LDTD113ZLT3G 1 10 10000/Tape&Reel E8
Parameter Symbol Limits Unit
Collector-Emitter Voltage VCEO 50 V
Collector-Base Voltage VCBO 50 V
Collector Current IC 500 mA
Total Device Dissipation, FR-5 Board (Note 1) @ TA = 25C PD 225 mW
Derate above 25C 1.8 mW/C
Thermal Resistance, Junction-to-Ambient (Note 1) RJA 556 C/W
Junction and Storage temperature TJ,Tstg -55~+150 C
Collector-Emitter Breakdown Voltage (IC = 1 mA, IB = 0) VBR(CEO) 50 V
Collector-Base Breakdown Voltage (IC = 100 A, IE = 0) VBR(CBO) 50 V
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - 500 nA
Emitter-Base Cutoff Current (VEB = 5.0 V, IC = 0) IEBO - 7.2 mA
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - 1 A
DC Current Gain (IC = 50 mA, VCE = 5 V) HFE 82 -
Collector-Emitter Saturation Voltage (IC = 50 mA, IB = 2.5 mA) VCE(sat) - 0.3 V
Input Voltage (off) (VCE = 5.0 V, IC = 100 A) Vi(off) - 0.3 V
Input Voltage (on) (VCE = 0.3 V, IC = 20 mA) Vi(on) 1.5 V
Output Voltage (on) (VCC = 5.0 V, VB = 3 V, RL =1.0K) VOL - 0.3 V
Output Voltage (off) (VCC = 5.0 V, VB = 0.3 V, RL =1.0K) VOH 3 V
Input Resistor R1 0.7 - 1.3 K
Resistor Ratio R2/R1 8 - 12 -
OUTLINE AND DIMENSIONS (SOT23 (TO-236))
Parameter Symbol Min Nom Max
A1 0.01 0.06 0.1
A 0.89 1 1.11
b 0.37 0.44 0.5
c 0.09 0.13 0.18
D 2.80 2.9 3.04
E 1.20 1.3 1.4
e 1.78 1.9 2.04
HE 2.10 2.4 2.64
L 0.10 0.2 0.3
L1 0.35 0.54 0.69
0 --- 10

2410010201_LRC-S-LDTD113ZLT1G_C5383061.pdf

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