N Channel Enhancement Mode MOSFET 30V LRC LN2306LT1G with Ultra Low On Resistance SOT23 Package
Product Overview
The LN2306LT1G and S-LN2306LT1G are 30V N-Channel Enhancement-Mode MOSFETs designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. These devices are RoHS compliant and Halogen Free. The 'S-' prefix variants are qualified for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 standards and PPAP capability. They are suitable for various applications requiring efficient power management.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Automotive Qualification (S-prefix): AEC-Q101 qualified and PPAP capable
Technical Specifications
| Model | Description | VDS (V) | RDS(ON) @ VGS/ID (m) | ID (A) | VGS (V) | TJ, Tstg (C) | RJA (C/W) | Package | Marking | Shipping |
|---|---|---|---|---|---|---|---|---|---|---|
| LN2306LT1G | N-Channel Enhancement-Mode MOSFET | 30 | 38 (VGS@10V, IDS@5.8A) | 5.8 | 12 (Continuous) | -55 to +150 | 140 (1-in 2oz Cu PCB board) | SOT23 (TO-236) | N06 | 3000/Tape&Reel |
| S-LN2306LT1G | N-Channel Enhancement-Mode MOSFET | 30 | 38 (VGS@10V, IDS@5.8A) | 5.8 | 12 (Continuous) | -55 to +150 | 140 (1-in 2oz Cu PCB board) | SOT23 (TO-236) | N06 | 3000/Tape&Reel |
| LN2306LT3G | N-Channel Enhancement-Mode MOSFET | 30 | 43 (VGS@4.5V, IDS@5.0A) | 5.0 | 12 (Continuous) | -55 to +150 | 140 (1-in 2oz Cu PCB board) | SOT23 (TO-236) | N06 | 10000/Tape&Reel |
| 30 | 62 (VGS@2.5V, IDS@4.0A) | 4.0 | ||||||||
| Electrical Characteristics (Ta= 25C) | ||||||||||
| Parameter | Symbol | Unit | Limits (Min/Typ/Max) | |||||||
| DrainSource Breakdown Voltage | V(BR)DSS | Vdc | 30 | |||||||
| Zero Gate Voltage Drain Current | IDSS | Adc | 1 (VDS=9.6V, VGS=0V) | |||||||
| GateBody Leakage Current, Forward | IGSSF | nAdc | 100 (VDS = 0 V, VGS = 8 V) | |||||||
| GateBody Leakage Current, Reverse | IGSSR | nAdc | 100 (VDS = 0 V, VGS = -8 V) | |||||||
| Gate Threshold Voltage | VGS(th) | Vdc | 1.4 (VDS = VGS, ID = 250Adc) | |||||||
| Static DrainSource OnState Resistance | RDS(on) | m | 38 (VGS = 10 V, ID =5.8 A) | |||||||
| 43 (VGS = 4.5 V, ID =5 A) | ||||||||||
| 62 (VGS = 2.5 V, ID = 4 A) | ||||||||||
| Forward Transconductance | gfs | S | 10 (VDS = 5.0 V, ID = 5 A) | |||||||
| Input Capacitance | Ciss | pF | 513.51 (VGS = 0 V, f = 1.0MHz, VDS= 15 V) | |||||||
| Output Capacitance | Coss | pF | 80.85 (VGS = 0 V, f = 1.0MHz, VDS= 15 V) | |||||||
| Reverse Transfer Capacitance | Crss | pF | 34 (VGS = 0 V, f = 1.0MHz, VDS= 15 V) | |||||||
| Turn-On Delay Time | td(on) | ns | 6 (VDD = 15V, RL = 2.7 D = 1, VGEN = 10V,RG = 3 ) | |||||||
| Rise Time | tr | ns | 14 (VDD = 15V, RL = 2.7 D = 1, VGEN = 10V,RG = 3 ) | |||||||
| Turn-Off Delay Time | td(off) | ns | 7 (VDD = 15V, RL = 2.7 D = 1, VGEN = 10V,RG = 3 ) | |||||||
| Fall Time | tf | ns | 3 (VDD = 15V, RL = 2.7 D = 1, VGEN = 10V,RG = 3 ) | |||||||
| Forward Voltage | VSD | Vdc | 1.2 (VGS = 0 Vdc, ISD = 1 Adc) | |||||||
| Outline and Dimensions (mm) | ||||||||||
| Dimension | Min | Nom | Max | Dimension | Min | Nom | Max | |||
| A | 0.89 | 1.0 | 1.11 | L | 0.37 | 0.4 | 0.44 | |||
| A1 | 0.015 | 0.02 | 0.035 | L1 | 0.01 | 0.015 | 0.02 | |||
| b | 0.12 | 0.13 | 0.18 | e | 0.075 | 0.085 | 0.095 | |||
| c | 0.003 | 0.004 | 0.005 | HE | 2.10 | 2.35 | 2.60 | |||
| D | 2.80 | 2.90 | 3.04 | 0 | 10 | |||||
| E | 2.60 | 2.70 | 2.85 | |||||||
1809192032_LRC-LN2306LT1G_C78724.pdf
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