N Channel Enhancement Mode MOSFET 30V LRC LN2306LT1G with Ultra Low On Resistance SOT23 Package

Key Attributes
Model Number: LN2306LT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
38mΩ@10V,5.8A
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
54.87pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
513.51pF@15V
Pd - Power Dissipation:
1.4W
Mfr. Part #:
LN2306LT1G
Package:
SOT-23
Product Description

Product Overview

The LN2306LT1G and S-LN2306LT1G are 30V N-Channel Enhancement-Mode MOSFETs designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. These devices are RoHS compliant and Halogen Free. The 'S-' prefix variants are qualified for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 standards and PPAP capability. They are suitable for various applications requiring efficient power management.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Automotive Qualification (S-prefix): AEC-Q101 qualified and PPAP capable

Technical Specifications

Model Description VDS (V) RDS(ON) @ VGS/ID (m) ID (A) VGS (V) TJ, Tstg (C) RJA (C/W) Package Marking Shipping
LN2306LT1G N-Channel Enhancement-Mode MOSFET 30 38 (VGS@10V, IDS@5.8A) 5.8 12 (Continuous) -55 to +150 140 (1-in 2oz Cu PCB board) SOT23 (TO-236) N06 3000/Tape&Reel
S-LN2306LT1G N-Channel Enhancement-Mode MOSFET 30 38 (VGS@10V, IDS@5.8A) 5.8 12 (Continuous) -55 to +150 140 (1-in 2oz Cu PCB board) SOT23 (TO-236) N06 3000/Tape&Reel
LN2306LT3G N-Channel Enhancement-Mode MOSFET 30 43 (VGS@4.5V, IDS@5.0A) 5.0 12 (Continuous) -55 to +150 140 (1-in 2oz Cu PCB board) SOT23 (TO-236) N06 10000/Tape&Reel
30 62 (VGS@2.5V, IDS@4.0A) 4.0
Electrical Characteristics (Ta= 25C)
Parameter Symbol Unit Limits (Min/Typ/Max)
DrainSource Breakdown Voltage V(BR)DSS Vdc 30
Zero Gate Voltage Drain Current IDSS Adc 1 (VDS=9.6V, VGS=0V)
GateBody Leakage Current, Forward IGSSF nAdc 100 (VDS = 0 V, VGS = 8 V)
GateBody Leakage Current, Reverse IGSSR nAdc 100 (VDS = 0 V, VGS = -8 V)
Gate Threshold Voltage VGS(th) Vdc 1.4 (VDS = VGS, ID = 250Adc)
Static DrainSource OnState Resistance RDS(on) m 38 (VGS = 10 V, ID =5.8 A)
43 (VGS = 4.5 V, ID =5 A)
62 (VGS = 2.5 V, ID = 4 A)
Forward Transconductance gfs S 10 (VDS = 5.0 V, ID = 5 A)
Input Capacitance Ciss pF 513.51 (VGS = 0 V, f = 1.0MHz, VDS= 15 V)
Output Capacitance Coss pF 80.85 (VGS = 0 V, f = 1.0MHz, VDS= 15 V)
Reverse Transfer Capacitance Crss pF 34 (VGS = 0 V, f = 1.0MHz, VDS= 15 V)
Turn-On Delay Time td(on) ns 6 (VDD = 15V, RL = 2.7 D = 1, VGEN = 10V,RG = 3 )
Rise Time tr ns 14 (VDD = 15V, RL = 2.7 D = 1, VGEN = 10V,RG = 3 )
Turn-Off Delay Time td(off) ns 7 (VDD = 15V, RL = 2.7 D = 1, VGEN = 10V,RG = 3 )
Fall Time tf ns 3 (VDD = 15V, RL = 2.7 D = 1, VGEN = 10V,RG = 3 )
Forward Voltage VSD Vdc 1.2 (VGS = 0 Vdc, ISD = 1 Adc)
Outline and Dimensions (mm)
Dimension Min Nom Max Dimension Min Nom Max
A 0.89 1.0 1.11 L 0.37 0.4 0.44
A1 0.015 0.02 0.035 L1 0.01 0.015 0.02
b 0.12 0.13 0.18 e 0.075 0.085 0.095
c 0.003 0.004 0.005 HE 2.10 2.35 2.60
D 2.80 2.90 3.04 0 10
E 2.60 2.70 2.85

1809192032_LRC-LN2306LT1G_C78724.pdf

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