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quality NPN Surface Mount Transistor with Monolithic Bias Resistor Network LRC LMUN5213T1G SC70 SOT323 Package factory
quality NPN Surface Mount Transistor with Monolithic Bias Resistor Network LRC LMUN5213T1G SC70 SOT323 Package factory

NPN Surface Mount Transistor with Monolithic Bias Resistor Network LRC LMUN5213T1G SC70 SOT323 Package

Key Attributes
Model Number: LMUN5213T1G
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
47kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN5213T1G
Package:
SC-70
Product Description

Product Overview

The LMUN5213T1G and S-LMUN5213T1G are NPN Silicon Surface Mount Transistors featuring a monolithic bias resistor network. These devices simplify circuit design, reduce board space, and lower component count. The SC-70/SOT-323 package is compatible with wave or reflow soldering, and the modified gull-winged leads absorb thermal stress to prevent die damage. The S-prefix variant is qualified for automotive applications (AEC-Q101) and PPAP capable, offering unique site and control change requirements. Both product variants comply with RoHS requirements and are Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Package Type: SC-70/SOT-323
  • Transistor Type: NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
  • Certifications (S-prefix): AEC-Q101 qualified, PPAP capable

Technical Specifications

Parameter Symbol Limits Unit Typical Maximum
MAXIMUM RATINGS (Ta = 25C)
CollectorBase Voltage VCBO 50 V - -
CollectorEmitter Voltage VCEO 50 V - -
Collector Current Continuous IC 100 mA - -
Total Device Dissipation, FR5 Board (Note 1) @ TA = 25C PD 618 mW - -
Derate above 25C 1.6 mW/C - -
Thermal Resistance, JunctiontoAmbient (Note 1) RJA - C/W - -
Junction and Storage temperature TJ,Tstg -55+150 C - -
ELECTRICAL CHARACTERISTICS (Ta= 25C)
CollectorEmitter Breakdown Voltage (IC = 2.0 mA, IB = 0) VBR(CEO) 50 V - -
CollectorBase Breakdown Voltage (IC = 10 A, IE = 0) VBR(CBO) 50 V - -
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - nA - 100
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - nA - 500
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - mA - 0.1
DC Current Gain (IC = 5.0 mA, VCE = 10 V) HFE - - 320 -
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) - V 0.25 -
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL =1.0K) VOL - V 0.2 -
Output Voltage (on) (VCC = 5.0 V, VB = 0.5 V, RL =1.0K) VOH - V 4.9 -
Input Resistor R1 - K 47 -
Resistor Ratio R1/R2 - - 1 -
Device Marking 8C - -
Shipping (LMUN5213T1G) 3000/Tape&Reel - -
Shipping (LMUN5213T3G) 10000/Tape&Reel - -
OUTLINE AND DIMENSIONS (SC70)
Dimension Symbol Min Nor Max Unit
A 0.80 0.95 1.00 mm
A1 0.00 0.05 0.10 mm
A2 0.7 - - REF
b 0.30 0.35 0.40 mm
c 0.10 0.15 0.25 mm
D 1.80 2.05 2.20 mm
E 1.15 1.30 1.35 mm
He 2.00 2.10 2.40 mm
e 1.20 1.30 1.40 BSC
e1 0.20 0.35 0.56 mm
L 0.65 - - BSC
X 0.70 - - -
Y 0.90 - - -

Note 1: FR5 @ Minimum Pad.

Note 2: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%


1912111437_LRC-LMUN5213T1G_C417295.pdf

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