Low On Resistance 60V N Channel Enhancement Mode MOSFET LRC LN2308LT1G for Battery Powered Equipment
Key Attributes
Model Number:
LN2308LT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2.6A
RDS(on):
130mΩ@4.5V,2.1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
12pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
350pF@30V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
LN2308LT1G
Package:
SOT-23
Product Description
Product Overview
The LN2308LT1G is a 60V N-Channel Enhancement-Mode MOSFET designed for efficient power management. It features an extremely low on-resistance (RDS(ON) 100m@VGS =10V) due to its super high density cell design, offering exceptional on-resistance and maximum DC current capability. This MOSFET is RoHS compliant and Halogen Free, making it suitable for various applications including power management in notebooks, portable equipment, battery-powered systems, load switches, and DSCs.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Device Type: N-Channel Enhancement-Mode MOSFET
- Model Number: LN2308LT1G
Technical Specifications
| Parameter | Symbol | Limits | Unit | Notes |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tj=150) TA =25 | ID | 2.6 | A | |
| Continuous Drain Current (Tj=150) TA =70 | ID | 1.8 | A | |
| Pulsed Drain Current | IDM | 8 | A | T10 sec |
| Maximum Body-Diode Continuous Current | IS | 1.6 | A | |
| Maximum Power Dissipation TA =25 | PD | 0.7 | W | |
| Maximum Power Dissipation TA =70 | PD | 0.45 | W | |
| Operating Junction Temperature | TJ | 150 | Steady State | |
| Thermal Resistance-Junction to Case | RJC | 120 | /W | The device mounted on 1in FR4 board with 2 oz copper |
| Maximum Junction-to-Ambient | RJA | 150 | /W | |
| DrainSource Breakdown Voltage (VGS = 0, ID = 250A) | V(BR)DSS | 60 | V | |
| Gate Threshold Voltage (VDS = VGS, ID = 250A) | VGS(th) | 1.0 - 3.0 | V | |
| Gate Body Leakage (VDS =0V, VGS =20V) | IGSS | 100 | nA | |
| Zero Gate Voltage Drain Current (VDS =60V, VGS =0V) | IDSS | 1 | A | |
| Drain-Source On-Resistance (VGS =10V, ID = 2.6A) | RDS(on) | 82 - 100 | m | |
| Drain-Source On-Resistance (VGS =4.5V, ID = 2.1A) | RDS(on) | 96 - 130 | m | |
| Diode Forward Voltage (IS =1.0A, VGS =0V) | VSD | 0.8 - 1.2 | V | |
| Total Gate Charge (VDS =30V, VGS =10V, ID =2.6A) | Qg | 6.5 | nC | |
| Gate-Source Charge | Qgs | 2.2 | nC | |
| Gate-Drain Charge | Qgd | 2.7 | nC | |
| Input capacitance | Ciss | 350 | pF | (VDS =30V, VGS =0V, f=1MHz) |
| Output Capacitance | Coss | 40 | pF | (VDS =30V, VGS =4.5V, ID =2.6A) |
| Reverse Transfer Capacitance | Crss | 12 | pF | |
| Gate Resistance | Rg | 0.7 | (VDS =0V, VGS =0V, f=1MHz) | |
| Turn-On Delay Time | td(on) | 10 | ns | (VDD =20V, RL =20,ID =1A, VGEN =10V,RG =1) Pulse test; pulse width300s, duty cycle2%. |
| Turn-On Rise Time | tr | 11 | ns | |
| Turn-Off Delay Time | td(off) | 29 | ns | |
| Turn-Off Fall Time | tf | 3 | ns | |
| Device Marking | N08 | |||
| Shipping (Tape&Reel) | 10000 | /Tape&Reel | LN2308LT3G | |
| Shipping (Tape&Reel) | 3000 | /Tape&Reel | LN2308LT1G | |
| Package | SOT23(TO-236) |
2410010231_LRC-LN2308LT1G_C83150.pdf
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