50 Volt N Channel Power MOSFET LBSS138WT1G Low Threshold Voltage 200 Milliamp Halogen Free Device
Product Overview
The LBSS138WT1G and S-LBSS138WT1G are N-Channel Power MOSFETs designed for low voltage applications. The S-prefix variants are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications with stringent site and control change requirements. These devices offer a low threshold voltage (VGS(th): 0.5V to 1.5V) and compliance with RoHS and Halogen Free requirements.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Type: Power MOSFET
- Channel Type: N-Channel
- Compliance: RoHS, Halogen Free
- Automotive Qualification: AEC-Q101 qualified and PPAP capable (S-prefix models)
- Package Type: SC-70 (SOT-323)
Technical Specifications
| Model | Description | VDS (Vdc) | ID (mAdc) | VGS(th) (V) | RDS(on) (Ohms) | Package | Marking | Order Information |
|---|---|---|---|---|---|---|---|---|
| LBSS138WT1G | Power MOSFET | 50 | 200 | 0.5 - 1.5 | 3.5 (Typ. @ VGS=2.75V, ID<200mA), 5.0 (Max. @ VGS=5.0V, ID=200mA) | SC-70 (SOT-323) | J1 | 3000/Tape&Reel |
| S-LBSS138WT1G | Power MOSFET (Automotive) | 50 | 200 | 0.5 - 1.5 | 3.5 (Typ. @ VGS=2.75V, ID<200mA), 5.0 (Max. @ VGS=5.0V, ID=200mA) | SC-70 (SOT-323) | J1 | 10000/Tape&Reel |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VBRDSS | 50 | - | - | Vdc | VGS = 0, ID = 250Adc |
| Zero Gate Voltage Drain Current | IDSS | - | - | 0.1 | Adc | VGS = 0, VDS = 25 Vdc |
| Zero Gate Voltage Drain Current | IDSS | - | - | 0.5 | Adc | VGS = 0, VDS = 50 Vdc |
| GatetoSource Voltage Continuous | VGS | - | - | 20 | Vdc | - |
| GateBody Leakage Current, Forward | IGSSF | - | - | 0.1 | Adc | VGS = 20 Vdc |
| GateBody Leakage Current, Reverse | IGSSR | - | - | -0.1 | Adc | VGS = - 20 Vdc |
| Forward Transconductance | gfs | - | 100 | - | mS | VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz |
| Input Capacitance | Ciss | - | 40 | 50 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz |
| Output Capacitance | Coss | - | 12 | 25 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz |
| Reverse Transfer Capacitance | Crss | - | 3.5 | 5.0 | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz |
| Turn-On Delay Time | td(on) | - | - | 20 | ns | VDD = 30 Vdc , ID =200 mAdc |
| Turn-Off Delay Time | td(off) | - | - | 20 | ns | VDD = 30 Vdc , ID =200 mAdc |
| Parameter | Symbol | Limit | Unit | Conditions |
|---|---|---|---|---|
| Total Device Dissipation | PD | 150 | mW | FR-5 Board (Note 1) @ TA = 25C |
| Thermal Resistance, JunctiontoAmbient | RJA | 556 | C/W | FR-5 Board (Note 1) |
| Junction and Storage temperature | TJ,Tstg | -55+150 | C | - |
| Maximum Lead Temperature for Soldering | TL | 260 | C | for 10 seconds |
| Continuous Drain Current | ID | 200 | mAmps | TA = 25C |
| Pulsed Drain Current | IDM | 800 | mAmps | Pulsed (tp10s) |
| Dimension | Unit | Min. | Nom. | Max. |
|---|---|---|---|---|
| A | mm | 0.80 | 0.90 | 1.00 |
| A1 | mm | 0.00 | 0.05 | 0.10 |
| b | mm | 0.35 | 0.40 | 0.56 |
| c | mm | 0.09 | 0.12 | 0.15 |
| D | mm | 2.10 | 2.20 | 2.40 |
| E | mm | 1.80 | - | - |
| e | mm | 0.70 (REF) | - | - |
| e1 | mm | 0.65 (REF) | - | - |
| HE | mm | 1.15 | 1.24 | 1.35 |
| L | mm | 0.30 | 0.38 | 0.56 |
| Dimension | Unit | Min. | Nom. | Max. |
|---|---|---|---|---|
| A | inches | 0.032 | 0.035 | 0.039 |
| A1 | inches | 0.000 | 0.002 | 0.004 |
| b | inches | 0.014 | 0.016 | 0.022 |
| c | inches | 0.004 | 0.005 | 0.006 |
| D | inches | 0.083 | 0.087 | 0.095 |
| E | inches | 0.071 | - | - |
| e | inches | 0.028 (REF) | - | - |
| e1 | inches | 0.026 (REF) | - | - |
| HE | inches | 0.045 | 0.049 | 0.053 |
| L | inches | 0.012 | 0.015 | 0.022 |
1912111437_LRC-LBSS138WT1G_C383201.pdf
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