50 Volt N Channel Power MOSFET LBSS138WT1G Low Threshold Voltage 200 Milliamp Halogen Free Device

Key Attributes
Model Number: LBSS138WT1G
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
10Ω@2.75V
Gate Threshold Voltage (Vgs(th)):
1.5V@1.0mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
LBSS138WT1G
Package:
SC-70
Product Description

Product Overview

The LBSS138WT1G and S-LBSS138WT1G are N-Channel Power MOSFETs designed for low voltage applications. The S-prefix variants are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications with stringent site and control change requirements. These devices offer a low threshold voltage (VGS(th): 0.5V to 1.5V) and compliance with RoHS and Halogen Free requirements.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Product Type: Power MOSFET
  • Channel Type: N-Channel
  • Compliance: RoHS, Halogen Free
  • Automotive Qualification: AEC-Q101 qualified and PPAP capable (S-prefix models)
  • Package Type: SC-70 (SOT-323)

Technical Specifications

Model Description VDS (Vdc) ID (mAdc) VGS(th) (V) RDS(on) (Ohms) Package Marking Order Information
LBSS138WT1G Power MOSFET 50 200 0.5 - 1.5 3.5 (Typ. @ VGS=2.75V, ID<200mA), 5.0 (Max. @ VGS=5.0V, ID=200mA) SC-70 (SOT-323) J1 3000/Tape&Reel
S-LBSS138WT1G Power MOSFET (Automotive) 50 200 0.5 - 1.5 3.5 (Typ. @ VGS=2.75V, ID<200mA), 5.0 (Max. @ VGS=5.0V, ID=200mA) SC-70 (SOT-323) J1 10000/Tape&Reel
Parameter Symbol Min. Typ. Max. Unit Conditions
Drain-Source Breakdown Voltage VBRDSS 50 - - Vdc VGS = 0, ID = 250Adc
Zero Gate Voltage Drain Current IDSS - - 0.1 Adc VGS = 0, VDS = 25 Vdc
Zero Gate Voltage Drain Current IDSS - - 0.5 Adc VGS = 0, VDS = 50 Vdc
GatetoSource Voltage Continuous VGS - - 20 Vdc -
GateBody Leakage Current, Forward IGSSF - - 0.1 Adc VGS = 20 Vdc
GateBody Leakage Current, Reverse IGSSR - - -0.1 Adc VGS = - 20 Vdc
Forward Transconductance gfs - 100 - mS VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz
Input Capacitance Ciss - 40 50 pF VDS = 25 Vdc, VGS = 0, f = 1.0 MHz
Output Capacitance Coss - 12 25 pF VDS = 25 Vdc, VGS = 0, f = 1.0 MHz
Reverse Transfer Capacitance Crss - 3.5 5.0 pF VDS = 25 Vdc, VGS = 0, f = 1.0 MHz
Turn-On Delay Time td(on) - - 20 ns VDD = 30 Vdc , ID =200 mAdc
Turn-Off Delay Time td(off) - - 20 ns VDD = 30 Vdc , ID =200 mAdc
Parameter Symbol Limit Unit Conditions
Total Device Dissipation PD 150 mW FR-5 Board (Note 1) @ TA = 25C
Thermal Resistance, JunctiontoAmbient RJA 556 C/W FR-5 Board (Note 1)
Junction and Storage temperature TJ,Tstg -55+150 C -
Maximum Lead Temperature for Soldering TL 260 C for 10 seconds
Continuous Drain Current ID 200 mAmps TA = 25C
Pulsed Drain Current IDM 800 mAmps Pulsed (tp10s)
Dimension Unit Min. Nom. Max.
A mm 0.80 0.90 1.00
A1 mm 0.00 0.05 0.10
b mm 0.35 0.40 0.56
c mm 0.09 0.12 0.15
D mm 2.10 2.20 2.40
E mm 1.80 - -
e mm 0.70 (REF) - -
e1 mm 0.65 (REF) - -
HE mm 1.15 1.24 1.35
L mm 0.30 0.38 0.56
Dimension Unit Min. Nom. Max.
A inches 0.032 0.035 0.039
A1 inches 0.000 0.002 0.004
b inches 0.014 0.016 0.022
c inches 0.004 0.005 0.006
D inches 0.083 0.087 0.095
E inches 0.071 - -
e inches 0.028 (REF) - -
e1 inches 0.026 (REF) - -
HE inches 0.045 0.049 0.053
L inches 0.012 0.015 0.022

1912111437_LRC-LBSS138WT1G_C383201.pdf

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