LRC S LMUN5211DW1T1G NPN Silicon Dual Bias Resistor Transistors in SC88 SOT363 Package for Surface Mount

Key Attributes
Model Number: S-LMUN5211DW1T1G
Product Custom Attributes
Emitter-Base Voltage VEBO:
6V
Output Voltage(VO(on)):
200mV
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
S-LMUN5211DW1T1G
Package:
SC-88(SOT-363)
Product Description

Product Overview

The LESHAN RADIO COMPANY, LTD. LMUN5211DW1T1G Series features Dual Bias Resistor Transistors (BRT) in an SC-88/SOT-363 surface mount package. These NPN silicon transistors integrate monolithic bias resistor networks, comprising a series base resistor and a base-emitter resistor, to simplify circuit design, reduce board space, and decrease component count. Each BRT device replaces a single transistor and its external bias network. The SOT-363 package is ideal for low-power surface mount applications where space is limited. The S- prefix denotes automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability. These devices are RoHS compliant.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Package Type: SC-88/SOT-363
  • Transistor Type: NPN Silicon
  • Configuration: Dual Bias Resistor Transistors (BRT)
  • Certifications: AEC-Q101 Qualified (S- prefix models)
  • Compliance: RoHS

Technical Specifications

Model Marking R1 (K) R2 (K) Vin (V) Shipping
LMUN5211DW1T1G 7A 10 10 -10~+12 3000/Tape&Reel
LMUN5211DW1T3G 7A 10 10 -10~+12 10000/Tape&Reel
LMUN5212DW1T1G 7H 2.2 - -10~+40 3000/Tape&Reel
LMUN5212DW1T3G 7H 2.2 - -10~+40 10000/Tape&Reel
LMUN5213DW1T1G 7J 4.7 4.7 -10~+40 3000/Tape&Reel
LMUN5213DW1T3G 7J 4.7 4.7 -10~+40 10000/Tape&Reel
LMUN5214DW1T1G 7B 22 22 -6~+40 3000/Tape&Reel
LMUN5214DW1T3G 7B 22 22 -6~+40 10000/Tape&Reel
LMUN5215DW1T1G 7C 47 47 -6~+30 3000/Tape&Reel
LMUN5215DW1T3G 7C 47 47 -6~+30 10000/Tape&Reel
LMUN5216DW1T1G 7D 10 47 -10~+10 3000/Tape&Reel
LMUN5216DW1T3G 7D 10 47 -10~+10 10000/Tape&Reel
LMUN5230DW1T1G 7E 10 - -10~+30 3000/Tape&Reel
LMUN5230DW1T3G 7E 10 - -10~+30 10000/Tape&Reel
LMUN5231DW1T1G 7F 4.7 - -5~+30 3000/Tape&Reel
LMUN5231DW1T3G 7F 4.7 - -5~+30 10000/Tape&Reel
LMUN5232DW1T1G 7G 1.0 - -8~+40 3000/Tape&Reel
LMUN5232DW1T3G 7G 1.0 - -8~+40 10000/Tape&Reel
LMUN5233DW1T1G 7K 4.7 47 -10~+40 3000/Tape&Reel
LMUN5233DW1T3G 7K 4.7 47 -10~+40 10000/Tape&Reel
LMUN5234DW1T1G 7L 22 47 -10~+40 3000/Tape&Reel
LMUN5234DW1T3G 7L 22 47 -10~+40 10000/Tape&Reel
LMUN5235DW1T1G 7M 2.2 47 -6~+12 3000/Tape&Reel
LMUN5235DW1T3G 7M 2.2 47 -6~+12 10000/Tape&Reel
LMUN5236DW1T1G 7P 47 22 -10~+40 3000/Tape&Reel
LMUN5236DW1T3G 7P 47 22 -10~+40 10000/Tape&Reel
LMUN5237DW1T1G 7N 100 100 -10~+40 3000/Tape&Reel
LMUN5237DW1T3G 7N 100 100 -10~+40 10000/Tape&Reel
Maximum Ratings (TA = 25C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
Emitter-Base Breakdown Voltage VEBO 6 Vdc
Thermal Characteristics (TA = 25C unless otherwise noted)
Characteristic Symbol Max Unit
Total Device Dissipation (One Junction Heated, FR-4 @ Minimum Pad) PD 187 mW
Derate above 25C (One Junction Heated, FR-4 @ Minimum Pad) - 1.5 mW/C
Thermal Resistance Junction-to-Ambient (One Junction Heated, FR-4 @ Minimum Pad) RJA 670 C/W
Total Device Dissipation (One Junction Heated, FR-4 @ 1.0 x 1.0 inch Pad) PD 250 mW
Derate above 25C (One Junction Heated, FR-4 @ 1.0 x 1.0 inch Pad) - 2.0 mW/C
Thermal Resistance Junction-to-Ambient (One Junction Heated, FR-4 @ 1.0 x 1.0 inch Pad) RJA 490 C/W
Total Device Dissipation (Both Junctions Heated, FR-4 @ Minimum Pad) PD 250 mW
Derate above 25C (Both Junctions Heated, FR-4 @ Minimum Pad) - 2.0 mW/C
Thermal Resistance Junction-to-Ambient (Both Junctions Heated, FR-4 @ Minimum Pad) RJA 493 C/W
Total Device Dissipation (Both Junctions Heated, FR-4 @ 1.0 x 1.0 inch Pad) PD 385 mW
Derate above 25C (Both Junctions Heated, FR-4 @ 1.0 x 1.0 inch Pad) - 3.0 mW/C
Thermal Resistance Junction-to-Ambient (Both Junctions Heated, FR-4 @ 1.0 x 1.0 inch Pad) RJA 325 C/W
Thermal Resistance Junction-to-Lead (FR-4 @ Minimum Pad) RJL 188 C/W
Thermal Resistance Junction-to-Lead (FR-4 @ 1.0 x 1.0 inch Pad) RJL 208 C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 C
Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO 500 nAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 Vdc
Emitter-Base Breakdown Voltage (IE = 200 A, IC = 0) V(BR)EBO 6 Vdc
DC Current Gain (Note 4) (VCE = 10 V, IC = 5.0 mA) hFE (See Table) (See Table)
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 5 mA) VCE(sat) 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) VCE(sat) 0.25 Vdc
Output Voltage (on) (Note 4) VOL 0.2 Vdc
Output Voltage (off) (Note 5) VOH 4.9 Vdc
Input Resistor R1 (See Table) (See Table) (See Table) k
Resistor Ratio R1/R2 (See Table) (See Table) (See Table)

Notes:

  • Note 1: FR-4 @ Minimum Pad
  • Note 2: FR-4 @ 1.0 x 1.0 inch Pad
  • Note 3: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
  • Note 4: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
  • Note 5: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

2206071616_LRC-S-LMUN5211DW1T1G_C2932892.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.