PNP Silicon Bias Resistor Transistor LRC LMUN5112T1G SC70 Package Monolithic Bias Network Included

Key Attributes
Model Number: LMUN5112T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
22kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN5112T1G
Package:
SC-70(SOT323)
Product Description

Product Overview

The LMUN5111T1G Series and S-LMUN5111T1G Series are PNP Silicon Bias Resistor Transistors (BRTs) designed to replace single transistors and their external resistor bias networks. These devices integrate a single transistor with a monolithic bias network, comprising a series base resistor and a base-emitter resistor, thereby reducing component count, system cost, and board space. Housed in the SC-70/SOT-323 package, they are suitable for low-power surface mount applications and can be soldered using wave or reflow methods. The modified gull-winged leads offer protection against thermal stress during soldering.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material: Silicon
  • Package Type: SC323 (SC70)
  • Lead Type: Modified gull-winged leads
  • Compliance: RoHS requirements
  • Automotive Option: S- Prefix for AEC-Q101 Qualified and PPAP Capable applications

Technical Specifications

Model Series Package Device Marking R1 (k) R2 (k) Shipping Quantity
LMUN5111T1G SC70/SOT323 6A 10 10 3000/Tape & Reel
LMUN5112T1G SC70/SOT323 6B 22 22 3000/Tape & Reel
LMUN5113T1G SC70/SOT323 P5 47 47 3000/Tape & Reel
LMUN5114T1G SC70/SOT323 6D 10 47 3000/Tape & Reel
LMUN5115T1G SC70/SOT323 6E 10 3000/Tape & Reel
LMUN5116T1G SC70/SOT323 6F 4.7 3000/Tape & Reel
LMUN5130T1G SC70/SOT323 6G 1.0 1.0 3000/Tape & Reel
LMUN5131T1G SC70/SOT323 6H 2.2 2.2 3000/Tape & Reel
LMUN5132T1G SC70/SOT323 6J 4.7 4.7 3000/Tape & Reel
LMUN5133T1G SC70/SOT323 6K 4.7 47 3000/Tape & Reel
LMUN5134T1G SC70/SOT323 6L 22 47 3000/Tape & Reel
LMUN5135T1G SC70/SOT323 6M 2.2 47 3000/Tape & Reel
LMUN5136T1G SC70/SOT323 6N 100 100 3000/Tape & Reel
LMUN5137T1G SC70/SOT323 6P 47 22 3000/Tape & Reel
S-LMUN5111T1G SC70/SOT323 (Refer to device datasheet) (Refer to device datasheet) (Refer to device datasheet) (Refer to device datasheet)
S-LMUN5111T3G SC70/SOT323 (Refer to device datasheet) (Refer to device datasheet) (Refer to device datasheet) 10000/Tape & Reel
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
Total Device Dissipation (TA = 25C, Note 1) PD 202 mW
Total Device Dissipation (TA = 25C, Note 2) PD 310 mW
Derate above 25C (Note 1) 1.6 C/W
Derate above 25C (Note 2) 2.5 C/W
Junction-to-Ambient Thermal Resistance (Note 1) RJA 618 C/W
Junction-to-Ambient Thermal Resistance (Note 2) RJA 403 C/W
Junction-to-Lead Thermal Resistance (Note 1) RJL 280 C/W
Junction-to-Lead Thermal Resistance (Note 2) RJL 332 C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 C
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 Vdc
Collector-Emitter Breakdown Voltage (Note 4, IC = 2.0 mA, IB = 0) V(BR)CEO 50 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) VCE(sat) 0.25 Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) VOL 0.2 Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) VOH 4.9 Vdc
Input Resistor R1 (Typ. values for various models) R1 (See Ordering Information Table) k
Resistor Ratio R1/R2 (Typ. values for various models) R1/R2 (See Ordering Information Table)

Notes:
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%


2410010403_LRC-LMUN5112T1G_C723988.pdf

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