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quality Surface Mount NPN Transistor with Integrated Bias Resistor Network LRC LDTC114EET1G AEC Q101 Qualified factory
quality Surface Mount NPN Transistor with Integrated Bias Resistor Network LRC LDTC114EET1G AEC Q101 Qualified factory

Surface Mount NPN Transistor with Integrated Bias Resistor Network LRC LDTC114EET1G AEC Q101 Qualified

Key Attributes
Model Number: LDTC114EET1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
13kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LDTC114EET1G
Package:
SC-89
Product Description

Product Overview

This NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network offers simplified circuit design by reducing board space and component count. It is compliant with RoHS requirements and Halogen Free. The 'S-' prefix variants are designed for automotive and other applications requiring unique site and control change requirements, and are AEC-Q101 qualified and PPAP capable. Ideal for various electronic applications where integrated bias resistors are beneficial.

Product Attributes

  • Material Compliance: RoHS requirements and Halogen Free.
  • Qualification: AEC-Q101 qualified (S- prefix variants)
  • PPAP Capable: Yes (S- prefix variants)
  • Origin: Leshan Radio Company, LTD.

Technical Specifications

Model Device Marking Bias Resistor (R1/R2) Shipping Collector Current - Continuous (IC) Collector-Emitter Voltage (VCEO) Collector-Base Voltage (VCBO) Total Device Dissipation (PD) @ TA = 25C (FR-5 Board) Derate above 25C Thermal Resistance, Junction-to-Ambient (RJA) Junction and Storage Temperature (TJ, Tstg) Collector Current Cutoff (ICEO) Collector-Base Cutoff Current (ICBO) Emitter-Base Cutoff Current (IEBO) Collector-Emitter Breakdown Voltage (VBR(CEO)) Collector-Base Breakdown Voltage (VBR(CBO)) DC Current Gain (HFE) Collector-Emitter Saturation Voltage (VCE(sat)) Input Resistor (R1) Resistor Ratio (R1/R2) Output Voltage (on) (VCC=5.0V, VB=2.5V, RL=1.0K) Output Voltage (on) (VCC=5.0V, VB=0.5V, RL=1.0K)
LDTC114EET1G LDTC114EET1G 10K / 10K 3000/Tape&Reel 100 mAdc 50 Vdc 50 Vdc 600 mW 1.6 mW/C -55 to +150 C 500 nA 100 nA 500 nA 50 V 50 V 35 - 60 0.25 V 7 K 0.8 - 1.2 0.2 V 0.2 V
S-LDTC114EET1G S-LDTC114EET1G 10K / 10K 3000/Tape&Reel 100 mAdc 50 Vdc 50 Vdc 600 mW 1.6 mW/C -55 to +150 C 500 nA 100 nA 500 nA 50 V 50 V 35 - 60 0.25 V 7 K 0.8 - 1.2 0.2 V 0.2 V
LDTC114EET3G 8A 10K / 10K 10000/Tape&Reel 100 mAdc 50 Vdc 50 Vdc 600 mW 1.6 mW/C -55 to +150 C 500 nA 100 nA 500 nA 50 V 50 V 35 - 60 0.25 V 7 K 0.8 - 1.2 0.2 V 0.2 V

Outline and Dimensions (SC89 Package)

Symbol Dimension Unit
A 1.50 - 1.70 mm (0.059 - 0.067 in)
B 0.75 - 0.95 mm (0.030 - 0.037 in)
C 0.23 - 0.33 mm (0.009 - 0.013 in)
D 0.60 - 0.80 mm (0.024 - 0.031 in)
G 0.50 BSC (0.020 BSC)
H 0.53 REF (0.021 REF)
J 0.10 - 0.20 mm (0.004 - 0.008 in)
K 0.30 - 0.50 mm (0.012 - 0.020 in)
L 1.10 REF (0.043 REF)
M 1.50 - 1.70 mm (0.059 - 0.067 in)
S 0.063 - 0.067 (0.002 - 0.003 in)

Soldering Footprint

Refer to application note for specific recommendations.


1808291248_LRC-LDTC114EET1G_C172398.pdf

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