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quality N Channel Power MOSFET LRC LBSS139WT1G Offering Low Threshold Voltage and High ESD Protection Level factory
quality N Channel Power MOSFET LRC LBSS139WT1G Offering Low Threshold Voltage and High ESD Protection Level factory

N Channel Power MOSFET LRC LBSS139WT1G Offering Low Threshold Voltage and High ESD Protection Level

Key Attributes
Model Number: LBSS139WT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
200mA
RDS(on):
3.5Ω@5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@1.0mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.9pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
22.8pF@25V
Pd - Power Dissipation:
150mW
Mfr. Part #:
LBSS139WT1G
Package:
SC-70
Product Description

Product Overview

The LBSS139WT1G and S-LBSS139WT1G are N-Channel Power MOSFETs designed for automotive and general applications requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable. Featuring a low threshold voltage (VGS(th): 0.5V - 1.5V), they are ideal for low-voltage applications. The MOSFETs offer ESD protection up to 1500V and are RoHS compliant and Halogen Free. They are supplied in a SC-70 (SOT-323) package.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Product Family: Power MOSFET
  • Channel Type: N-Channel
  • Material Compliance: RoHS and Halogen Free
  • Automotive Qualification: AEC-Q101 qualified, PPAP capable (for S- prefix models)
  • Moisture Sensitivity Level (MSL): Level 1
  • Package Type: SC-70 (SOT-323)
  • ESD Protection: 1500V

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Notes
Maximum Ratings (Ta = 25C)
Drain-Source Voltage VDSS 60 V
Continuous Drain Current ID 200 mA TA = 25C
Pulsed Drain Current IDM 800 mA tp 10s
Gate-to-Source Voltage Continuous VGS 20 V
Thermal Characteristics
Total Device Dissipation PD 1.2 mW FR-4 Board (Note 1) @ TA = 25C
Derate above 25C 1.0 mW/C
Thermal Resistance, Junction-to-Ambient RJA 833 C/W Note 1
Junction and Storage Temperature TJ, Tstg -55 150 C
Maximum Lead Temperature for Soldering TL 260 C for 10 seconds
Electrical Characteristics (Ta = 25C, unless otherwise noted)
Drain-Source Breakdown Voltage VBRDSS 60 V VGS = 0, ID = 250A
Zero Gate Voltage Drain Current IDSS 1.5 10 A VGS = 0, VDS = 50 V
Gate-Body Leakage Current, Forward IGSSF 0.1 A VGS = 20 V
Gate-Body Leakage Current, Reverse IGSSR -10 A VGS = -20 V
Gate Threshold Voltage VGS(th) 0.5 1.5 V VDS = VGS, ID = 1.0mA
Static Drain-Source On-State Resistance RDS(on) 5.6 Ohms VGS = 2.75 V, ID < 200 mA
Static Drain-Source On-State Resistance RDS(on) 3.5 Ohms VGS = 5.0 V, ID = 200 mA
Forward Transconductance gfs 100 mS VDS = 25 V, ID = 200 mA, f = 1.0 MHz
Input Capacitance Ciss 22.8 pF VDS = 25 V, VGS = 0, f = 1.0 MHz
Output Capacitance Coss 3.5 pF VDS = 25 V, VGS = 0, f = 1.0 MHz
Reverse Transfer Capacitance Crss 2.9 pF VDS = 25 V, VGS = 0, f = 1.0 MHz
Switching Characteristics (VDD = 30 V , VGEN = 10 V, RG =25 ,RL =60 ,ID =500 mA)
Turn-On Delay Time td(on) 3.8 ns 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Turn-Off Delay Time td(off) 19 ns 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Source-Drain Diode Characteristics
Forward Voltage VSD 1.3 V IS=0.5A, VGS=0V
Device Marking and Ordering Information
Model Marking Shipping
LBSS139WT1G J2 3000/Tape&Reel
S-LBSS139WT1G J2 10000/Tape&Reel
Outline and Dimensions (SC70)
Dimension MIN NOR MAX REF Unit
A 0.80 0.95 1.00 mm
A1 0.00 0.05 0.10 mm
b 0.30 0.35 0.40 mm
c 0.10 0.15 0.25 mm
D 1.80 2.05 2.20 mm
E 1.15 1.30 1.35 mm
He 2.00 2.10 2.40 mm
e 1.20 1.30 1.40 mm
e1 0.20 0.35 0.56 0.65 BSC
L 0.70 0.90 mm

2404091718_LRC-LBSS139WT1G_C383204.pdf

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