30V P Channel MOSFET LRC LPB3407LT1G Featuring Low RDS ON and AEC Q101 Qualification for Automotive
Product Overview
The LPB3407LT1G and S-LPB3407LT1G are 30V P-Channel Enhancement-Mode MOSFETs designed for load switch and PWM applications. Leveraging advanced trench technology, these devices offer low on-state resistance (RDS(ON)) at various gate-source voltages (VGS) and drain currents (ID). The S-prefix variants are specifically tailored for automotive and other applications with unique site and control change requirements, meeting AEC-Q101 qualification and PPAP capability. Both product lines comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Series: LPB3407LT1G, S-LPB3407LT1G
- Technology: Advanced trench technology
- Material Compliance: RoHS, Halogen Free
- Automotive Qualification (S-prefix): AEC-Q101 qualified, PPAP capable
- Package Type: SOT23LC
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25C) | ||||||
| DrainSource Voltage | VDS | -30 | V | |||
| GateSource Voltage | VGS | -20 | +20 | V | ||
| Pulsed Drain Current | IDM | -30 | A | Note 3 | ||
| Continuous Drain Current | ID | A | ||||
| TA =25C | -10 | A | Steady-State | |||
| TA =70C | -6.3 | A | Steady-State | |||
| Power Dissipation | PD | 1.4 | W | Note 2 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Ambient | RJA | 80 | /W | Note 1 | ||
| Maximum Junction-to-Ambient | RJA | 90 | /W | Note 1 | ||
| Maximum Junction-to-Lead | RJL | 0.9 | /W | |||
| Electrical Characteristics (Ta= 25C) | ||||||
| DrainSource Breakdown Voltage | VBRDSS | -30 | V | (VGS = 0, ID = -250A) | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | (VGS = 0, VDS = -24 V) | ||
| -5 | A | (VGS = 0, VDS = -24 V,TJ =55C) | ||||
| GateBody Leakage Current | IGSS | 100 | nA | (VDS =0V, VGS = 20V) | ||
| Gate Threshold Voltage | VGS(th) | -2 | -3.8 | V | (VDS = VGS, ID = -250A) | |
| Static DrainSource OnState Resistance | RDS(on) | 60 | m | (VGS =-10V, ID =-4.1A) | ||
| 80 | m | (VGS =-4.5V, ID =-3A) | ||||
| Diode Forward Voltage | VSD | -0.7 | V | (IS =-1A,VGS =0V) | ||
| Input Capacitance | Ciss | 670 | pF | (VGS =0V, VDS = -15V, f=1MHz) | ||
| Output Capacitance | Coss | 74 | pF | (VGS =0V, VDS = -15V, f=1MHz) | ||
| Reverse Transfer Capacitance | Crss | 6 | pF | (VGS =0V, VDS = -15V, f=1MHz) | ||
| Gate resistance | Rg | 1.2 | (VGS =0V, VDS =0V, f=1MHz) | |||
| Total Gate Charge | Qg | 19 | nC | (VDS =-15V, ID =-4A) | ||
| Total Gate Charge | Qg | 7.2 | nC | (VGS =-10V, VDS =-15V, RL =3.6Ohm,RGEN =3Ohm) | ||
| Gate Source Charge | Qgs | 4 | nC | |||
| Gate Drain Charge | Qgd | 5.3 | nC | |||
| Turn-On DelayTime | td(on) | 5.5 | ns | |||
| Turn-On Rise Time | tr | - | - | ns | ||
| Turn-Off DelayTime | td(off) | 11 | ns | |||
| Turn-Off Fall Time | tf | 8.8 | ns | |||
| Body Diode Reverse Recovery Time | trr | - | - | ns | (IF =-4A, dI/dt=100A/s) | |
| Body Diode Reverse Recovery Charge | Qrr | - | - | nC | (IF =-4A, dI/dt=100A/s) | |
| Device Marking and Ordering Information | ||||||
| Model | Marking | Shipping | ||||
| LPB3407LT1G | A07 | 3000/Tape&Reel | ||||
| LPB3407LT3G | A07 | 10000/Tape&Reel | ||||
| S-LPB3407LT1G | A07 | 3000/Tape&Reel | ||||
Note 1: The value of RJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
Note 2: Repetitive rating, pulse width limited by junction temperature.
Note 3: The RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient.
2410010133_LRC-LPB3407LT1G_C5273738.pdf
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