1.8 Volt Rated N Channel MOSFET LRC LSI1012LT1G with Low Threshold Voltage and Fast Switching Speed
Key Attributes
Model Number:
LSI1012LT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.25Ω@1.8V,350mA
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
225mW
Gate Charge(Qg):
750pC@4.5V,10V
Mfr. Part #:
LSI1012LT1G
Package:
SOT-23
Product Description
Product Overview
The LESHAN RADIO COMPANY, LTD. S-LSI1012LT1G is an N-Channel 1.8-V (G-S) Power MOSFET designed for high-side switching applications. It features TrenchFET technology, offering low on-resistance and a low threshold voltage for ease of driving and low-voltage operation. The device includes Gate-Source ESD protection, fast switching speeds, and is suitable for battery-operated systems and power supply converter circuits. Applications include drivers for relays, solenoids, lamps, displays, and memory, as well as load/power switching in cell phones and pagers.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Device Type: N-Channel MOSFET
- Voltage Rating: 1.8-V Rated
- Protection: Gate-Source ESD Protected
- Package: SOT-23
- Automotive Qualification: S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Technical Specifications
| Model | Shipping | Marking | Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|---|---|---|
| LSI1012LT1G | 10000/Tape&Reel | A2 | Drain-Source Voltage | VDS | 20 | V | |||
| LSI1012LT3G | 3000/Tape&Reel | A2 | Gate-Source Voltage | VGS | 6 | V | |||
| Continuous Drain Current (TJ = 150 C) | ID | TA = 25 C | 600 | 500 | mA | ||||
| Continuous Drain Current (TJ = 150 C) | ID | TA = 85 C | 400 | 350 | mA | ||||
| Pulsed Drain Current | IDM | 1000 | mA | ||||||
| Continuous Source Current (diode conduction) | IS | 275 | 250 | mA | |||||
| Maximum Power Dissipation | P | mW | |||||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | C | |||||
| Static Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 uA | 0.45 | 0.9 | V | ||||
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS = -4.5 V | 0.5 | 1.0 | uA | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20 V, VGS = 0 V | 0.3 | 100 | nA | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20 V, VGS = 0 V, TJ = 85 C | 5 | uA | |||||
| On-State Drain Current | ID(on) | VDS = 5 V, VGS = 4.5 V | 700 | mA | |||||
| Drain-Source On-State Resistance | rDS(on) | VGS = 4.5 V, ID = 600 mA | 0.41 | 0.70 | Ohm | ||||
| Drain-Source On-State Resistance | rDS(on) | VGS = 2.5 V, ID = 500 mA | 0.53 | 0.85 | Ohm | ||||
| Drain-Source On-State Resistance | rDS(on) | VGS = 1.8 V, ID = 350 mA | 0.70 | 1.25 | Ohm | ||||
| Forward Transconductance | gfs | VDS = 10 V, ID = 400 mA | 1.0 | S | |||||
| Diode Forward Voltage | VSD | IS = 150 mA, VGS = 0 V | 0.8 | 1.2 | V | ||||
| Total Gate Charge | Qg | VDS = 10 V, VGS = 4.5 V, ID = 250 mA | 750 | pC | |||||
| Gate-Source Charge | Qgs | 75 | pC | ||||||
| Gate-Drain Charge | Qgd | 225 | pC | ||||||
| Turn-On Delay Time | td(on) | VDD = 10 V, RL = 47 Ohm, ID = 200 mA, VGEN = 4.5 V, RG = 10 Ohm | 5 | ns | |||||
| Rise Time | tr | 5 | ns | ||||||
| Turn-Off Delay Time | td(off) | 25 | ns | ||||||
| Fall Time | tf | 11 | ns |
Notes:
- Pulse width limited by maximum junction temperature.
- Surface Mounted on FR4 Board.
- Pulse test; pulse width <= 300 us, duty cycle <= 2%.
- Guaranteed by design, not subject to production testing.
1809051322_LRC-LSI1012LT1G_C136183.pdf
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