650 volt 40 amp trench field stop IGBT luxin semi AUGK40N65F1A1 suitable for power supplies and inverters
Key Attributes
Model Number:
AUGK40N65F1A1
Product Custom Attributes
Pd - Power Dissipation:
188W
Td(off):
169ns
Td(on):
37ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
37pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Operating Temperature:
-40℃~+150℃
Gate Charge(Qg):
93nC@15V
Reverse Recovery Time(trr):
95ns
Switching Energy(Eoff):
880uJ
Turn-On Energy (Eon):
1.52mJ
Input Capacitance(Cies):
2.035nF
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
82pF
Mfr. Part #:
AUGK40N65F1A1
Package:
TO-263-2L
Product Description
Product Overview
The AUGK40N65F1A1 is a 650V / 40A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology, offering high-speed switching, excellent ruggedness with temperature stability, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. This IGBT is ideal for Uninterruptible Power Supplies, Inverters, Welding Converters, PFC applications, and converters with high switching frequencies.
Product Attributes
- Brand: LU-Semi
- Model: AUGK40N65F1A1
- Package: TO-263-2L
- Packaging: Tape and reel
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 unless otherwise specified |
| VGE=0V , IC=250uA | ||||
| DC collector current | IC | 80 | A | TC = 25C |
| 40 | TC = 100C | |||
| Diode Forward current | IF | 80 | A | TC = 25C |
| 40 | TC = 100C | |||
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | tp 10usD<0.01 |
| Turn off safe operating area | -120 | A | VCE 650V, Tj 175C, tp = 1s | |
| Pulse collector current | ICM | 120 | A | VGE =15V, tp limited by Tjmax |
| Diode Pulsed Current | IFpuls | 120 | A | tp limited by Tjmax |
| Power dissipation | Ptot | 188 | W | Tj=25C |
| Max Junction Temperature | Tjmax | 175 | C | |
| Operating junction temperature | Tj,op | -40...+150 | C | |
| Storage temperature | TS | -55...+150 | C | |
| Soldering temperature, wave soldering | 260 | C | 1.6mm (0.063in.) from case for 10s | |
| IGBT thermal resistance, junction - case | R(j-c) | 0.90 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 1.60 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 62.5 | K/W | |
| Gate Threshold Voltage | VGE(th) | 4.0 / 5.0 / 6.0 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.80 / 2.40 | V | VGE=15V, IC=40A, Tj = 25C |
| 2.4 | Tj = 175C | |||
| Zero gate voltage collector current | ICES | 0.1 | A | VCE = 650V, VGE = 0V, Tj = 25C |
| 5000 | Tj = 175C | |||
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 20 | S | VCE = 20V, IC = 40A |
| Input capacitance | Cies | 2035 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 82 | pF | |
| Reverse transfer capacitance | Cres | 37 | pF | |
| Gate charge | QG | 93 | nC | VCC = 520V, IC = 40A, VGE = 15V |
| Turn-on Delay Time | td(on) | 37 | ns | Tj = 25C, VCC = 400V, IC =40.0A, VGE = 0.0/15.0V, Rg=15 |
| Rise Time | tr | 65 | ns | |
| Turn-off Delay Time | td(off) | 169 | ns | |
| Fall Time | tf | 43 | ns | |
| Turn-on Energy | Eon | 1.52 | mJ | |
| Turn-off Energy | Eoff | 0.88 | mJ | |
| Diode Forward Voltage | VFM | 2.0 | V | VGE=0V, IF = 40A |
| Reverse Recovery Time | Trr | 95 | ns | Tj = 25C, IF= 40A VR = 400V, di/dt =700A/s |
| Reverse Recovery Current | Irr | 16 | A | |
| Reverse Recovery Charge | Qrr | 0.64 | nC |
2507221720_luxin-semi-AUGK40N65F1A1_C49215479.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
