Low On Resistance Complementary N and P Channel MOSFET LRC S LNP2010DT2AG for Automotive Applications
Key Attributes
Model Number:
S-LNP2010DT2AG
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.7A;6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ
Gate Threshold Voltage (Vgs(th)):
850mV;1.2V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
84pF;59.6pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
751pF;636pF
Pd - Power Dissipation:
1.38W
Output Capacitance(Coss):
91pF;62.8pF
Gate Charge(Qg):
13.9nC@10V;6.8nC@4.5V
Mfr. Part #:
S-LNP2010DT2AG
Package:
DFN2020-6D
Product Description
Product Overview
The S-LNP2010DT2AG is a complementary N- and P-Channel Enhancement Mode MOSFET designed for automotive and other applications requiring unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable. This device offers low on-resistance characteristics for both N-channel and P-channel configurations, ensuring efficient power handling. It is RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Model Prefix: S- (for automotive and other applications requiring unique site and control change requirements)
- Compliance: RoHS, Halogen Free
- Qualification: AEC-Q101 Qualified, PPAP Capable
- Package Type: DFN2020-6D
Technical Specifications
| P-Channel MOSFET | ||
|---|---|---|
| Parameter | Symbol | Limits |
| Drain-Source Voltage | VDS | -20 V |
| RDS(ON) @ VGS = -4.5V, IDS = -4.7A | RDS(ON) | ≤ 70 mΩ |
| RDS(ON) @ VGS = -2.5V, IDS = -1.0A | RDS(ON) | ≤ 110 mΩ |
| Gate-to-Source Voltage (Continuous) | VGS | ±12 V |
| N-Channel MOSFET | ||
|---|---|---|
| Parameter | Symbol | Limits |
| Drain-Source Voltage | VDS | 20 V |
| RDS(ON) @ VGS = 2.5V, IDS = 5.2A | RDS(ON) | ≤ 50 mΩ |
| RDS(ON) @ VGS = 4.5V, IDS = 6A | RDS(ON) | ≤ 40 mΩ |
| Gate-to-Source Voltage (Continuous) | VGS | ±12 V |
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| P-Channel Electrical Characteristics (Ta = 25°C) | |||||
| Drain-Source Breakdown Voltage | VBRDSS | -20 | - | - | V |
| Gate Threshold Voltage | VGS(th) | -0.6 | -0.85 | -1.4 | V |
| Zero Gate Voltage Drain Current | IDSS | - | -1 | - | µA |
| Gate-to-Source Leakage Current | IGSS | - | - | ±100 | nA |
| Drain-to-Source On Resistance | RDS(on) | - | 58 | 70 | mΩ |
| Drain-to-Source On Resistance | RDS(on) | - | 63 | 75 | mΩ |
| Drain-to-Source On Resistance | RDS(on) | - | 75 | 110 | mΩ |
| Forward Voltage | VSD | - | -1.2 | - | V |
| Total Gate Charge | Qg | - | 13.9 | - | nC |
| Gate-to-Source Gate Charge | Qgs | - | 1.02 | - | nC |
| Gate-to-Drain Charge | Qgd | - | 1.94 | - | nC |
| Turn-On Delay Time | td(on) | - | 16.5 | - | ns |
| Rise Time | tr | - | 23.4 | - | ns |
| Turn-Off Delay Time | td(off) | - | 33.3 | - | ns |
| Fall Time | tf | - | - | - | ns |
| Input Capacitance | Ciss | - | 751 | - | pF |
| Output Capacitance | Coss | - | 91 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 84 | - | pF |
| N-Channel Electrical Characteristics (Ta = 25°C) | |||||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | - | - | V |
| Gate Threshold Voltage | VGS(th) | 0.5 | - | 1.2 | V |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | µA |
| Gate Body Leakage | IGSS | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(on) | - | 42 | 50 | mΩ |
| Drain-Source On-State Resistance | RDS(on) | - | 33 | 40 | mΩ |
| Diode Forward Current | IS | - | - | 1.7 | A |
| Forward Voltage | VSD | - | -1.2 | - | V |
| Total Gate Charge | Qg | - | 6.8 | - | nC |
| Gate-to-Source Gate Charge | Qgs | - | - | - | nC |
| Gate-to-Drain Charge | Qgd | - | 2 | - | nC |
| Turn-On Delay Time | td(on) | - | 10.8 | - | ns |
| Rise Time | tr | - | 15.3 | - | ns |
| Turn-Off Delay Time | td(off) | - | 76.7 | - | ns |
| Fall Time | tf | - | 23.8 | - | ns |
| Input Capacitance | Ciss | - | 636 | - | pF |
| Output Capacitance | Coss | - | 62.8 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 59.6 | - | pF |
| Thermal Characteristics | |||||
| Maximum Power Dissipation | PD | - | 1.38 | - | W |
| Thermal Resistance, Junction-to-Ambient | RΘJA | - | - | 90 | ºC/W |
| Thermal Resistance, Junction-to-Case | RΘJC | - | 65 | - | ºC/W |
| Junction and Storage Temperature | TJ, Tstg | -55 | - | +150 | ºC |
| Device Marking and Ordering Information | ||
|---|---|---|
| Device Marking | Order Information | Quantity |
| T2 | S-LNP2010DT2AG | 4000/Tape&Reel |
| Outline and Dimensions (DFN2020-6D) | ||
|---|---|---|
| Dimension | Min | Max |
| D | 1.95 | 2.05 |
| E | 1.95 | 2.05 |
| L | 0.20 | 0.30 |
| A1 | 0.00 | 0.05 |
| C | 0.60 | 0.70 |
| D2 | 0.65 | 0.75 |
| E2 | 0.95 | 1.00 |
| G1 | 0.37 | 0.45 |
| b | 0.25 | 0.35 |
| e | - | 0.65 |
| A | 0.65 | 1.00 |
| A3 | - | - |
2212131830_LRC-S-LNP2010DT2AG_C5273391.pdf
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