1200V 25A Trench Field Stop IGBT Luxin-semi YGW25N120U2 Designed for in Solar Inverters Welding and PFC
Key Attributes
Model Number:
YGW25N120U2
Product Custom Attributes
Pd - Power Dissipation:
210W
Td(off):
90ns
Td(on):
45ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
40pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.3V@250uA
Operating Temperature:
-40℃~+150℃
Gate Charge(Qg):
120nC@15V
Output Capacitance(Coes):
70pF
Reverse Recovery Time(trr):
420ns
Switching Energy(Eoff):
650uJ
Turn-On Energy (Eon):
2.5mJ
Mfr. Part #:
YGW25N120U2
Package:
TO-247
Product Description
Product Overview
The YGW25N120U2 is a 1200V / 25A Trench Field Stop IGBT designed for high reliability and performance. It features Trench-Stop Technology for high-speed switching, enhanced ruggedness, and short circuit withstand time. This IGBT is suitable for applications such as Uninterruptible Power Supplies, Solar Inverters, Welding, and PFC applications.
Product Attributes
- Brand: LU-Semi
- Product Code: YGW25N120U2
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | |
| DC Collector Current | IC | 25 | A | TC = 100C |
| Diode Forward Current | IF | 15 | A | TC = 100C |
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |
| Short Circuit Withstand Time | Tsc | 10 | s | VGE=15V, VCE600V |
| Power Dissipation | Ptot | 210 | W | Tj=25 |
| Operating Junction Temperature | Tj | -40...+150 | C | |
| Storage Temperature | Ts | -55...+150 | C | |
| IGBT Thermal Resistance (junction-case) | R(j-c) | 0.61 | K/W | |
| Diode Thermal Resistance (junction-case) | R(j-c) | 1.2 | K/W | |
| Thermal Resistance (junction-ambient) | R(j-a) | 40 | K/W | |
| Gate Threshold Voltage | VGE(th) | 5.3 - 6.5 | V | VGE=VCE, IC=250A |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.85 - 2.25 | V | VGE=15V, IC=25A, Tj = 25C |
| Collector-Emitter Saturation Voltage | VCE(sat) | 2.45 | V | VGE=15V, IC=25A, Tj = 150C |
| Zero Gate Voltage Collector Current | ICES | 250 | A | VCE = 1200V, VGE = 0V, Tj = 25C |
| Zero Gate Voltage Collector Current | ICES | 1000 | A | VCE = 1200V, VGE = 0V, Tj = 150C |
| Gate-Emitter Leakage Current | IGES | 200 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 15 | S | VCE=20V, IC=25A |
| Input Capacitance | Cies | 2800 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output Capacitance | Coes | 70 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Reverse Transfer Capacitance | Cres | 40 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Gate Charge | QG | 120 | nC | VCC = 960V, IC = 25A, VGE = 15V |
| Turn-on Delay Time | td(on) | 45 | ns | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=10, Tj = 25C |
| Rise Time | tr | 40 | ns | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=10, Tj = 25C |
| Turn-on Energy | Eon | 2.5 | mJ | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=10, Tj = 25C |
| Turn-off Delay Time | td(off) | 90 | ns | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=10, Tj = 25C |
| Fall Time | tf | 95 | ns | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=10, Tj = 25C |
| Turn-off Energy | Eoff | 0.65 | mJ | VCC = 600V, IC = 25A, VGE = 0/15V, Rg=10, Tj = 25C |
| Diode Forward Voltage | VFM | 3.1 | V | IF = 25A, Tj = 25C |
| Reverse Recovery Time | Trr | 420 | ns | IF= 25A, di/dt= 600A/s, Tj = 25C |
| Reverse Recovery Current | Irr | 17 | A | IF= 25A, di/dt= 600A/s, Tj = 25C |
| Reverse Recovery Charge | Qrr | 2570 | nC | IF= 25A, di/dt= 600A/s, Tj = 25C |
2410121257_luxin-semi-YGW25N120U2_C4153676.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
