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quality Power management MOSFET LRC LNTA7002NT1G features low gate charge and halogen free material compliance factory
quality Power management MOSFET LRC LNTA7002NT1G features low gate charge and halogen free material compliance factory

Power management MOSFET LRC LNTA7002NT1G features low gate charge and halogen free material compliance

Key Attributes
Model Number: LNTA7002NT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
154mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
7Ω@4.5V,154mA
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Reverse Transfer Capacitance (Crss@Vds):
3.5pF
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
11.5pF@5V
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
-
Mfr. Part #:
LNTA7002NT1G
Package:
SC-89
Product Description

Product Overview

The LNTA7002NT1G and S-LNTA7002NT1G are small signal MOSFETs designed for power management load switching and level shifting applications. These devices are ideal for portable electronics such as cell phones, media players, digital cameras, PDAs, video games, and handheld computers. Key features include low gate charge for fast switching, a small 1.6 x 1.6 mm footprint, and ESD-protected gates. The S-prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with unique site and control change requirements. These MOSFETs are RoHS compliant and Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Qualification (S-prefix): AEC-Q101
  • Packaging: Tape & Reel

Technical Specifications

Model Device Marking Shipping Footprint
LNTA7002NT1G T6 10000/Tape&Reel SC89
S-LNTA7002NT1G T6 3000/Tape&Reel SC89
Characteristic Symbol Limits (Min) Limits (Typ) Limits (Max) Unit
MAXIMUM RATINGS (Ta = 25C)
DraintoSource Voltage VDSS 30 V
GatetoSource Voltage VGS 10 V
Continuous Drain Current (Note 1) ID 154 mA
Power Dissipation (Note 1) PD 300 mW
Pulsed Drain Current (tp 10 s ) IDM 618 mA
Operating Junction and Storage Temperature Tj,Tstg -55 +150
Continuous Source Current (Body Diode) ISD 154 mA
Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260
THERMAL CHARACTERISTICS
JunctiontoAmbient Steady State (Note 1) RJA 416 /W
ELECTRICAL CHARACTERISTICS (Ta= 25C)
DrainSource Breakdown Voltage (VGS = 0, ID = 100A) VBRDSS 30 V
Zero Gate Voltage Drain Current (VGS = 0, VDS = 30 V) IDSS 1 A
Zero Gate Voltage Drain Current (VGS = 0, VDS = 20 ,Tj = 85 C) IDSS 1 A
GatetoSource Leakage Current (VDS = 0 V, VGS = 10 V) IGSS 25 A
GatetoSource Leakage Current (VDS = 0 V, VGS = 5 V) IGSS 1 A
GatetoSource Leakage Current (VDS = 0 V, VGS = 5 V ,Tj = 85 C) IGSS 1 A
Gate Threshold Voltage (VDS = VGS, ID = 100A) VGS(th) 0.5 1 1.5 V
DraintoSource On Resistance (VGS = 4.5 V, ID = 154 mA) RDS(on) 1.4
DraintoSource On Resistance (VGS = 2.5 V, ID = 154 mA) RDS(on) 2.3
Forward Transconductance (VDS = 3 V, ID = 154 mA) gfs 80 mS
CAPACITANCES
Input Capacitance (VDS = 5.0 V, f = 1 MHz,VGS = 0 V) Ciss 11.5 pF
Output Capacitance (VDS = 5.0 V, f = 1 MHz,VGS = 0 V) Coss 10 pF
Reverse Transfer Capacitance (VDS = 5.0 V, f = 1 MHz,VGS = 0 V) Crss 3.5 pF
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time td(ON) 13 ns
Rise Time tr 15 ns
TurnOff Delay Time td(OFF) 98 ns
Fall Time tf 60 ns
DrainSource Diode Characteristics
Diode Forward Voltage (VGS = 0 V, IS = 154 mA) VSD -0.77 V
Dimension Min (mm) Nom (mm) Max (mm) Min (in) Nom (in) Max (in)
A 1.50 1.60 1.70 0.059 0.063 0.067
B 0.75 0.85 0.95 0.030 0.034 0.040
C 0.60 0.70 0.80 0.024 0.028 0.067
D 0.23 0.28 0.33 0.009 0.011 0.013
G 0.50BSC 0.020BSC
H 0.53REF 0.021REF
J 0.10 0.15 0.20 0.004 0.006
K 0.30 0.40 0.50 0.012 0.016 0.020
L 1.10REF 0.043REF
N
S 1.50 1.60 1.70 0.059 0.063 0.067

2108142130_LRC-LNTA7002NT1G_C2846992.pdf

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