Electronic Component NPN Transistor luJing MMBTA42 Featuring Low Collector Emitter Saturation Voltage

Key Attributes
Model Number: MMBTA42
Product Custom Attributes
Mfr. Part #:
MMBTA42
Package:
SOT-23
Product Description

Product Overview

The MMBTA42 is a high breakdown voltage NPN transistor with low collector-emitter saturation voltage. It is complementary to the MMBTA92 (PNP) and is designed for various electronic applications. The device comes in a SOT-23 molded plastic package, suitable for any mounting position.

Product Attributes

  • Brand: Lujingsemi
  • Origin: China
  • Material: Plastic-Encapsulate
  • Package: SOT-23
  • Certifications: Not specified

Technical Specifications

ParameterSymbolRating UnitTest ConditionsMinTypMaxUnit
Collector-Base VoltageVCBO300V
Collector-Emitter VoltageVCEO300V
Emitter-Base VoltageVEBO5V
Collector Current - ContinuousIC500mA
Collector Power DissipationPC350mW
Thermal Resistance Junction to AmbientRJA357/W
Junction TemperatureTJ150
Storage Temperature RangeTstg-55 to 150V
Collector-base breakdown voltageVCBO300Ic= 100 A IE= 0300
Collector- emitter breakdown voltageVCEO300Ic= 1 mA IB= 0300
Emitter - base breakdown voltageVEBO5IE= 100 XA IC= 05
Collector-base cut-off currentICBO0.1VCB= 200 V , IE= 00.1
Emitter cut-off currentIEBO0.1VEB= 5V , IC=00.1
Collector-emitter saturation voltageVCE(sat)0.2IC= 20 mA, IB= 2mA0.2
Base - emitter saturation voltageVBE(sat)0.9IC= 20mA, IB= 2mA0.9
DC current gain (hfe)hfeVCE= 10V, IC= 1mA60
DC current gain (hfe)hfeVCE= 10V, IC= 10mA100
DC current gain (hfe)hfeVCE= 10V, IC= 30mA60
Transition frequencyfT50VCE= 20V, IC= 10mA, f=30MHz50MHz
hfe(2) ClassificationType MMBTA42-L100200
hfe(2) ClassificationType MMBTA42100300

2512041545_luJing-MMBTA42_C53058845.pdf

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