High power Trench MOSFET MagnaChip Semicon MDT15N054PTRH for DC DC and AC DC converter applications
Key Attributes
Model Number:
MDT15N054PTRH
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
191A
RDS(on):
4.63mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Output Capacitance(Coss):
688pF
Pd - Power Dissipation:
517W
Input Capacitance(Ciss):
6.418nF
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
MDT15N054PTRH
Package:
TOLL
Product Description
Product Overview
The Magnachip MDT15N054PTRH is a single N-channel Trench MOSFET designed for high-performance power applications. Featuring enhanced avalanche ruggedness and a maximum junction temperature of 175C, it is ideal for brushed and BLDC motor drive systems, load switches, and DC/DC and AC/DC converters. Its Trench power MOSFET technology ensures efficient operation with low on-state resistance and high current handling capabilities.
Product Attributes
- Brand: Magnachip Power Technology
- Type: Single N-channel Trench MOSFET
- Certifications: Halogen Free, RoHS Status
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions / Note |
| ABSOLUTE MAXIMUM RATINGS | VDS | 150 | V | Drain-source Voltage |
| VGS | ±20 | V | Gate-source Voltage | |
| Ptot | 517 | W | Total power dissipation Tc=25°C | |
| 259 | W | Total power dissipation Tc=100°C | ||
| IDM | 765 | A | Pulsed drain current Pulse width limited by Tjmax | |
| ID | 191 | A | Drain current Tc=25°C | |
| 135 | A | Drain current Tc=100°C | ||
| EAS | 392 | mJ | Avalanche energy, single pulse Starting TJ=25°C, L=1mH, IAS=28A, VDD=50V, VGS=10V | |
| Tj, Tstg | -55 ~ 175 | °C | Operating and storage temperature | |
| THERMAL CHARACTERISTICS | RθJC | 0.29 | °C/W | Thermal resistance, junction - case |
| RθJA | 40 | °C/W | Thermal resistance, junction - ambient Surface mounted FR-4 board by JEDEC (jesd51-7) | |
| Junction temperature, max. | 175 | °C | ||
| STATIC CHARACTERISTICS | VGS(th) | 2.40 - 3.90 | V | VDS=VGS, ID=250 μA |
| RDS(on) | 4.63 - 5.40 | mΩ | VGS=10 V, ID=70 A | |
| V(BR)DSS | 150 | - | VGS=0 V, ID=250 μA | |
| IGSS | - ± 100 | nA | VGS=±20 V, VDS=0 V | |
| IDSS | - 1 | μA | VDS=150 V, VGS=0 V | |
| gfs | - 120 | - | S VDS=20 V, ID=70 A | |
| RG | - 2.30 | - | Ω f=1MHz | |
| DYNAMIC CHARACTERISTICS | Ciss | - 6418 | pF | VGS=0 V, VDS=75 V, f=1 MHz |
| Coss | - 688 | pF | VGS=0 V, VDS=75 V, f=1 MHz | |
| Crss | - 15 | pF | VGS=0 V, VDS=75 V, f=1 MHz | |
| tr | - 13 | ns | VDD=75 V, ID=70 A, VGS=10 V, RG,ext=3Ω | |
| td(on) | - 31 | ns | VDD=75 V, ID=70 A, VGS=10 V, RG,ext=3Ω | |
| td(off) | - 80 | ns | VDD=75 V, ID=70 A, VGS=10 V, RG,ext=3Ω | |
| tf | - 17 | ns | VDD=75 V, ID=70 A, VGS=10 V, RG,ext=3Ω | |
| GATE CHARGE CHARACTERISTICS | Qg | - 90 | nC | VDD=75 V, ID=70 A, VGS=0 to 10 V |
| Qgs(th) | - 20 | nC | VDD=75 V, ID=70 A, VGS=0 to 10 V | |
| Qgs | - 31 | nC | VDD=75 V, ID=70 A, VGS=0 to 10 V | |
| Qgd | - 18 | nC | VDD=75 V, ID=70 A, VGS=0 to 10 V | |
| Vplateau | - 5.3 | V | VDD=75 V, ID=70 A, VGS=0 to 10 V | |
| SOURCE-DRAIN DIODE | IS | - 167 | A | Continuos drain current |
| IS,pulse | - 668 | A | Diode pulse current tp ≤ 10 μs | |
| trr | - 113 | ns | IF=70 A, diF/dt=100 A/μs | |
| Qrr | - 684 | nC | IF=70 A, diF/dt=100 A/μs | |
| VSD | - 0.8 - 1.2 | V | IF=70 A, VGS=0 V |
2509121533_MagnaChip-Semicon-MDT15N054PTRH_C42419098.pdf
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