Power Switching MOSFET MCAC53N06Y TP with Moisture Sensitivity Level 1 and Lead Free RoHS Compliance

Key Attributes
Model Number: MCAC53N06Y-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
53A
RDS(on):
6.9mΩ@4.5V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V
Reverse Transfer Capacitance (Crss@Vds):
14pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
1.988nF@30V
Gate Charge(Qg):
31nC@30V
Mfr. Part #:
MCAC53N06Y-TP
Package:
DFN(5x6)
Product Description

MCAC53N06Y N-CHANNEL MOSFET

Product Overview

The MCAC53N06Y is an N-Channel MOSFET designed with Split Gate Trench Power MV MOSFET Technology. It offers low gate charge and is housed in a DFN5060 package, meeting UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. This device is Halogen Free, "Green", and Lead Free/RoHS Compliant. It is suitable for applications requiring efficient power handling and switching characteristics.

Product Attributes

  • Brand: MCCSEMI
  • Technology: Split Gate Trench Power MV MOSFET
  • Package: DFN5060
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Environmental Compliance: Halogen Free. Green Device, Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Operating Junction Temperature Range -55 +150 °C
Storage Temperature Range -55 +150 °C
Thermal Resistance Junction to Ambient (t≤10s) RθJA (Note 2) 17 °C/W
Thermal Resistance Junction to Ambient (Steady-State) RθJA (Note 2,3) 55 °C/W
Thermal Resistance Junction to Case (Steady-State) RθJC 1.8 °C/W
Continuous Drain Current (Note 4) ID TC=25°C 53 A
Continuous Drain Current (Note 4) ID TC=100°C 34 A
Pulsed Drain Current (Note 5) IDM TC=25°C 195 A
Total Power Dissipation (Note 2) PD TC=25°C 28 W
Total Power Dissipation (Note 2) PD TC=100°C 110 W
Single Pulse Avalanche Energy (Note 5) EAS TC=25°C 70 mJ
Single Pulse Avalanche Energy (Note 5) EAS TC=100°C 195 W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 60 65 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 µA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V,TJ=55°C 5 µA
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1.1 1.7 2.5 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 5.3 7.5
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=10A 6.9 9.5
Forward Tranconductance gFS VDS=5V, ID=20A 30 S
Diode Forward Voltage VSD VGS=0V, IS=20A 0.85 0.99 V
Continuous Body Diode Current IS 53 A
Input Capacitance Ciss VDS=30V,VGS=0V,f=1MHz 1988 pF
Output Capacitance Coss 470 pF
Reverse Transfer Capacitance Crss 14 pF
Gate Resistance Rg 1.6 Ω
Total Gate Charge Qg VDS=30V,VGS=4.5V,ID=20A 16 nC
Total Gate Charge Qg VDS=30V,VGS=10V,ID=20A 31 nC
Gate-Source Charge Qgs 6 nC
Gate-Drain Charge Qgd 5 nC
Reverse Recovery Chrage Qrr IS=20A, di/dt=500A/µs 58 nC
Reverse Recovery Time trr 17 ns
Turn-On Delay Time td(on) VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω 10.5 ns
Turn-On Rise Time tr 4.5 ns
Turn-Off Delay Time td(off) 29.5 ns
Turn-Off Fall Time tf 8 ns

DIMENSIONS

DIM INCHES MM NOTE
A 0.031 - 0.047 0.80 - 1.20
B 0.193 - 0.222 4.90 - 5.64
C 0.232 - 0.250 5.90 - 6.35
D 0.148 - 0.167 3.75 - 4.25
E 0.126 - 0.154 3.20 - 3.92
F 0.189 - 0.213 4.80 - 5.40
G 0.222 - 0.239 5.65 - 6.06
H 0.045 - 0.059 1.15 - 1.50
K 0.012 - 0.020 0.30 - 0.50
J 0.046 - 0.054 1.17 - 1.37
L 0.012 - 0.028 0.30 - 0.71
M 0.016 - 0.028 0.40 - 0.71
N 0.010 TYP. 0.254

Ordering Information

Device Packing Part Number
MCAC53N06Y Tape&Reel: 5Kpcs/Reel MCAC53N06Y-TP

2410010132_MCC-MCAC53N06Y-TP_C5189463.pdf
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