Super Junction Power MOSFET MCC MSJPF06N80A BP with 6A Continuous Drain Current and Halogen Free option
Key Attributes
Model Number:
MSJPF06N80A-BP
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
6A
RDS(on):
1.2Ω@10V,2.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V
Reverse Transfer Capacitance (Crss@Vds):
0.9pF@100V
Number:
1 N-channel
Pd - Power Dissipation:
22W
Input Capacitance(Ciss):
349pF@100V
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
MSJPF06N80A-BP
Package:
TO-220F
Product Description
Product Overview
The MSJPF06N80A is an N-CHANNEL Super-Junction Power MOSFET designed for efficient power management. It features a very low FOM (RDS(on) Qg), a high Drain-Source Voltage rating of 800V, and a continuous drain current of 6A. This MOSFET is constructed with an epoxy that meets UL 94 V-0 flammability rating and is available in a Halogen Free option. Its robust design and electrical characteristics make it suitable for various power switching applications.
Product Attributes
- Brand: MCC
- Model Series: Super-Junction Power MOSFET
- Flammability Rating: UL 94 V-0
- Compliance: Lead Free Finish/RoHS Compliant (P Suffix); Halogen Free Available (Adding "-HF" Suffix)
- Packaging: Bulk: 50pcs/Tube, 1Kpcs/Box, 5Kpcs/Carton
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 800 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Pulsed Drain Current | IDM | (Note 1) | 18 | A | ||
| Continuous Drain Current | ID | TC=25C | 6 | A | ||
| Single Pulse Avalanche Energy | EAS | (Note 2) | 170 | mJ | ||
| Total Power Dissipation | PD | 22 | W | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Thermal Resistance (Junction to Case) | RthJC | 5.7 | C/W | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 800 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 10 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=800V, VGS=0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2.5 | 4.5 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=2.5A (Note 3) | 0.95 | 1.2 | ||
| Input Capacitance | Ciss | VDS=100V, VGS=0V, f=400kHz | 349 | pF | ||
| Output Capacitance | Coss | VDS=100V, VGS=0V, f=400kHz | 16 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=100V, VGS=0V, f=400kHz | 0.9 | pF | ||
| Total Gate Charge | Qg | VDD =400V, ID=4.5A,RG=25 (Note 4) | 11 | nC | ||
| Gate-Source Charge | Qgs | VDD =400V, ID=4.5A,RG=25 (Note 4) | 3.3 | nC | ||
| Gate-Drain Charge | Qgd | VDD =400V, ID=4.5A,RG=25 (Note 4) | 4.5 | nC | ||
| Turn-On Delay Time | td(on) | VDD=400V, ID=4.5A,RG=25 (Note 4) | 16 | ns | ||
| Turn-On Rise Time | tr | VDD=400V, ID=4.5A,RG=25 (Note 4) | 24 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=400V, ID=4.5A,RG=25 (Note 4) | 59 | ns | ||
| Turn-Off Fall Time | tf | VDD=400V, ID=4.5A,RG=25 (Note 4) | 19 | ns | ||
| Continuous Body Diode Current | IS | 6 | A | |||
| Pulsed Diode Forward Current | ISM | 18 | A | |||
| Body Diode Voltage | VSD | ISD=4.5A, VGS=0V | 1.4 | V | ||
| Reverse Recovery Time | trr | VDD=100V, IF=IS,diF/dt=100A/s (Note 3) | 380 | ns | ||
| Reverse Recovery Charge | Qrr | VDD=100V, IF=IS,diF/dt=100A/s (Note 3) | 2 | C | ||
| Reverse Recovery Current | Irrm | VDD=100V, IF=IS,diF/dt=100A/s (Note 3) | 11 | A |
2411220716_MCC-MSJPF06N80A-BP_C6916670.pdf
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