Halogen Free MCC SI2305CHE3 TP P Channel MOSFET with Lead Free Finish and Moisture Sensitivity Level 1
Product Overview
The SI2305CHE3 is a P-Channel MOSFET designed for high-performance applications. It features AEC-Q101 qualification, low RDS(ON) and FOM, and extremely low switching loss. The device is constructed with epoxy that meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free, designated as a Green Device. It is also Lead Free and RoHS Compliant. The MOSFET is suitable for various applications requiring efficient power management and switching.
Product Attributes
- Brand: MCC (Micro Commercial Components)
- Product Line: SI2305CHE3
- Qualification: AEC-Q101 Qualified
- Flammability Rating: Epoxy Meets UL 94 V-0
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free. Green Device, Lead Free Finish/RoHS Compliant
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain -source Voltage | VDS | -20 | V | |||
| Gate -Source Voltage | VGS | 12 | V | |||
| Drain Current-Continuous | ID | -5.4 | A | |||
| Drain Source Current-Continuous(Note3) | ID | -22 | A | |||
| Total Power Dissipation(Note4) | PD | 1.3 | W | |||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Junction to Ambient Thermal Resistance(Note2) | RJA | 100 | C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -20 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.5 | -1 | V | |
| Gate-Body Leakage Current | IGSS | VGS = 12V, VDS =0V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-20V, VGS =0V | -1 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-5.4A | 40 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS=-2.5V, ID=-4A | 55 | m | ||
| Input Capacitance | Ciss | VDS=-10V,VGS=-10V,ID=-1A,RGEN=3 | 770 | pF | ||
| Output Capacitance | Coss | F=1 MHz, Open drain | 115 | pF | ||
| Reverse Transfer Capacitance | Crss | 98 | pF | |||
| Turn-On Delay Time | td(on) | 7.5 | ns | |||
| Turn-On Rise Time | tr | 14 | ns | |||
| Turn-Off Delay Time | td(off) | 40 | ns | |||
| Turn-Off Fall Time | tf | 20 | ns | |||
| Total Gate Charge | Qg | VDS=-10V,VGS=-10V,ID=-1A | 10.5 | nC | ||
| Gate-Source Charge | Qgs | 1.52 | nC | |||
| Gate-Drain Charge | Qgd | 2.42 | nC | |||
| Gate Resistance | Rg | -0.65 | ||||
| Diode Forward Voltage | VSD | IF=-0.5A,VGS=0V | -1.2 | V | ||
| Diode Forward Current | IS | -5.4 | A | |||
| Reverse Recovery Time | trr | IF=-1A, dIF/dt=100A/s | 13 | ns | ||
| Reverse Recovery Charge | Qrr | 17 | nC | |||
| Dimensions | ||||||
| DIM | INCHES | MM | MIN | MAX | MIN | MAX |
| A | 0.110 - 0.120 | 2.80 - 3.04 | ||||
| B | 0.083 - 0.104 | 2.10 - 2.64 | ||||
| C | 0.047 - 0.055 | 1.20 - 1.40 | ||||
| D | 0.034 - 0.041 | 0.85 - 1.05 | ||||
| E | 0.067 - 0.083 | 1.70 - 2.10 | ||||
| F | 0.018 - 0.024 | 0.45 - 0.60 | ||||
| G | 0.0004 - 0.006 | 0.01 - 0.15 | ||||
| H | 0.035 - 0.043 | 0.90 - 1.10 | ||||
| J | 0.003 - 0.007 | 0.08 - 0.18 | ||||
| K | 0.012 - 0.020 | 0.30 - 0.51 | ||||
| L | 0.020 | 0.50 | ||||
Note 1: Halogen free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Note 2: The value of RJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on RJA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design.
Note 3: Repetitive rating; pulse width limited by max. junction temperature.
Note 4: PD is based on max. junction temperature, using junction to ambient thermal resistance. TA=25C
2511191108_MCC-SI2305CHE3-TP_C25793619.pdf
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