Second Generation Fieldstop Trench IGBT MagnaChip Semicon MBQ60T65PESTH TO247 Package for Industrial
Key Attributes
Model Number:
MBQ60T65PESTH
Product Custom Attributes
Mfr. Part #:
MBQ60T65PESTH
Package:
TO-247
Product Description
Product Overview
The Magnachip MBQ60T65PES is a Second Generation High Speed Fieldstop Trench IGBT designed for applications requiring high efficiency and ruggedness. Leveraging advanced Magnachip technology, this IGBT offers superior switching behavior and low power loss, making it ideal for solar inverters, UPS, IH cookers, welders, and PFC applications where low conduction losses are critical. It features high input impedance and a maximum junction temperature of 175C.
Product Attributes
- Brand: Magnachip Semiconductor Ltd.
- Technology: Field Stop Trench IGBT 2nd Generation
- Package: TO-247
- Certifications: Halogen Free
- Revision: 1.2 (Jul. 2021)
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Maximum Ratings | ||||
| Collector-emitter voltage | VCE | 650 | V | DC |
| DC collector current, limited by Tvjmax | IC | 100 | A | TC=25C |
| DC collector current, limited by Tvjmax | IC | 60 | A | TC=100C |
| Pulsed collector current, tp limited by Tvjmax | ICp | 180 | A | |
| Turn off safe operating area | - | -180 | A | VCE 650V, Tvj 175C |
| Diode forward current limited by Tvjmax | IF | 60 | A | TC=25C |
| Diode forward current limited by Tvjmax | IF | 30 | A | TC=100C |
| Diode pulsed current, tp limited by Tvjmax | IFp | 200 | A | |
| Gate-emitter voltage | VGE | 20 | V | |
| Power dissipation | PD | 535 | W | TC=25C |
| Power dissipation | PD | 267 | W | TC=100C |
| Short circuit withstand time | tsc | 5 | s | VCC 400V, RG = 7, VGE = 15V, Tvj = 150C |
| Operating Junction temperature range | Tvj | -40~175 | C | |
| Storage temperature range | Tstg | -55~150 | C | |
| Soldering temperature (Wave soldering 1.6 mm from case for 10s) | - | 260 | C | |
| Mounting torque, M3 screw | - | 0.6 | Nm | Maximum of mounting processes |
| Thermal Characteristics | ||||
| Thermal resistance junction-to-ambient | RJA | 40 | C/W | |
| Thermal resistance junction-to-case for IGBT | RJC | 0.28 | C/W | |
| Thermal resistance junction-to-case for Diode | RJC | 1.1 | C/W | |
| Electrical Characteristics (Tvj = 25C unless otherwise specified) | ||||
| Collector-emitter breakdown voltage | BVCES | 650 | V | IC = 2mA, VGE = 0V |
| Collector-emitter saturation voltage | VCE(sat) | 1.85 | V | IC = 60A, VGE =15V, Tvj = 25C |
| Collector-emitter saturation voltage | VCE(sat) | 2.6 | V | IC = 60A, VGE =15V, Tvj = 175C |
| Diode forward voltage | VF | 1.45 | V | VGE = 0V, IF = 25A, Tvj = 25C |
| Diode forward voltage | VF | 1.35 | V | VGE = 0V, IF = 25A, Tvj = 175C |
| Gate-emitter threshold voltage | VGE(th) | 4.0 - 6.0 | V | VCE = VGE, IC = 0.5mA |
| Zero gate voltage collector current | ICES | 40 | A | VCE = 650V, VGE = 0V, Tvj = 25C |
| Gate-emitter leakage current | IGES | 100 | nA | VGE = 20V, VCE = 0V |
| Dynamic Characteristics | ||||
| Total gate charge | Qg | 95 | nC | VCE = 520V, IC = 60A, VGE = 15V |
| Gate-emitter charge | Qge | 19 | nC | |
| Gate-collector charge | Qgc | 47 | nC | |
| Input capacitance | Cies | 2327 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Reverse transfer capacitance | Cres | 55 | pF | |
| Output capacitance | Coes | 270 | pF | |
| Internal emitter inductance (measured 5mm from case) | LE | 13.0 | nH | |
| Switching Characteristics (Tvj = 25C) | ||||
| Turn-on delay time | td(on) | 42 | ns | VGE = 15V, VCC = 400V, IC = 60A, RG = 7, Inductive Load |
| Rise time | tr | 54 | ns | |
| Turn-off delay time | td(off) | 142 | ns | |
| Fall time | tf | 40 | ns | |
| Turn-on switching energy | Eon | 0.92 | mJ | |
| Turn-off switching energy | Eoff | 0.53 | mJ | |
| Total switching energy | Ets | 1.45 | mJ | |
| Switching Characteristics (Tvj = 175C) | ||||
| Turn-on delay time | td(on) | 45 | ns | VGE = 15V, VCC = 400V, IC = 60A, RG = 7, Inductive Load |
| Rise time | tr | 58 | ns | |
| Turn-off delay time | td(off) | 152 | ns | |
| Fall time | tf | 35 | ns | |
| Turn-on switching energy | Eon | 1.43 | mJ | |
| Turn-off switching energy | Eoff | 0.53 | mJ | |
| Total switching energy | Ets | 1.96 | mJ | |
| Reverse Recovery Characteristics (Tvj = 25C) | ||||
| Reverse recovery time | trr | 110 | ns | IF = 25A, diF/dt = 500A/ s |
| Reverse recovery current | Irr | 18 | A | |
| Reverse recovery charge | Qrr | 1.10 | C | |
| Reverse Recovery Characteristics (Tvj = 175C) | ||||
| Reverse recovery time | trr | 205 | ns | IF = 25A, diF/dt = 500A/ s |
| Reverse recovery current | Irr | 25 | A | |
| Reverse recovery charge | Qrr | 2.67 | C | |
| Physical Dimensions (TO-247) | ||||
| Dimension | Min(mm) | Max(mm) | ||
| A | 4.70 | 5.31 | ||
| A1 | 2.20 | 2.60 | ||
| A2 | 1.50 | 2.49 | ||
| b | 0.99 | 1.40 | ||
| b1 | 2.59 | 3.43 | ||
| b2 | 1.65 | 2.39 | ||
| c | 0.38 | 0.89 | ||
| D | 20.30 | 21.46 | ||
| D1 | 13.08 | - | ||
| E | 15.45 | 16.26 | ||
| E1 | 13.06 | 14.02 | ||
| E2 | 4.32 | 5.49 | ||
| e | 5.45 | BSC | ||
| L | 19.81 | 20.57 | ||
| L1 | - | 4.50 | ||
| P | 3.50 | 3.70 | ||
| Q | 5.38 | 6.20 | ||
| S | 6.15 | BSC | ||
2410121306_MagnaChip-Semicon-MBQ60T65PESTH_C20613156.pdf
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