High Current MOSFET MASPOWER MS66N85IDB3 850V 66A Low On Resistance Perfect for Robotics and Servo Controls
Key Attributes
Model Number:
MS66N85IDB3
Product Custom Attributes
Drain To Source Voltage:
850V
Current - Continuous Drain(Id):
66A
RDS(on):
83mΩ@15V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
100pF
Output Capacitance(Coss):
8.5nF
Input Capacitance(Ciss):
8.6nF
Pd - Power Dissipation:
1.25kW
Gate Charge(Qg):
220nC@10V
Mfr. Part #:
MS66N85IDB3
Package:
TO-264
Product Description
Product Overview
The MS66N85IDB3/F4 H1.02 Maspower is a high-performance MOSFET designed for demanding power applications. It features an international standard package, low on-resistance (RDS(ON)(typ.) = 70m @ IC = 10A), excellent avalanche ruggedness, low gate charge (QG), and very low on-resistance. This device is ideal for switch-mode and resonant-mode applications, including power supplies, DC-DC converters, PFC circuits, AC and DC motor drivers, and robotics and servo controls.
Product Attributes
- Brand: Maspower
- Model: MS66N85IDB3/F4 H1.02
Technical Specifications
| Parameter | Symbol | MS66N85IDB3 (TO-264) | MS66N85IDF4 (SOT-227) | Unit |
| Electrical Ratings | ||||
| Drain-source voltage (VGS = 0) | VDS | 850 | V | |
| Gate- source voltage | VGS | 30 | ||
| Drain current (continuous) at TC = 25 C | ID | 66 | A | |
| Drain current (continuous) at TC = 100 C | ID | 35 | A | |
| Drain current (pulsed Width Limited by TJM) | IDM | 140 | A | |
| continuous pulse avalanche current | IAR | 33 | A | |
| Single pulse avalanche energy (starting TJ = 25 C, ID = IAR, VDD = 50 V) | EAS | 2500 | mJ | |
| Total dissipation at TC = 25 C | PTOT | 1250 | 1566 | W |
| Operating junction temperature | TJ | -55 to 150 | ||
| Storage temperature | Tstg | |||
| Maximum lead temperature for soldering purpose | TL | 300 | ||
| Isolation Voltage for terminal to case | VISO | 3.0 | KV | |
| Electrical Characteristics (Tvj = 25C unless otherwise specified) | ||||
| On /off states | ||||
| Drain-source breakdown voltage | V(BR)DSS | ID = 1 mA, VGS = 0 | 850 V | |
| Zero gate voltage drain current (VGS = 0) | IDSS | VDS = Max rating | 50 A | |
| VDS=Max rating, TC=125 C | 3000 | |||
| Gate-body leakage current (VDS = 0) | IGSS | VGS = 30 V | 100 nA | |
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 250 A | 3.0 3.8 4.6 V | |
| Static drain-source on resistance | RDS(on) | VGS = 15V, ID = 10A @25 | 70 83 m | |
| Dynamic | ||||
| Input capacitance | Ciss | VDS=25V,f=1MHz,VGS=0 | 8600 pF | |
| Output capacitance | Coss | 8500 | ||
| Reverse transfer capacitance | Crss | 100 | ||
| Gate input resistance | Rg | f=1MHz Gate DC Bias=0 Test signal level=20mV open drain | 1.0 | |
| Forward Transconductance | Gfs | VDS=10V,ID=33A | 24 43 S | |
| Charge | ||||
| Total gate charge | Qg | VDD=425V,ID=25A VGS=10V | 220 nC | |
| Gate-source charge | Qgs | 50 | ||
| Gate-drain charge | Qgd | 120 | ||
| Switching times | ||||
| Turn-on delay time | td(on) | VDD = 425 V, ID = 25A, RG = 10, VGS = 10 V | 38 ns | |
| Rise time | tr | 45 | ||
| Turn-off-delay time | td(off) | 98 | ||
| Fall time | tf | 18 | ||
| Source drain diode | ||||
| Forward on voltage | VSD | ISD= 1A, VGS= 0V | 0.66 1.2 V | |
| Reverse recovery time | trr | ISD= 33A, di/dt= 100A/s VR= 100 V | 210 ns | |
| Reverse recovery charge | Qrr | 2.55 C | ||
| Reverse recovery current | IRRM | 18 A | ||
| Thermal Data | ||||
| Thermal resistance junction-case max | Rthj-case | 0.10 | 0.08 | /W |
| Thermal resistance junction-ambient max | Rthj-amb | 40 | 35 | |
2411220032_MASPOWER-MS66N85IDB3_C41417734.pdf
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