Power semiconductor MASPOWER MS24N80HCE0 designed for in uninterruptible power supplies and adapters
Key Attributes
Model Number:
MS24N80HCE0
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
24A
RDS(on):
205mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
1.8pF
Output Capacitance(Coss):
83pF
Input Capacitance(Ciss):
2.03nF
Pd - Power Dissipation:
227W
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
MS24N80HCE0
Package:
TO-263
Product Description
MS24N80HCE0/C0 Super Junction MOSFET Series
The MS24N80HCE0/C0 is a Super Junction MOSFET series designed for high-efficiency power applications. It features low gate charge, ultra-fast switching, and is 100% avalanche tested. This series is ideal for power factor correction, switched-mode power supplies, uninterruptible power supplies, and low-power chargers and adapters.
Product Attributes
- Brand: Maspower
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Tests conditions | Min | Type | Max | Units |
| Off-Characteristics | ||||||
| Drain-Source Voltage | VDSS | 800 | - | - | V | |
| Breakdown Voltage Temperature Coefficient | BVDSS /TJ | ID=250A, referenced to 25 | - | 0.11 | - | V/ |
| Drain cut-off current | IDSS | VDS=800V,VGS=0V Tj=25 | - | - | 1 | A |
| Drain cut-off current | IDSS | VDS=800V,VGS=0V Tj=150 | - | - | 100 | A |
| Gate-body leakage current,forward | IGSSF | VDS=0V,VGS=30V | - | - | 100 | nA |
| Gate-body leakage current,reverse | IGSSR | VDS=0V,VGS=-30V | -100 | - | - | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 2.5 | 3.5 | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=10A Tj=25 | - | 0.205 | 0.24 | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=100V, VGS=0V, f=10kHz | - | 2030 | - | pF |
| Output capacitance | Coss | - | 83 | - | pF | |
| Reverse transfer capacitance | Crss | - | 1.8 | - | pF | |
| Forward transconductance | gfs | VDS=30V,ID=12A | - | 24 | - | S |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=400V,ID=24A, RG=4.7 | - | 20 | - | ns |
| Turn-On rise time | tr | - | 39 | - | ns | |
| Turn-Off delay time | Td(off) | - | 56 | - | ns | |
| Turn-Off Fall time | tf | - | 19 | - | ns | |
| Total Gate Charge | Qg | VDD=400V, ID=24A VGS=10V | - | 46 | - | nC |
| Gate-Source charge | Qgs | - | 13 | - | nC | |
| Gate-Drain charge | Qgd | - | 21 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IF=1A (note 3) | - | 0.7 | 1.2 | V |
| Reverse recovery time | trr | VR=400V,IF=12A dIF/dt=130A/us | - | 280 | - | ns |
| Reverse recovery charge | Qrr | - | 4.8 | - | uC | |
| Peak reverse recovery current | Irrm | - | 24 | - | A | |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25 | 800 | V | ||
| Drain Current -continuous | ID | Tc=25 | 24 | A | ||
| Drain Current - pulse note 1 | IDM | 96 | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy note 2 | EAS | 690 | mJ | |||
| Power Dissipation | PD | TC=25 | 227 | W | ||
| Power Dissipation Derate | -Derate above 25 | 1.67 | W/ | |||
| Operating and Storage Temperature Range | Tj,TSTG | -55 | +150 | |||
| Continuous diode forward current | IS | 24 | A | |||
| Diode pulse current | IS Pulse | 96 | A | |||
| Maximum lead temperature for soldering purposes | TL | 260 | ||||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | TO-263 | 0.55 | /W | ||
| Thermal Resistance, Junction-to-Case | RJC | TO-247 | 0.55 | /W | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | /W | |||
2411261900_MASPOWER-MS24N80HCE0_C19724675.pdf
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