N Channel Small Signal MOSFET LRC L2N7002SWT1G with SC 70 Package and RoHS Compliance Certifications
Key Attributes
Model Number:
L2N7002SWT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
380mA
RDS(on):
2.8Ω@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
35pF
Pd - Power Dissipation:
420mW
Gate Charge(Qg):
440pC@4.5V
Mfr. Part #:
L2N7002SWT1G
Package:
SC-70
Product Description
Product Overview
The L2N7002SWT1G and S-L2N7002SWT1G are N-Channel Small Signal MOSFETs designed for various applications including low-side load switching, level shift circuits, DC-DC converters, and portable devices like DSCs, PDAs, and cell phones. These MOSFETs are RoHS compliant and Halogen Free, with the S- prefix variant suitable for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. They offer ESD protection and low RDS(on).
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Qualification: AEC-Q101 qualified and PPAP capable (S- prefix models)
- Package Type: SC-70 (SOT-323)
- Technology: N-Channel
- Certifications: RoHS, Halogen Free, AEC-Q101 (S- prefix)
Technical Specifications
| Parameter | Symbol | Limits | Unit | Model | Marking | Shipping |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C) | ||||||
| DrainSource Voltage | VDSS | 60 | V | L2N7002SWT1G, S-L2N7002SWT1G | 701 | 3000/Tape&Reel |
| Gate-Source Voltage | VGS | 20 | V | L2N7002SWT1G, S-L2N7002SWT1G | 701 | 10000/Tape&Reel |
| Pulsed Drain Current (tp=10s) | IDM | 1.5 | A | L2N7002SWT3G | - | - |
| Source Current (Body Diode) | IS | 380 | mAmps | L2N7002SWT1G, S-L2N7002SWT1G | - | - |
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | ||||||
| DrainSource Breakdown Voltage (VGS = 0, ID = 250A) | VBRDSS | 60 | V | - | - | - |
| Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 V) | IDSS | - | 2.8 | A | - | - |
| GateBody Leakage Current, Forward (VGS = 20 V) | IGSSF | - | 10 | A | - | - |
| GateBody Leakage Current, Reverse (VGS = - 20 V) | IGSSR | - | 10 | A | - | - |
| Gate Threshold Voltage (VDS = VGS, ID = 250A) | VGS(th) | 1.0 | 2.0 | V | - | - |
| Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mA) | RDS(on) | - | 0.44 | - | - | |
| Static DrainSource OnState Resistance (VGS = 4.5 V, ID = 200 mA) | RDS(on) | - | 1.0 | - | - | |
| Forward Transconductance (VDS = 5.0 V, ID = 200 mA) | gfs | - | 35 | mS | - | - |
| Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) | Ciss | - | 71 | pF | - | - |
| Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) | Coss | - | 10 | pF | - | - |
| Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) | Crss | - | 5 | pF | - | - |
| Diode Forward OnVoltage (IS = 0.5A, VGS = 0 V) | VSD | - | 0.85 | V | - | - |
| OUTLINE AND DIMENSIONS | ||||||
| Package | DIM | MIN | NOR | MAX | Unit | REF |
| SC70 | A | 0.80 | 0.95 | 1.00 | mm | - |
| SC70 | A1 | 0.00 | 0.05 | 0.10 | mm | - |
| SC70 | b | 0.30 | 0.35 | 0.40 | mm | - |
| SC70 | c | 0.10 | 0.15 | 0.25 | mm | - |
| SC70 | D | 1.80 | 2.05 | 2.20 | mm | - |
| SC70 | E | 1.15 | 1.30 | 1.35 | mm | - |
| SC70 | He | 2.00 | 2.10 | 2.40 | mm | - |
| SC70 | e | 1.20 | 1.30 | 1.40 | mm | - |
| SC70 | L | 0.20 | 0.35 | 0.56 | mm | - |
| SC70 | X | - | 0.70 | - | BSC | - |
| SC70 | Y | - | 0.90 | - | BSC | - |
1912111437_LRC-L2N7002SWT1G_C383164.pdf
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