High Density Cell Design 30V N Channel MOSFET LRC LN4812LT1G with RoHS and Halogen Free Compliance
Product Overview
This document details the LN4812LT1G and S-LN4812LT1G, 30V N-Channel Enhancement-Mode MOSFETs from Leshan Radio Company, LTD. These MOSFETs feature high density cell design for ultra low on-resistance, advanced trench process technology, and high power and current handling capability. The S-prefix variants are designed for automotive and other applications requiring unique site and control change requirements, are AEC-Q101 qualified, and PPAP capable. They comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Qualification (S-prefix): AEC-Q101 Qualified, PPAP Capable
- Technology: Advanced Trench Process
- Design: High Density Cell Design
- Package Type: SOT23 (TO-236)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| DEVICE MARKING AND ORDERING INFORMATION | |||||
| LN4812LT1G | S-LN4812LT1G | ||||
| Marking | N48 | N48 | |||
| Shipping | 3000/Tape&Reel | 10000/Tape&Reel | |||
| MAXIMUM RATINGS (Ta = 25C) | |||||
| DrainSource Voltage | VDSS | 30 | V | ||
| GatetoSource Voltage Continuous | VGS | -20 | +20 | V | |
| Continuous Drain Current (TA = 25C) | ID | 6 | A | ||
| Pulsed Drain Current (Note 1) | IDM | 30 | A | ||
| Maximum Power Dissipation | PD | 1.4 | W | ||
| Thermal Resistance, JunctiontoAmbient (Note 2) | RJA | 90 | C/W | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | +150 | C | |
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | |||||
| OFF CHARACTERISTICS | |||||
| DrainSource Breakdown Voltage (VGS = 0, ID = 250A) | V(BR)DSS | 30 | - | - | V |
| Zero Gate Voltage Drain Current (VDS=24V, VGS=0V) | IDSS | - | - | 1 | A |
| GateBody Leakage Current, Forward (VDS = 0 V, VGS = 20 V) | IGSSF | - | - | 100 | nA |
| GateBody Leakage Current, Reverse (VDS = 0 V, VGS = -20 V) | IGSSR | - | - | -100 | nA |
| ON CHARACTERISTICS (Note 3) | |||||
| Gate Threshold Voltage (VDS = VGS, ID = 250A) | VGS(th) | - | 1.5 | - | V |
| Static DrainSource OnState Resistance (VGS = 10 V, ID = 6 A) | RDS(on) | - | - | 38 | m |
| Static DrainSource OnState Resistance (VGS = 4.5 V, ID = 5 A) | RDS(on) | - | - | 52 | m |
| Forward Transconductance (VDS=5V, ID=6.9A) | gfs | - | 15.4 | - | S |
| DYNAMIC CHARACTERISTICS | |||||
| Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) | Ciss | - | 610 | - | pF |
| Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) | Coss | - | 100 | - | pF |
| Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) | Crss | - | 35 | - | pF |
| SWITCHING CHARACTERISTICS | |||||
| Turn-On Delay Time | td(on) | - | 14 | - | ns |
| Rise Time | tr | - | 9 | - | ns |
| Turn-Off Delay Time | td(off) | - | 22 | - | ns |
| Fall Time | tf | - | 5 | - | ns |
| SOURCEDRAIN DIODE CHARACTERISTICS | |||||
| Forward Voltage (VGS = 0 V, ISD = 1 A) | VSD | - | - | 1.3 | V |
| Max. Diode Forward Current | IS | - | - | 6 | A |
| Model | DrainSource Voltage (VDSS) | RDS(ON) @ VGS=4.5V, IDS=5A | RDS(ON) @ VGS=10V, IDS=6A |
|---|---|---|---|
| LN4812LT1G | 30V | 52m | 38m |
| S-LN4812LT1G | 30V | 52m | 38m |
| Dimension | Millimeters (Min) | Millimeters (Nom) | Millimeters (Max) | Inches (Min) | Inches (Nom) | Inches (Max) |
|---|---|---|---|---|---|---|
| A | 0.89 | 1.00 | 1.11 | 0.035 | 0.04 | 0.044 |
| A1 | 0.015 | 0.05 | 0.10 | 0.001 | 0.002 | 0.004 |
| b | 0.37 | 0.44 | 0.50 | 0.015 | 0.018 | 0.02 |
| c | 0.09 | 0.11 | 0.13 | 0.004 | 0.004 | 0.005 |
| D | 2.80 | 2.90 | 3.04 | 0.110 | 0.114 | 0.120 |
| E | 2.60 | 2.70 | 2.80 | 0.102 | 0.106 | 0.110 |
| HE | 1.70 | 1.80 | 1.90 | 0.067 | 0.071 | 0.075 |
| L | 0.30 | 0.40 | 0.50 | 0.012 | 0.016 | 0.020 |
| L1 | 0.00 | 0.10 | 0.20 | 0.000 | 0.004 | 0.008 |
| 0 | 10 | 0 | 10 |
2410010202_LRC-LN4812LT1G_C559076.pdf
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