High Density Cell Design 30V N Channel MOSFET LRC LN4812LT1G with RoHS and Halogen Free Compliance

Key Attributes
Model Number: LN4812LT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
52mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
610pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
-
Mfr. Part #:
LN4812LT1G
Package:
SOT-23E
Product Description

Product Overview

This document details the LN4812LT1G and S-LN4812LT1G, 30V N-Channel Enhancement-Mode MOSFETs from Leshan Radio Company, LTD. These MOSFETs feature high density cell design for ultra low on-resistance, advanced trench process technology, and high power and current handling capability. The S-prefix variants are designed for automotive and other applications requiring unique site and control change requirements, are AEC-Q101 qualified, and PPAP capable. They comply with RoHS requirements and are Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Qualification (S-prefix): AEC-Q101 Qualified, PPAP Capable
  • Technology: Advanced Trench Process
  • Design: High Density Cell Design
  • Package Type: SOT23 (TO-236)

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit
DEVICE MARKING AND ORDERING INFORMATION
LN4812LT1G S-LN4812LT1G
Marking N48 N48
Shipping 3000/Tape&Reel 10000/Tape&Reel
MAXIMUM RATINGS (Ta = 25C)
DrainSource Voltage VDSS 30 V
GatetoSource Voltage Continuous VGS -20 +20 V
Continuous Drain Current (TA = 25C) ID 6 A
Pulsed Drain Current (Note 1) IDM 30 A
Maximum Power Dissipation PD 1.4 W
Thermal Resistance, JunctiontoAmbient (Note 2) RJA 90 C/W
Junction and Storage Temperature TJ,Tstg -55 +150 C
ELECTRICAL CHARACTERISTICS (Ta= 25C)
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 250A) V(BR)DSS 30 - - V
Zero Gate Voltage Drain Current (VDS=24V, VGS=0V) IDSS - - 1 A
GateBody Leakage Current, Forward (VDS = 0 V, VGS = 20 V) IGSSF - - 100 nA
GateBody Leakage Current, Reverse (VDS = 0 V, VGS = -20 V) IGSSR - - -100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (VDS = VGS, ID = 250A) VGS(th) - 1.5 - V
Static DrainSource OnState Resistance (VGS = 10 V, ID = 6 A) RDS(on) - - 38 m
Static DrainSource OnState Resistance (VGS = 4.5 V, ID = 5 A) RDS(on) - - 52 m
Forward Transconductance (VDS=5V, ID=6.9A) gfs - 15.4 - S
DYNAMIC CHARACTERISTICS
Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) Ciss - 610 - pF
Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) Coss - 100 - pF
Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) Crss - 35 - pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time td(on) - 14 - ns
Rise Time tr - 9 - ns
Turn-Off Delay Time td(off) - 22 - ns
Fall Time tf - 5 - ns
SOURCEDRAIN DIODE CHARACTERISTICS
Forward Voltage (VGS = 0 V, ISD = 1 A) VSD - - 1.3 V
Max. Diode Forward Current IS - - 6 A
Model DrainSource Voltage (VDSS) RDS(ON) @ VGS=4.5V, IDS=5A RDS(ON) @ VGS=10V, IDS=6A
LN4812LT1G 30V 52m 38m
S-LN4812LT1G 30V 52m 38m
Dimension Millimeters (Min) Millimeters (Nom) Millimeters (Max) Inches (Min) Inches (Nom) Inches (Max)
A 0.89 1.00 1.11 0.035 0.04 0.044
A1 0.015 0.05 0.10 0.001 0.002 0.004
b 0.37 0.44 0.50 0.015 0.018 0.02
c 0.09 0.11 0.13 0.004 0.004 0.005
D 2.80 2.90 3.04 0.110 0.114 0.120
E 2.60 2.70 2.80 0.102 0.106 0.110
HE 1.70 1.80 1.90 0.067 0.071 0.075
L 0.30 0.40 0.50 0.012 0.016 0.020
L1 0.00 0.10 0.20 0.000 0.004 0.008
0 10 0 10

2410010202_LRC-LN4812LT1G_C559076.pdf

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