Power device LRC LP2317DT2AG 20V P Channel MOSFET with RoHS compliance and halogen free construction
Key Attributes
Model Number:
LP2317DT2AG
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8.8A
RDS(on):
36mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
113pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.435nF@15V
Pd - Power Dissipation:
3W
Gate Charge(Qg):
30nC@4.5V
Mfr. Part #:
LP2317DT2AG
Package:
U-DFN2020-6
Product Description
Product Overview
The LP2317DT2AG is a 20V P-Channel MOSFET designed for various power management applications. It features low RDS(ON) due to trench technology, offering efficient performance with low thermal impedance and fast switching speeds. This device is RoHS compliant and Halogen Free. The 'S-' prefix variant is AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications with unique site and control change requirements. Key applications include load switches, DC/DC conversion, and motor drives.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Qualification: AEC-Q101 qualified (S- prefix variant)
- PPAP Capable: Yes (S- prefix variant)
- Technology: Trench technology
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| Device | LP2317DT2AG 20V P-Channel (D-S) MOSFET | |||||
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS = 0V, ID =-250uA | ||
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.3 | -1.4 | V | VDS =VGS , ID =-250A |
| Gate Leakage Current | IGSS | 100 | nA | VDS =0V, VGS =8V | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | -20 | A | VDS =-16V, VGS =0V | |
| On-State Drain Current | ID(on) | -8 | A | VDS = -5 V, VGS = -4.5 V (Note 3) | ||
| Drain-Source On-Resistance | RDS(ON) | 26 | m | VGS = -4.5 V; ID = -7 A (Note 3) | ||
| Drain-Source On-Resistance | RDS(ON) | 36 | m | VGS = -2.5 V; ID = -5.6 A (Note 3) | ||
| Diode Forward Voltage | VSD | -0.4 | V | IS =-2.5 A, VGS =0V (Note 3) | ||
| Forward Transconductance | gfs | 126 | mS | VDS = -15 V, ID = -7 A (Note 3) | ||
| Total Gate Charge | Qg | 1435 | nC | (Note 4) | ||
| Gate-Source Charge | Qgs | 35 | nC | (Note 4) | ||
| Gate-Drain Charge | Qgd | 6 | nC | (Note 4) | ||
| Turn-On Delay Time | td(on) | 4 | ns | (Note 4) | ||
| Rise Time | tr | 6 | ns | (Note 4) | ||
| Turn-Off Delay Time | td(off) | 12 | ns | (Note 4) | ||
| Fall Time | tf | 85 | ns | (Note 4) | ||
| Input Capacitance | Ciss | 113 | pF | (VDS = -10 V, VGS = -4.5 V,ID = -7 A) (Note 4) | ||
| Output Capacitance | Coss | 30 | pF | (VDS = -10 V, VGS = -4.5 V,ID = -7 A) (Note 4) | ||
| Reverse Transfer Capacitance | Crss | 4 | pF | (VDS = -10 V, VGS = -4.5 V,ID = -7 A) (Note 4) | ||
| Maximum Ratings: Gate-Source Voltage | VGS | 20 | V | |||
| Maximum Ratings: Drain-Source Voltage | VDS | -20 | V | |||
| Maximum Ratings: Continuous Drain Current | ID | -8.8 | A | TA = 25 (Note 1) | ||
| Maximum Ratings: Continuous Drain Current | ID | -5.6 | A | TA = 70 (Note 1) | ||
| Maximum Ratings: Pulsed Drain Current | IDM | -40 | A | (Note 2) | ||
| Maximum Ratings: Power Dissipation | PD | 1.9 | W | TA = 25 (Note 1) | ||
| Maximum Ratings: Continuous Source Current | IS | -3 | A | Diode Conduction (Note 1) | ||
| Maximum Ratings: Operating Junction and Storage Temperature Range | TJ , Tstg | -55 | +150 | |||
| Maximum Ratings: Junction-to-Ambient Thermal Resistance | RqJA | 90 | /W | (Note 1) | ||
| Device Marking | L1 | |||||
| Shipping | 4000/Tape&Reel | |||||
| Outline Dimensions | mm | DFN2020-6S |
Notes:
1. Surface Mounted on 1 x 1 FR4 Board.
2. Pulse width limited by maximum junction temperature.
3. Pulse test: PW 300us ,duty cycle 2%.
4. Guaranteed by design, not subject to production testing.
2111041830_LRC-LP2317DT2AG_C383254.pdf
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