N channel Power MOSFET MASPOWER MS55N100HGB3 featuring low on resistance and 1000V drain source voltage
Key Attributes
Model Number:
MS55N100HGB3
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-40℃~+150℃
RDS(on):
280mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
27pF
Number:
-
Output Capacitance(Coss):
758pF
Pd - Power Dissipation:
1.042kW
Input Capacitance(Ciss):
8.442nF
Gate Charge(Qg):
200nC@10V
Mfr. Part #:
MS55N100HGB3
Package:
TO-264
Product Description
Product Overview
The MS55N100HGB3 is a high-performance N-channel Power MOSFET from Maspower, designed for high power density applications. It features a VDS of 1000V, a continuous drain current of 55A, and a low on-resistance (RDS(on)) of less than 0.28. This device is avalanche tested and current rated, offering a fast intrinsic rectifier for efficient operation. Its robust design makes it easy to mount and space-saving, suitable for demanding power applications.
Product Attributes
- Brand: Maspower
- Model: MS55N100HGB3
- Package: TO-264
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 1000 | V | |||
| Gate-Source Voltage | VGSS | ±30 | V | |||
| Drain Current-continuous | ID | 55 | A | |||
| Drain Current-pulse | IDM | (1) | 110 | A | ||
| Avalanche current | IAR | 15 | A | |||
| Single Pulsed Avalanche Energy | EAS | (2) | 2368 | mJ | ||
| Maximum Power Dissipation | PD | 1042 | W | |||
| Operating Temperature Range | TJ | -40 | +150 | |||
| Storage Temperature Rang | TSTG | -55 | +150 | |||
| Maximum lead temperature for soldering purposes | TL | 300 | ||||
| Minimum isolation voltage for case to terminal | VISO | 3.0 | KV | |||
| Electrical Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=3mA,VGS=0V | 1000 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS,VGS=0V | - | - | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±30V,VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=10A (3) | - | 211 | 280 | mΩ |
| Forward Transconductance | gfs | VDS=10V,ID=10A (note3) | - | 16 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | - | 8442 | - | pF |
| Output capacitance | Coss | - | 758 | - | pF | |
| Reverse transfer capacitance | Crss | - | 27 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDS=500V,ID=27A, Rg=25Ω,VGS=10V (note3,4) | - | 45 | - | ns |
| Turn-On rise time | tr | - | 25 | - | ns | |
| Turn-Off delay time | td(Off) | - | 120 | - | ns | |
| Turn-Off rise time | tf | - | 18 | - | ns | |
| Total Gate Charge | Qg | VDS=500V,ID=27A, VGS=10V (note3,4) | - | 200 | - | nC |
| Gate-Source charge | Qgs | - | 42 | - | nC | |
| Gate-Drain charge | Qg d | - | 114 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Maximum Continuous Drain-Source Diode Forward Curret | VSD | VGS=0V,IS=1A | - | 0.65 | 1.2 | V |
| Diode Forward Current | IS | TC=25 | - | - | 55 | A |
| Reverse recovery time | Trr | IS=27A,-dIF/dt=100A/μs VR=100V,VGS=0V | - | 0.3 | - | µs |
| Reverse Recovery Charge | Qrr | - | 8.2 | - | µC | |
| Reverse recovery current | IRR | - | 16.5 | - | A | |
| Thermal Characteristic | ||||||
| Thermal Resistance,junction to Case | Rth(j-C) | 0.12 | /W | |||
| Thermal Resistance,junction-Ambient | Rth(C-A) | 32.5 | ||||
2411220032_MASPOWER-MS55N100HGB3_C41417733.pdf
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