P Channel TrenchFET Power MOSFET MCC SI2307 TP with UL 94 V0 Flammability Rating and RoHS Compliance

Name: P Channel TrenchFET Power MOSFET MCC SI2307 TP with UL 94 V0 Flammability Rating and RoHS Compliance
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: SI2307-TP
Availability: InStock

Key Attributes

Model Number: SI2307-TP

Product Custom Attributes

Drain To Source Voltage:

30V

Current - Continuous Drain(Id):

2.7A

Operating Temperature -:

-55℃~+150℃@(Tj)

RDS(on):

135mΩ@4.5V,2.6A

Gate Threshold Voltage (Vgs(th)):

Reverse Transfer Capacitance (Crss@Vds):

Number:

1 P-Channel

Input Capacitance(Ciss):

340pF@15V

Pd - Power Dissipation:

1.1W

Gate Charge(Qg):

6.2nC@4.5V

Mfr. Part #:

SI2307-TP

Package:

SOT-23

Product Description

Product Overview

The SI2307 is a P-Channel TrenchFET Power MOSFET designed for various applications. It meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. Available in a lead-free finish and RoHS compliant, this MOSFET offers a wide operating junction temperature range of -55C to +150C. It is suitable for use in applications where high performance and reliability are required.

Product Attributes

Brand: MCCSEMI
Type: P-Channel MOSFET
Flammability Rating: UL 94 V-0
Moisture Sensitivity Level: 1
Compliance: Lead Free Finish/RoHS Compliant
Halogen Free: Available upon request (by adding "-HF" suffix)
Package: SOT-23

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions
Maximum Ratings
Drain-Source Voltage	VDS	-30	V	VGS=0V
Gate-Source Voltage	VGS	20	V
Continuous Drain Current	ID	-2.7	A
Continuous Source-Drain Diode Current	IS	-0.91	A
Power Dissipation	PD	1.1	W
Operating Junction Temperature Range		-55 to +150	C
Storage Temperature		-55 to +150	C
Thermal Resistance Junction to Ambient (Note 1)		114	C/W
Electrical Characteristics (Ta=25 unless otherwise specified)
Drain-Source Breakdown Voltage	V(BR)DSS	-30	V	VGS=0V, ID=-250A
Gate-Threshold Voltage	VGS(th)	-1.0 to -3.0	V	VDS=VGS, ID=-250A
Gate-Body Leakage Current	IGSS	100	nA	VGS =20V, VDS=0V
Zero Gate Voltage Drain Current	IDSS	-1	A	VDS =-30V, VGS=0V
		-10	A	VDS=-30V,VGS=0V,TJ=55oC
Drain-Source On-Resistance	RDS(on)	110	m	VGS=-4.5V, ID=-2.5A
		73	m	VGS=-10V, ID=-3.5A
Forward Tranconductance	gFS	7	S	VDS=-10V, ID=-3.5A
Input Capacitance	Ciss	340	pF	VDS=-15V,VGS=0V, f=1MHz
Output Capacitance	Coss	67	pF
Reverse Transfer Capacitance	Crss	51	pF
Total Gate Charge	Qg	4.1 to 6.2	nC	VDS=-15V,VGS=-4.5V,ID=-2.5A
Gate-Source Charge	Qgs	1.3	nC
Gate-Drain Charge	Qg d	1.8	nC
Gate Resistance	Rg	10
Dynamic Characteristics (Note 3)
Turn-On Delay Time	td(on)	40 to 60	ns	VDD=-15V,VGEN=-4.5V,RL=15, ID=-1A,RG=1
Turn-On Rise Time	tr	40 to 60	ns
Turn-Off Delay Time	td(off)	20 to 40	ns
Turn-Off Fall Time	tf	17 to 30	ns
Drain-Source Body Diode Characteristics
Body Diode Voltage	VSD	-0.8 to -1.2	V	IS=-0.75A,VGS=0

Note 1: Surface Mounted on 1" x 1" FR4 Board.

Note 2: Pulse Test: Pulse Width300s, Duty Cycle2%.

Note 3: Guaranteed by Design, Not Subject to Production Testing.

Ordering Information:

Device	Packing	Part Number
SI2307	Tape&Reel: 3Kpcs/Reel	-TP

Note: Adding "-HF" Suffix For Halogen Free, e.g. Part Number-TP-HF.

2008031237_MCC-SI2307-TP_C668998.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.