switching MASPOWER MS100N60ICB3 N channel MOSFET with low RDSon and high current handling capability
Key Attributes
Model Number:
MS100N60ICB3
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
100A
RDS(on):
33.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12.4pF
Number:
1 N-channel
Pd - Power Dissipation:
1.041kW
Output Capacitance(Coss):
181pF
Input Capacitance(Ciss):
8.395nF
Gate Charge(Qg):
170nC@10V
Mfr. Part #:
MS100N60ICB3
Package:
TO-264
Product Description
Product Overview
The MS100N60ICB3(C0) from Maspower is a high-performance N-channel MOSFET designed for demanding power applications. It features ultra-low RDS(on) of 33.5m (typ.) and ultra-low gate charge, along with 100% UIS tested reliability. This RoHS compliant component is ideal for power factor correction (PFC), switched mode power supplies (SMPS), and uninterruptible power supply (UPS) systems.
Product Attributes
- Brand: Maspower
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | TO-264 | TO-247 | Unit | Notes |
| Drain-Source Voltage | VDSS | 650 | V | ||
| Transient Gate-Source Voltage | VGSM | 30 | V | ||
| Continuous Gate-Source Voltage (DC) | VGSS | 20 | V | ||
| Drain Current - continuous (TC=25) | ID | 100 | A | ||
| Drain Current - continuous (TC=100) | ID | 50 | A | ||
| Drain Current - pulse | IDM | 400 | A | 1 | |
| Avalanche current-single pulse | IAS | 16 | A | ||
| Single Pulsed Avalanche Energy | EAS | 64 | mJ | 2 | |
| Repetitive Avalanche current | IAR | 13 | A | ||
| Repetitive Avalanche Energy | EAR | 42.25 | mJ | ||
| Power Dissipation | PD | 1041 | 390 | W | |
| Operating and Storage Temperature Range | TJ,TSTG | -55~+150 | |||
| Solding temperature,wave solding only allowed at leads.(1.6mm for 10s) | Tsold | 260 | |||
| Gate Threshold Voltage | VGS(th) | 3.0 ~ 4.6 | V | VDS=VGS,ID=250uA | |
| Static Drain-Source On-Resistance | RDS(ON) | 33.5 ~ 43 | m | VGS=10V, ID=40A, TC=25 | |
| Static Drain-Source On-Resistance | RDS(ON) | 77 | m | VGS=10V, ID=40A, TC=125 | |
| Forward Transconductance | gfs | 95.7 | S | VDS=10V,ID=40A (note 4) | |
| Gate resistance | Rg | 4.28 | F=1.0MHz open drain | ||
| Input capacitance | Ciss | 8395 | pF | VDS=400V, VGS=0V, f=250kHz | |
| Output capacitance | Coss | 181 | pF | ||
| Reverse transfer capacitance | Crss | 12.4 | pF | ||
| Turn-On delay time | td(on) | 54 | ns | VDD=300V,ID=25A, VGS=10V,RG=3.3 (note 4,5) | |
| Turn-On rise time | tr | 67 | ns | ||
| Turn-Off delay time | td(off) | 147 | ns | ||
| Turn-Off Fall time | tf | 50 | ns | ||
| Total Gate Charge | Qg | 170 | nC | VDS=300V,ID=25A, VGS=0 to 10V (note4,5) | |
| Gate-Source charge | Qgs | 61.9 | nC | ||
| Gate-Drain charge | Qg d | 51 | nC | ||
| Gate-plateau voltage | Vp | 6.5 | V | ||
| Continuous Diode Forward Current | IS | 80 | A | TC=25 | |
| Diode Pulsed Current | ISM | 240 | A | TC=25 | |
| Drain-Source Diode Forward Voltage | VSD | 0.64 ~ 1.2 | V | VGS=0V,IS=1A | |
| Reverse recovery time | trr | 199.6 | ns | VGS=0V,IS=25A dIF/dt=100A/us VR=300V (note 4) | |
| Reverse recovery charge | Qrr | 1996 | nC | ||
| Peak reverse recovery current | IRRM | 19 | A | ||
| Thermal Resistance, Junction-to-Case,Max | Rth(J-C) | 0.12 | 0.32 | /W | |
| Thermal Resistance, Junction-to-Ambient,Max | Rth(J-A) | 30 | 52 | /W | |
2508261540_MASPOWER-MS100N60ICB3_C50726499.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
