Halogen Free RoHS Compliant 100V N Channel MOSFET LRC LN7612HDT1WG for Networking Load Switching and LED Lighting
Key Attributes
Model Number:
LN7612HDT1WG
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-50℃~+150℃
RDS(on):
11mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.9pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.95nF@50V
Pd - Power Dissipation:
61W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
LN7612HDT1WG
Package:
DFN5060-8B
Product Description
Product Overview
The LN7612HDT1WG is a 100V N-Channel MOSFET designed for applications such as networking, load switching, and LED lighting. It offers improved dv/dt capability, fast switching, and is 100% EAS guaranteed. The material complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Line: LN7612HDT1WG
- Channel Type: N-Channel
- Material Compliance: RoHS, Halogen Free
- Device Marking: LN7612H
- Packaging: 3000/Tape&Reel
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25C) | ||||||
| Drain-to-Source Voltage | VDS | 100 | V | |||
| Gate-to-Source Voltage | VGS | ±20 | V | |||
| Pulsed Drain Current | IDM | A | Repetitive Rating: Pulsed width limited by maximum junction temperature. | |||
| Avalanche Current (L=0.1mH) | IAS | A | ||||
| Avalanche Energy (L=0.1mH) | EAS | 220 | mJ | 100% EAS Guaranteed | ||
| Power Dissipation | PD | 61 | W | TA = 25 | ||
| Power Dissipation | PD | 55 | W | TC = 25 | ||
| Continuous Drain Current | ID | 34 | A | TC=25 | ||
| Continuous Drain Current | ID | 22 | A | TC=100 | ||
| Operating Junction and Storage Temperature Range | Tj/Tstg | -50 | +150 | |||
| Thermal Characteristics | ||||||
| Junction-to-Ambient | Rthja | 62 | /W | |||
| Junction-to-Case | Rthjc | 2 | /W | |||
| Electrical Characteristics (Ta= 25C) | ||||||
| Drain to Source Breakdown Voltage | VDSS | 100 | V | VGS =0V, ID =250A | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS =80V,VGS =0V,TJ =25 | ||
| Gate-Body leakage current | IGSS | ±100 | nA | VDS =0V, VGS = ±20V | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS , ID = 250µA | |
| Drain-to-Source On-Resistance | RDS(ON) | 8.5 | 11 | mΩ | VGS = 10 V, ID = 1 A | |
| Gate Resistance | Rg | 0.7 | Ω | |||
| Total Gate Charge | Qg | 35 | nC | VDD =50V , VGS =10V , RG =6Ω,ID =1A | ||
| Gate to Source Charge | Qgs | 7.7 | nC | (VDD =50V , VGS =10V , RG =6Ω,ID =1A) | ||
| Gate to Drain Charge | Qgd | 12 | nC | (VDD =50V , VGS =10V , RG =6Ω,ID =1A) | ||
| Turn-on Delay Time | td(on) | 14.2 | nS | (VDS =50V , VGS =10V , RG =6Ω,ID =1A) | ||
| Rise Time | tr | 20.8 | nS | (VDS =50V , VGS =10V , RG =6Ω,ID =1A) | ||
| Turn-Off Delay Time | td(off) | 42 | nS | (VDS =50V , VGS =10V , RG =6Ω,ID =1A) | ||
| Fall Time | tf | 30 | nS | (VDS =50V , VGS =10V , RG =6Ω,ID =1A) | ||
| Input Capacitance | Ciss | 1950 | pF | (VDS=0V,VGS=0V,f=1.0MHz) | ||
| Output Capacitance | Coss | 273 | pF | (VDS=50V , VGS =10V , ID =10A) | ||
| Reverse Transfer Capacitance | Crss | 4.9 | pF | (VDS=50V , VGS =10V , ID =10A) | ||
| Diode Forward Voltage | VSD | 1.3 | V | VGS =0V , IS =0.5A | ||
| Package Information | ||||||
| Package Type | DFN5060-8B | |||||
| Dimensions | DIM (mm) | MIN | NOR | MAX | ||
| A | 0.90 | 1.00 | 1.10 | mm | ||
| A1 | 0.00 | 0.02 | 0.05 | mm | ||
| E | 6.00 | 6.15 | 6.30 | mm | ||
| E1 | 5.66 | 5.76 | 5.86 | mm | ||
| E2 | 3.40 | 3.50 | 3.60 | mm | ||
| D | 4.95 | 5.10 | 5.25 | mm | ||
| D1 | 4.80 | 4.90 | 5.00 | mm | ||
| D2 | 3.76 | 3.86 | 3.96 | mm | ||
| b | 0.30 | 0.35 | 0.40 | mm | ||
| B | 0.36 | 0.41 | 0.46 | mm | ||
| L | 0.56 | 0.66 | 0.76 | mm | ||
| e | 1.27BSC | |||||
| c | 0.254REF. | |||||
2410010403_LRC-LN7612HDT1WG_C2986755.pdf
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