Surface Mount N Channel MOSFET LRC LN2312LT1G with Low On Resistance and 2.5V Gate Drive Capability
Key Attributes
Model Number:
LN2312LT1G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
41mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
600mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
1 N-channel
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
500pF
Pd - Power Dissipation:
750mW
Mfr. Part #:
LN2312LT1G
Package:
SOT-23
Product Description
Product Overview
The LN2312LT1G and S-LN2312LT1G are N-Channel Enhancement-Mode MOSFETs from LESHAN RADIO COMPANY, LTD., designed for high-density cell applications to achieve ultra-low on-resistance. These devices feature advanced trench process technology and are suitable for various applications requiring efficient power management. They offer a 2.5V gate drive capability and a lower on-resistance, available in a surface mount SOT-23 package. The S-prefix variants are AEC-Q101 Qualified and PPAP Capable, meeting automotive requirements.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Technology: Advanced trench process technology
- Cell Design: High Density Cell Design
- Package: SOT 23 (TO236AB)
- Compliance: RoHS requirements
- Automotive Qualification (S-prefix): AEC-Q101 Qualified and PPAP Capable
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current (TA=25) | ID@TA=25 | VGS @ 4.5V | 3.4 | A | ||
| Continuous Drain Current (TA=70) | ID@TA=70 | VGS @ 4.5V | 4.9 | A | ||
| Pulsed Drain Current | IDM | 15 | A | |||
| Total Power Dissipation (TA=25) | PD@TA=25 | 0.75 | W | |||
| Linear Derating Factor | 1.3 | W/ | ||||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Thermal Resistance | ||||||
| Junction-ambient | Rthj-a | 3 | 140 | /W | ||
| Electrical Characteristics@Tj=25 (unless otherwise specified) | ||||||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250uA | 20 | - | - | V |
| Drain-Source On-State Resistance | RDS(on) | VGS = 1.8V, ID = 4.0A | 31 | 57 | m | |
| Drain-Source On-State Resistance | RDS(on) | VGS = 2.5V, ID = 4.5A | 24 | 47 | m | |
| Drain-Source On-State Resistance | RDS(on) | VGS = 4.5V, ID = 5A | 21 | 41 | m | |
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID = 250uA | 0.4 | 0.6 | 1 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V | 1 | uA | ||
| Gate Body Leakage | IGSS | VGS = +8V, VDS = 0V | 100 | nA | ||
| Gate Resistance | Rg | 25 | ||||
| Forward Transconductance | gfs | VDS = 10V, ID = 5A | 40 | S | ||
| Dynamic | ||||||
| Total Gate Charge | Qg | VDD = 10V, D = 1, VGEN = 4.5V RG = 6 | 11.2 | nC | ||
| Gate-Source Charge | Qgs | 1.4 | nC | |||
| Gate-Drain Charge | Qg | 2.2 | nC | |||
| Turn-On Delay Time | td(on) | 15 | ns | |||
| Turn-On Rise Time | tr | 40 | ns | |||
| Turn-Off Delay Time | td(off) | 48 | ns | |||
| Turn-Off Fall Time | tf | 31 | ns | |||
| Input Capacitance | Ciss | VDS = 10V, ID = 5A VGS = 4.5V | 500 | pF | ||
| Output Capacitance | Coss | 300 | pF | |||
| Reverse Transfer Capacitance | Crss | 140 | pF | |||
| Source-Drain Diode | ||||||
| Max. Diode Forward Current | IS | 1.7 | A | |||
| Diode Forward Voltage | VSD | IS = 1.7A, VGS = 0V | 1.2 | V | ||
| Ordering Information | ||||||
| Model | ||||||
| LN2312LT1G | ||||||
| S-LN2312LT1G | Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. | |||||
| LN2312LT3G | ||||||
| S-LN2312LT3G | Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. | |||||
| Device Marking | ||||||
| LN2312LT1G | N12 | |||||
| LN2312LT3G | N12 | |||||
| Shipping | ||||||
| 3000/Tape&Reel | ||||||
| 10000/Tape&Reel | ||||||
Notes:
- 1. Pulse width limited by Max. junction temperature.
- 2. Pulse width <300us , duty cycle <2%.
- 3. Surface mounted on 1 in copper PCB board.
1809291621_LRC-LN2312LT1G_C91165.pdf
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