MS170N25HGF4 N Channel MOSFET Featuring Fast Intrinsic Diode and High Power Dissipation Capability
Key Attributes
Model Number:
MS170N25HGF4
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
170A
Operating Temperature -:
-55℃~+150℃
RDS(on):
19.5mΩ@10V,35A
Number:
1 N-channel
Input Capacitance(Ciss):
23nF@25V
Pd - Power Dissipation:
860W
Gate Charge(Qg):
360nC@125V
Mfr. Part #:
MS170N25HGF4
Package:
SOT-227
Product Description
Product Overview
The MS170N25HGF4 H1.01 by Maspower is an N-Channel MOSFET featuring low RDS(on) and high current handling capability. It includes a fast intrinsic diode and is avalanche rated, making it suitable for demanding power applications such as DC-DC converters, UPS systems, AC motor drives, battery chargers, and various switched-mode and resonant-mode power supplies.
Product Attributes
- Brand: Maspower
- Model: MS170N25HGF4 H1.01
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Type | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 250 | V | |||
| Drain Current - continuous | ID | 170 | A | |||
| Drain Current - pulse* | IDM | 500 | A | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Single Pulsed Avalanche Energy | EAS | 5 | J | |||
| Power Dissipation | PD | 860 | W | |||
| Operating and Storage Temperature Range | Tj,TSTG | -55~+150 | ||||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=3mA,VGS=0V | 250 | - | - | V |
| Drain cut-off current | IDSS | VDS=40V,VGS=0V Tj=25 | - | - | 50 | μA |
| Gate-body leakage current,forward | IGSSF | VDS=0V,VGS=20V | - | - | 200 | nA |
| Gate-body leakage current,reverse | IGSSR | VDS=0V,VGS=-20V | - | - | -200 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=35A | - | 19.5 | - | mΩ |
| Forward transconductance | Gfs | VDS=20V,ID=60A | - | 140 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | - | 23 | - | nF |
| Output capacitance | Coss | - | 2000 | - | pF | |
| Reverse transfer capacitance | Crss | - | 45 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=125V,ID=90A Rg=1Ω | - | 33 | - | ns |
| Turn-On rise time | tr | - | 50 | - | ns | |
| Turn-Off delay time | Td(off) | - | 93 | - | ns | |
| Turn-Off Fall time | tf | - | 22 | - | ns | |
| Total Gate Charge | ||||||
| Qg | VDS=125V, ID=90A, VGS=10V | - | 360 | - | nC | |
| Qgs | - | 135 | - | nC | ||
| Qgd | - | 63 | - | nC | ||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=100A, (note1) | - | - | 1.2 | V |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | 170 | - | A | |
| Reverse recovery time | trr | IF=90A dIF/dt=100A/us VR=75V | - | 200 | - | ns |
| Reverse recovery charge | Qrr | - | 750 | - | nC | |
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RθJC | 0.145 | ℃/W | |||
Note: 1. Pulse test, t ≤300μs, duty cycle, d ≤2%.
2411220310_MASPOWER-MS170N25HGF4_C7424112.pdf
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