Thermal Management MCC MCAC75N02 TP N Channel MOSFET with RoHS Compliance and Halogen Free Construction
Key Attributes
Model Number:
MCAC75N02-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
75A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.8mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
330pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
2.386nF@10V
Pd - Power Dissipation:
35W
Gate Charge(Qg):
-
Mfr. Part #:
MCAC75N02-TP
Package:
DFN-8(5.7x5.1)
Product Description
Product Overview
The MCAC75N02 is an N-Channel MOSFET featuring an advanced Trench Cell Design, offering low thermal resistance and a halogen-free construction. This component is RoHS compliant and designed for operation within a wide temperature range of -55C to +150C. Its robust design includes a UL 94 V-0 flammability rating for its epoxy encapsulation. The device is suitable for various applications requiring reliable power switching and efficient thermal management.
Product Attributes
- Brand: MCC (Micro Commercial Components)
- Model: MCAC75N02
- Channel Type: N-Channel
- Flammability Rating: UL 94 V-0
- Compliance: Halogen Free, Lead Free Finish/RoHS Compliant
- Package Type: DFN5060
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current | ID | TC=25°C | 75 | A | ||
| Pulsed Drain Current | IDM | (2,3) | 160 | A | ||
| Total Power Dissipation | PD | (1) | 80 | W | ||
| Single Pulsed Avalanche Energy | EAS | (4) | 160 | mJ | ||
| Operating Junction Temperature Range | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance Junction to Case | RθJC | (1) | 3.5 | °C/W | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250µA | 20 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS=±10V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=16V, VGS=0V | 1 | µA | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250µA | 0.3 | 1 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=20A | 4 | 4.8 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | VGS=2.5V, ID=10A | 5.3 | 6.8 | mΩ | |
| Continuous Body Diode Current | IS | 75 | A | |||
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | 1.3 | V | ||
| Dynamic Characteristics | ||||||
| Reverse Recovery Time | trr | IS=20A, di/dt=100A/µs | 32 | ns | ||
| Reverse Recovery Charge | Qrr | 24 | nC | |||
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1MHz | 2386 | pF | ||
| Output Capacitance | Coss | 372 | pF | |||
| Reverse Transfer Capacitance | Crss | 330 | pF | |||
| Total Gate Charge | Qg | VDS=10V, VGS=4.5V, ID=20A | 33 | nC | ||
| Gate-Source Charge | Qgs | 5.9 | nC | |||
| Gate-Drain Charge | Qg d | 11 | nC | |||
| Turn-On Delay Time | td(on) | VDS=10V, VGEN=4.5V, RG=4.5Ω, RL=0.5Ω, IDS=20A | 10.9 | ns | ||
| Turn-On Rise Time | tr | 87 | ns | |||
| Turn-Off Delay Time | td(off) | 82 | ns | |||
| Turn-Off Fall Time | tf | 55 | ns | |||
2008182105_MCC-MCAC75N02-TP_C725265.pdf
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